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21.
Approaches to using visual language in a cultural context can be placed on a continuum, with global (universal) on one end and culture-focused on the other. Each approach reveals contrasting assumptions about three central design issues: perception, aesthetics and pragmatics. The global approach is characterized by attempts to invent an objective, universal visual language or to define such a language through perceptual principles and empirical research. The culture-focused perspective is founded on the principle that visual communication is intimately bound to experience and hence can function only within a given cultural context, to which designers must be sensitive. While the modernist, universal approach has been losing ground to the postmodern, culture-focused approach, the two complement each other in a variety of ways and, depending on the rhetorical situation, offer pragmatic benefits and drawbacks 相似文献
22.
A fiber optic ring network, such as fiber distributed data interface (FDDI), can be operated over multiple wavelengths on its existing fiber plant consisting of point-to-point fiber links. Using wavelength division multiplexing (WDM) technology, FDDI nodes can be partitioned to operate over multiple subnetworks, with each subnetwork operating independently on a different wavelength, and inter-subnetwork traffic forwarding performed by a bridge. For this multiwavelength version of FDDI, which we refer to as wavelength distributed data interface (WDDI), we examine the necessary upgrades to the architecture of a FDDI node, including its possibility to serve as a bridge. The main motivation behind this study is that, as network traffic scales beyond (the single-wavelength) FDDI's information-carrying capacity, its multiwavelength version, WDDI, can gracefully accommodate such traffic growth. A number of design choices exist in constructing a good WDDI network. Specifically, we investigate algorithms using which, based on prevailing traffic conditions, partitioning of nodes into subnetworks can be performed in an optimized fashion. Our algorithms partition the nodes into subrings, such that the total traffic flow in the network and/or the network-wide average packet delay is minimized 相似文献
23.
Many current implementations of protocols such as the Transmission Control Protocol/Internet Protocol (TCP/IP) are inefficient because data are often accessed more frequently than necessary. Three techniques that reduce the need for memory bandwidth are proposed. The techniques are copy-on-write, page remapping, and single-copy. Afterburner, a network-independent card that provides the services that are necessary for a single-copy protocol stack, is described. The card has 1 MByte of local buffers and provides a simple interface to a variety of network link adapters, including HIPPI and asynchronous transfer mode (ATM). Afterburner can support transfers to and from the link adapter card at rates up to 1 Gbit/s. An implementation of TCP/IP that uses the features provided by Afterburner to reduce the movement of data to a single copy is discussed. Measurements of the end-to-end performance of Afterburner and the single-copy implementation of TCP/IP are presented 相似文献
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25.
Fractal error for detecting man-made features in aerial images 总被引:3,自引:0,他引:3
A technique is proposed for aiding photointerpreters in detecting man-made features in aerial reconnaissance images. The technique, which uses a metric called fractal error, is based on the observed propensity of natural image features to fit a fractional Brownian motion model. Man-made features usually do not fit this model well, and consequently the fractal error metric may be used as a discriminant function for detecting man-made scene features 相似文献
26.
This paper analyzes probability of bit-error (Pe) performance of asynchronous bandlimited direct-sequence code-division multiple-access systems with binary phase-shift keying spreading. The two present methods of Pe analysis under bandwidth-efficient pulse shaping: the often-cited standard Gaussian approximation and the characteristic function (CF) method suffer from either a low accuracy in regions of low Pe (< 10-3) or a prohibitively large computational complexity. The paper presents an alternate method of Pe analysis with moderate computational complexity and high accuracy based on a key observation. A sequence of chip decision statistics (whose sum yields a bit statistic) forms a stationary, m-dependent sequence when conditioned on the chip delay and phase offset of each interfering signal. This observation permits the generalization of the improved Gaussian approximation previously derived for the rectangular pulse and the derivation of a numerically efficient approximation based on the CF method. Numerical examples of systems using the square-root raised-cosine and IS-95 pulses illustrate THE P e performance, user capacity and the accuracy of the proposed method 相似文献
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Compensated SC integrator stages are analysed and compared with respect to their sensitivities to finite amplifier gain effects. Simple single-stage amplifiers may be used in such circuits even in highly selective filtering applications. This may allow an extension of the present frequency range of SC circuits. 相似文献
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Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献