Localization or tunneling in asymmetric double-well potentials

An asymmetric double-well potential is considered, assuming that the wells are parabolic around the minima. The WKB wave function of a given energy is constructed inside the barrier between the wells. By matching the WKB function to the exact wave functions of the parabolic wells on both sides of the barrier, for two almost degenerate states, we find a quantization condition for the energy levels which reproduces the known energy splitting formula between the two states. For the other low-lying non-degenerate states, we show that the eigenfunction should be primarily localized in one of the wells with negligible magnitude in the other. Using Dekker’s method (Dekker, 1987), the present analysis generalizes earlier results for weakly biased double-well potentials to systems with arbitrary asymmetry.     

Molecules relevant for organic photovoltaics: a range-separated density functional study

Accurate determination of both fundamental and optical gap is necessary for designing molecules relevant for organic photovoltaics. Here, we study how range-separated density functionals reproduce frontier orbital energies, HOMO (highest occupied molecular orbital)–LUMO (lowest unoccupied molecular orbital) gaps, and optical gaps for molecules relevant for organic photovoltaics. In this study, we consider 12 different range-separated density functional for computing HOMO energy, HOMO–LUMO gap, and optical gap which are compared with available experimental and reported GW values. We found that the reproduction of desired photovoltaic properties primarily depend on range separation parameter. Moreover, the tested functionals are comparable with OT-BNL functional.     

Black phosphorus saturable absorber for ultrafast mode‐locked pulse laser via evanescent field interaction

Black phosphorus, or BP, has found a lot of applications in recent years including photonics. The most recent studies have shown that the material has an excellent optical nonlinearity useful in many areas, one of which is in saturable absorption for passive mode‐locking. A direct interaction scheme for mode‐locking, however, has a potential to optically cause permanent damage to the already delicate material. Evanescent field interaction scheme has already been proven to be a useful method to prevent such danger for other 2‐dimensional nanomaterials. In this report, we have utilized the evanescent field interaction to demonstrate that the optical nonlinear characteristics of BP is sufficiently strong to use in such an indirect interaction method. The successful demonstration of the passive mode‐locking operation has generated pulses with the pulse duration, repetition rate, and time bandwidth product of 2.18 ps, 15.59 MHz, and 0.336, respectively.     

Community Discovery with Location-Interaction Disparity in Mobile Social Networks

With the fast?growth of mobile social network, people ’s inter?actions are frequently marked with location information, such as longitude and latitude of visited base station. This boom of data has led...     

High-speed low-power voltage-programmed driving scheme for AMOLED displays

A new voltage-programmed driving scheme named the mixed parallel addressing scheme is presented for AMOLED displays, in which one compensation interval can be divided into the first compensation frame and the consequent N-1 post-compensation frames without periods of initialization and threshold voltage detection. The proposed driving scheme has the advantages of both high speed and low driving power due to the mixture of the pipeline technology and the threshold voltage one-time detection technology. Corresponding to the proposed driving scheme, we also propose a new voltage-programmed compensation pixel circuit, which consists of five TFTs and two capacitors(5T2C). In-Zn-O thin-film transistors(IZO TFTs) are used to build the proposed 5T2C pixel circuit. It is shown that the non-uniformity of the proposed pixel circuit is considerably reduced compared with that of the conventional 2T1C pixel circuit. The number of frames(N) preserved in the proposed driving scheme are measured and can be up to 35 with the variation of the OLED current remaining in an acceptable range. Moreover, the proposed voltage-programmed driving scheme can be more valuable for an AMOLED display with high resolution, and may also be applied to other compensation pixel circuits.     

校企合作模式实践研究

校企合作是高职专业教育发展的基础。只有让企业走进高职院校,让学生与教师走进企业,才能实现共同获利。让高职教学质量提高,学生轻松就业,企业拥有优秀的人才。但是校企合作不能表面化。高职院校要真正实现校企合作,要为企业展现合作将给企业带来的效益。要进行看得见摸得着的,切实可行的合作方案。本文主要就如何实现校企之间的合作,把校企合作落实到实处进行了研究。     

端面反射率对单端反射半导体光放大器的影响

本文考虑了光子密度、增益谱色散、放大自发辐射噪声(ASE)、端面反射率和载流子浓度对折射率的影响,并采用细化分段法及四阶龙格-库塔法求解速率方程及光场传输方程,分析了不同端面反射率时单端反射半导体光放大器(RSOA)的动态特性。结果表明端面反射率的适当增加,可以使增益得到提高,增益恢复时间减少, ASE输出功率增加,消光比下降。理论分析为优化RSOA的动态特性具有一定的指导意义。     

热循环加载条件下焊点形态参数对板级光互连模块对准偏移影响分析

建立光互连模块有限元分析模型并进行热循环加载有限元分析,获取了垂直腔面发射激光器(Vertical Cavity Surface Emitting Laser,VCSEL)与耦合元件间的位置偏移;采用正交实验设计法设计了不同焊点结构参数组合并建立有限元模型,计算相应焊点形态参数组合下的位置偏移数据并进行方差分析.结果表明:在一个热循环周期内低温保温结束时刻位置偏移最大;外端光通道的位置偏移比中间光通道的偏移值大;在置信度为95%时VCSEL焊点高度对对准偏移具有显著影响,因素显著性排序由大到小依次为:VCSEL焊点高度、陶瓷基板焊点高度、VCSEL焊点体积和陶瓷基板焊点体积;单因子变量分析表明,位置偏移随VCSEL焊点高度增加而增大.     

电视机的虚拟开发与设计（一）--电子元器件的虚拟开发设计

本文主要应用虚拟技术对电视机进行开发,在设计和开发过程中,主要对电视机的基本结构如电视机外壳、电子元器件、连接导线和PCB等结构要素进行交互操作、场景开发和动画控制,给出了详细的开发过程和开发效果图,对于电视机的开发具有一定的借鉴作用。