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181.
This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology  相似文献   
182.
To specify manufacturing tolerances of a reflector antenna, various errors such as random surface errors and misalignment errors must be considered at one time because superposition of the effects of those errors may not hold. Based on the Rahmat-Samii's formulation (1983), a method for computing efficiently the average power pattern of a reflector antenna with those errors is presented. Simulation results show that superposition of the effects of errors does not generally hold and demonstrate how those errors degrade the peak-gain and sidelobe levels  相似文献   
183.
A local interconnection technology utilizing polysilicon strapped with selective-chemical-vapor-deposited (CVD) tungsten has been developed. Both n- and p-channel MOS transistors have been successfully fabricated using this technology. Tungsten deposited on polysilicon is an attractive gate shunt and local interconnection material because of its low resistivity, immunity to dopant segregation and diffusion, and resistance to electromigration. A potential problem of this technology is the excessive diode leakage current associated with strapping shallow source/drain diodes with tungsten. The leakage is attributed to defects induced by the heavy source/drain implant, which can be effectively eliminated with a proper annealing procedure  相似文献   
184.
In this paper, we propose queueing strategies employing the service interval-based priority (sip) which can provide delay-bounded, and loss-free services, while maximizing bandwidth utilization in the atm network. We also describe a variation of the sip, the residual service interval-based priority (rsip) which can achieve almost full utilization by assigning priorities dynamically on the basis of the residual service interval. We store the realtime cells belonging to different connections in logically separated queues, and for each queue, we set a parameter called service interval, during which only one cell is allowed to be transmitted. The sip server takes and transmits the head-of-line (hol) cell of the queue which has the smallest service interval, while the rsip server selects the queue with the smallest residual service interval. When there is no eligible real-time cell, it transmits non-real-time cell, thus enabling a maximized bandwidth utilization. Employing the above queueing strategies, we analyze the delay characteristics deterministically with the leaky bucket bounded input traffic and then dimension the optimal service interval. In dimensioning the service interval and buffer space of each real-time service queue, we consider burstiness of traffic in conjunction with delay constraints, so that bandwidth utilization can get maximized. In addition, we consider the issues of protection from malicious users, average bandwidth utilization, and coupling between the delay bound and the bandwidth allocation granularity.  相似文献   
185.
An exact analytic solution of a plane electromagnetic (EM) wave scattered by an eccentric multilayered sphere (EMS) is obtained. It is assumed that the layers are perfect dielectrics and that the innermost core is a perfectly conducting sphere. Each center of a layer is translated along the incident axis. All fields are expanded in terms of the spherical vector wave functions with unknown expansion coefficients. The addition theorem for spherical wave functions is used prior to applying the boundary conditions. The unknown coefficients are determined by solving a system of linear equations derived from the boundary conditions. Numerical results of the scattering cross sections are presented on the plane of φ=0 degrees and φ=90 degrees. The convergence of modal solutions and the characteristics of patterns are examined with various geometries and permittivity distributions  相似文献   
186.
This paper discusses recent advances in the theory and applications of scrambling techniques for digital lightwave transmission. It introduces the theories of sequence space and shift register generator (SRG) space which enable systematic analysis and mathematical manipulation of the behavior of sequences in general and the related SRG's. It discusses the behavior and realization of frame synchronous scrambling (FSS) and distributed sample scrambling (DSS) with emphasis on parallel sequences and the related parallel SRG's (PSRG). In addition, it describes self synchronous scrambling (SSS). Then the paper applies the theories to today's lightwave transmission systems by demonstrating practical parallel designs of FSS for SDH/SONET transmission, DSS for cell-based ATM transmission, and SSS for SDH-based ATM transmission. It finally considers how DSS can be used for scrambling of mixed isochronous and nonisochronous data in future high-speed data networks. The paper employs various new concepts and terminology, such as PSRG engine, generating vector discrimination matrix, (M,N) PSRG, sampling vector, correction vector, correction matrix, predictable scrambling concurrent sampling, and immediate correction  相似文献   
187.
High performance enhancement mode InP MISFET's have been successfully fabricated by using the sulfide passivation for lower interface states and with photo-CVD grown P3N5 film used as gate insulator. The MISFET's thus fabricated exhibited exhibited pinch-off behavior with essentially no hysteresis. Furthermore the device showed a superior stability of drain current. Specifically under the gate bias of 2 V for 104 seconds the room temperature drain current was shown to reduce from the initial value merely by 2.9% at the drain voltage of 4 V. The effective electron mobility and extrinsic transconductance are found to be about 2300 cm 2/V·s and 2.7 mS/mm, respectively. The capacitance-voltage characteristics of the sulfide passivated InP MIS diodes show little hysteresis and the minimum density of interface trap states as low as 2.6×1014/cm2 eV has been attained  相似文献   
188.
A simple amplitude shift keying (ASK) optical link is demonstrated by using a low-cost self-pulsating laser diode and an envelope detector for a low-cost broadband local area network. A link sensitivity of -22 dBm was achieved at 200 Mbit/s. Because the self-pulsation frequency can be tuned by the bias current, frequency division multiplexing can be simply implemented for multiuser applications  相似文献   
189.
Several distributed power control algorithms that can achieve carrier-to-interference ratio (CIR) balancing with probability one have been proposed previously for cellular mobile systems. In these algorithms, only local information is used to adjust transmitting power. However, a normalization procedure is required in each iteration to determine transmitting power and, thus, these algorithms are not fully distributed. In this paper, we present a distributed power control algorithm which does not need the normalization procedure. We show that the proposed algorithm can achieve CIR balancing with probability one. Moreover, numerical results reveal our proposed scheme performs better than the algorithm presented in Grandhi et al. [1994]. The excellent performance and the fully distributed property make our proposed algorithm a good choice for cellular mobile systems  相似文献   
190.
A new ultra-wideband, low-loss and small-size coplanar waveguide (CPW) to coplanar strip (CPS) transition which can be used from DC to 110 GHz is presented. The proposed transition connects CPW with CPS by the reformed air-bridge. Two ground planes of CPW are tied at their ends by a line and the centre of the line is connected to the ground strip of CPS by another line. Owing to the symmetry of the proposed structure, the currents of two ground planes of CPW are combined with the same phase and transferred to the ground strip of CPS. With height of 3 μm, the signal line of CPW passes over two connecting lines and is connected to the signal strip of CPS. For the back-to-back transition structure, insertion loss <1 dB and return loss >15 dB are obtained from 0.5 to 110 GHz  相似文献   
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