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261.
José Trashorras 《Comptes Rendus Mathematique》2003,336(1):69-74
We improve the Large Deviations Principle satisfied by a Coarse Grained process already analyzed by Boucher, Ellis and Turkington [Ann. Probab. 27 (1999) 297–324]. To cite this article: J. Trashorras, C. R. Acad. Sci. Paris, Ser. I 336 (2003). 相似文献
262.
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This paper introduces a new single-phase high power factor rectifier, which features regulation by conventional PWM, soft commutation and instantaneous average line current control. Furthermore, thanks to the use of a single converter, instead of the conventional configuration composed of a four-diode front-end rectifier followed by a boost converter, a significant reduction in the conduction losses is achieved. A prototype rated at 1.6 kW, operating at 70 kHz, with an input AC voltage of 220 Vrms and an output voltage of 400 VDC has been implemented in the laboratory. An efficiency of 97.8 % at 1.6 kW has been measured. Analysis, design, and the control circuitry are also presented in the paper 相似文献
265.
266.
M.R.X. de Barros G. Nykolak D.J. DiGiovanni A. Bruce W.H. Grodkiewicz P.C. Becker 《Photonics Technology Letters, IEEE》1996,8(6):761-763
We report the gain, noise figure, output saturation power, and conversion efficiency of a highly concentrated Er/sup 3+/-doped alumino silicate fiber amplifier. We obtain a gain per unit length of 1.0 dB/cm, which corresponds to the highest gain per unit length obtained in an Er/sup 3+/-doped fiber amplifier. The pump power threshold ranges from 2 to 5 mW, depending on the fiber length. 相似文献
267.
Johnson R.A. de la Houssaye P.R. Chang C.E. Pin-Fan Chen Wood M.E. Garcia G.A. Lagnado I. Asbeck P.M. 《Electron Devices, IEEE Transactions on》1998,45(5):1047-1054
This paper reviews the prospects of thin-film silicon-on-sapphire (TFSOS) CMOS technology in microwave applications in the 1-5 GHz regime and beyond and presents the first demonstration of microwave integrated circuits based on this technology, MOSFET's optimized for microwave use, with 0.5-μm optically defined gate lengths and a T-gate structure, have ft values of 25 GHz (14 GHz) and fmax values of 66 GHz (41 GHz) for n-channel (p-channel) devices and have noise figure values below 1 db at 2 GHz, some of the best reported performance characteristics of any silicon-based MOSFET's to date. On-chip spiral inductors exhibit quality factors above ten. Circuit performance compares favorably with that of other CMOS-based technologies and approach performance levels similar to those obtained by silicon bipolar technologies. The results demonstrate the significant potential of this technology for microwave applications 相似文献
268.
A Kind of direct methods is presented for the solution of optimal control problems with state constraints.These methods are sequential quadratic programming methods.At every iteration a quadratic programming which is obtained by quadratic approximation to Lagrangian function and Linear approximations to constraints is solved to get a search direction for a merit function.The merit function is formulated by augmenting the Lagrangian funetion with a penalty term.A line search is carried out along the search direction to determine a step length such that the merit function is decreased.The methods presented in this paper include continuous sequential quadratic programming methods and discreate sequential quadrade programming methods. 相似文献
269.
270.
We focus on continuous Markov chains as a model to describe the evolution of credit ratings. In this work it is checked whether a simple, tridiagonal type of generator provides a good approximation to a general one. Three different tridiagonal approximations are proposed and their performance is checked against two generators, corresponding to a volatile and a stable period, respectively. Copyright © 2007 John Wiley & Sons, Ltd. 相似文献