Influence of device engineering on the analog and RF performances of SOI MOSFETs

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).     

Synchronous Full-Scan for Asynchronous Handshake Circuits

Handshake circuits form a special class of asynchronous circuits that has enabled the industrial exploitation of the asynchronous potential such as low power, low electromagnetic emission, and increased cryptographic security. In this paper we present a test solution for handshake circuits that brings synchronous test-quality to asynchronous circuits. We add a synchronous mode of operation to handshake circuits that allows full controllability and observability during test. This technique is demonstrated on some industrial examples and gives over 99% stuck-at fault coverage, using test-pattern generators developed for synchronous circuits. The paper describes how such a full-scan mode can be achieved, including an approach to minimize the number of dummy latches in case latches are used in the data path of the handshake circuit.     

A 3.3-mW /spl Sigma//spl Delta/ modulator for UMTS in 0.18-/spl mu/m CMOS with 70-dB dynamic range in 2-MHz bandwidth

A quadrature fourth-order, continuous-time, /spl Sigma//spl Delta/ modulator with 1.5-b quantizer and feedback digital-to-analog converter (DAC) for a universal mobile telecommunication system (UMTS) receiver chain is presented. It achieves a dynamic range of 70 dB in a 2-MHz bandwidth and the total harmonic distortion is -74 dB at full-scale input. When used in an integrated receiver for UMTS, the dynamic range of the modulator substantially reduces the need for analog automatic gain control and its tolerance of large out-of-band interference also permits the use of only first-order prefiltering. An IC including an I and Q /spl Sigma//spl Delta/ modulator, phase-locked loop, oscillator, and bandgap dissipates 11.5 mW at 1.8 V. The active area is 0.41 mm/sup 2/ in a 0.18-/spl mu/m 1-poly 5-metal CMOS technology.     

State of and prospects for XeF(C−A) optically pumped lasers

Experimental and theoretical results are presented on an XeF(C?A) blue-green laser driven by 5-kJ energy. The laser was pumped by a ferrite-induced discharge of 90 cm in length. The output energy of 0.22 J was obtained with a plane-parallel resonator. A program to simulate laser operation has been developed. Numerical results for a wide range of conditions are compared with experiments performed by us and by other authors. It is found that intracavity refractive losses limit laser operation for XeF pressures above 3 torr. The laser efficiency strongly depends on the discharge-to-cavity length ratio. Possible ways to increase the laser power and efficiency are discussed.     

An investigation of the Al2O3-CdSe interface in accumulation

The Al₂O₃−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation. The surface states are, most likely, located in the insulator Al₂O₃ with a concentration varying from 4·10¹⁸ to 10¹⁹ cm⁻³ eV⁻¹. The surface states have a negligible influence on the thin-film transistor operation.     

Efficient QoS support in a slotted multihop WDM metro ring

A novel distributed access protocol for a slotted wavelength-division-multiplexing (WDM) metro ring employing all-optical packet switching and supporting quality-of-service (QoS) classes is presented and analyzed. Since we assume that there are more nodes than available wavelengths in the network, we obtain a scalable multihop WDM ring as underlying network architecture. By dividing each channel into several time slots and further applying destination release and slot reuse, data packets can be efficiently transmitted and received in a statistically multiplexed manner. In our architecture, each node is equipped with one tunable transmitter and one fixed-tuned receiver. Furthermore, as we generally consider so-called a posteriori access strategies, different packet selection schemes are proposed and compared. An analytical model based on the semi-Markov process methodology is developed to quantify the performance of one of these schemes. As a key element of the protocol, an efficient QoS support access mechanism is proposed and its performance is evaluated. The new QoS control scheme adopts a frame-based slot reservation strategy including connection setup and termination, which only slightly increases the signaling and node processing overhead. Thus, an efficient hybrid protocol combining connectionless and connection-oriented packet transmissions is proposed     

Sharp estimates in terms of moduli of smoothness for compound cubature rules

Summary In 1980 Dahmen-DeVore-Scherer introduced a modulus of continuity which turns out to reflect invariance properties of compound cubature rules effectively. Accordingly, sharp error bounds are derived, the existence of relevant counterexamples being a consequence of a quantitative resonance principle, established previously.