Thermal conductivity of doped PbTe-based solid solutions with off-center impurities

The coefficients of thermopower and electrical and thermal conductivity in the PbTe_0.8Se_0.1 S _0.1 solid solution with electron concentration (4.6–54) × 10¹⁸ cm^?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb_1?x Sn_xTe_1?x Se_x alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L₀ numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L₀ = 0.75 is obtained for a lightly doped sample at ～130 K.     

A left-handed composite medium based on waveguiding structures with a bianisotropic filling

A new composite medium based on waveguiding structures loaded with bianisotropic gratings of planar double split rings (PDSRs) and planar helices is considered. The microwave transmission spectra of this medium are studied experimentally. The effective parameters of the medium are determined theoretically, and its passbands are investigated. The characteristics of the medium are compared to those of infinite homogeneous bianisotropic media. A relationship between the spectral transmission characteristics and the type of resonance excitation is established. The transparency bands and overforbidden bands of the composite medium are revealed. The combinations of the medium’s effective parameters that correspond to these bands are determined. It is shown that the transparency bands where the medium is characterized simultaneously by negative permittivity and negative permeability can be identified.     

Electrical and photoelectric properties of electrochemically fabricated SnO2/Cd0.4Zn0.6S/CdTe solar cells

Solar cells based on SnO₂/Cd_0.4Zn_0.6S/CdTe heterostructures are fabricated by electrochemical deposition, and the dependences of their electrical and photoelectric properties on the thermal annealing conditions are studied. It is shown that thermal annealing reduces the tunnel currents by almost two orders of magnitude. The best conditions of thermal annealing are determined (t = 300°C and τ = 9 min). These conditions provide the highest photosensitivity of the heterostructures under study (I _sc ≈ 21.2 mA/cm², U _oc ≈ 813 mV, and η = 14.7%).     

Towards intelligent dressing

The aim of this article is to state the principles of an intelligent monitoring and control system for the grinding machine, comprising the dressing process as well as grinding stability.     

Equivalent electrical network of the DNA molecule

The variation of current density with bias or temperature is examined for DNA molecules of different configuration. To this end, the DNA molecule is represented as an equivalent electrical network whose behavior is then simulated with PSPICE. The results are found to be in close agreement with ones obtained within a physical model. It is established that the electrical response of a DNA molecule to an applied electric field depends on the boundary conditions and the potential profile along the molecule. This finding should contribute to the creation of a complete library of DNA-molecule configurations with prescribed electrical properties.     

Self-oscillating dimmable electronic ballast

This paper presents a simple alternative for an electronic ballast operating in self-sustained oscillating mode with dimming capability for fluorescent lamps. A simple modification in one of the gate drivers side circuit allows the lamp to dim without compromising the simplicity, reliability, and low cost which characterize the self-oscillating electronic ballast (SOEB). A qualitative analysis is presented to explain the behavior of the proposed self-oscillating electronic ballast with dimming feature. In addition, the stability and the key equations for the design are derived using the extended Nyquist criterion and describing function method. Experimental results from two 40-W electronic ballasts are presented to demonstrate the performance and to validate the analysis carried out.     

NANODEV: A Nanoelectronic-Device Simulation Software System

The concept and structure of the NANODEV simulation software are described. NANODEV deals with nanoelectronic devices that exploit single-electron tunneling, resonant tunneling, or quantum interference. It can use both simplified and sophisticated models and enables one to evaluate a wide variety of devices and configurations. The capabilities of NANODEV are illustrated by examples.     

Robust dual-quantisation multibit sigma-delta modulator

A new dual-quantisation sigma-delta modulator is proposed, which introduces an additional feedback path in the input of the second integrator. In this way, unlike other dual-quantisation architectures, larger signal-to-noise ratios can be obtained by means of aggressive noise-shaping, like in a conventional multibit modulator. The proposed modulator is also shown to be more robust against non-idealities than other dual-quantisation architectures.     

RF microelectronics for W-CDMA mobile communication systems

Third generation (3G) mobile communication systems are now just starting to be introduced. With a maximum data rate of 2 Mbit/s they will make wireless access to broadband data services like the Internet or video applications feasible. Most of the different physical layer technologies summarised under the acronym 3G are based on wideband-CDMA (W-CDMA), in contrast to existing second generation systems, which mostly use TDMA and FDMA. This has severe consequences for the design of the transceiver front-ends. During standardisation these were assumed to have an adequate RF performance yet they still present a performance bottleneck for the system. Starting with a short introduction to UMTS (Universal Mobile Telecommunications System)-the 3G standard to be deployed in Europe and already operating in Japan-this paper describes by way of example some of the test cases specified for UMTS and their impact on the analogue front-end. It is shown that accurate simulation of all the analogue and digital signal processing is necessary in order to predict the RF performance needed of today's commercial RFICs. The paper then presents and reviews some actual design examples. Finally, possible technologies and techniques for application in future mobile terminals are discussed     

Scattering from and penetration into a dielectric-filled conductingcylinder with multiple apertures

The theory of characteristic modes for aperture problems is used in this paper to solve the equivalent magnetic current and aperture fields due to a conducting cylinder with multiple slots. It is assumed that these slots are illuminated by either a transverse electric (TE) or a transverse magnetic (TM) plane wave and the media inside and outside the cylinder exhibit different electromagnetic properties. The formulation is given for the general case and numerical results for a limited number of slots are presented