High performance laser with nanopatterned active layer by selective area epitaxy

Lasers containing a nanopatterned active layer demonstrating excellent threshold characteristics are presented. The nanopatterned active layer is fabricated using high-resolution electron beam lithography and selective-area metal organic chemical vapour deposition crystal growth. Results demonstrating an order of magnitude improvement over previous results are reported.     

Self-Adapting Linear Algebra Algorithms and Software

One of the main obstacles to the efficient solution of scientific problems is the problem of tuning software, both to the available architecture and to the user problem at hand. We describe approaches for obtaining tuned high-performance kernels and for automatically choosing suitable algorithms. Specifically, we describe the generation of dense and sparse Basic Linear Algebra Subprograms (BLAS) kernels, and the selection of linear solver algorithms. However, the ideas presented here extend beyond these areas, which can be considered proof of concept.     

Vascular morphology by three-dimensional magnetic resonance imaging

A three-dimensional examination of blood vessels is provided using MR data from seven cases. The vascular surfaces are constructed with an algorithm that automatically follows the selected artery or vein and generates a projected three-dimensional gradient shaded image. Fast 3DFT pulse sequences were optimized to enhance the time-of-flight contrast of the intravascular region. By increasing the surface threshold value in a three-dimensional head study, the flesh of a patient's face was peeled away to demonstrate the superfacial temporal artery. Gated cardiac images show the great vessels and cardiac chambers. A three-dimensional view of the aorta shows an irregular surface in the vicinity of an adrenal tumor. 3D MR exams provide a non-invasive technique for assessing vascular morphology in a clinical setting.     

High-gain pseudomorphic InGaAs base ballistic hot-electron device

A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In _0.12Ga_0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In_0.12Ga_0.88As was estimated to be about 380 meV     

Untersuchungen zur Wechselwirkung von gasf?rmigem molekularem Iod mit Silberoberfl?chen mittels XPS und AES

Summary The adsorption of gaseous molecular iodine on clean silver surfaces proceeds in the first stage by dissociative chemisorption. After the formation of half a monolayer of chemisorbed iodine atoms the formation of silver iodide begins, which forms a very regular overlayer on top of the substrate. Both iodine species can be distinguished due to a difference in chemical shift of the M₄N₄, ₅N₄, ₅-Auger transitions. After completion of this overlayer further iodine uptake is slowed down significantly. Above an overlayer thickness of about 10 nm a further progress of the reaction cannot be followed anymore due to the limited information depth of XPS.     

Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)

Design and fabrication of lateral SiC reduced surface field (RESURF) MOSFETs have been investigated. The doping concentration (dose) of the RESURF and lightly doped drain regions has been optimized to reduce the electric field crowding at the drain edge or in the gate oxide by using device simulation. The optimum oxidation condition depends on the polytype: N/sub 2/O oxidation at 1300/spl deg/C seems to be suitable for 4H-SiC, and dry O/sub 2/ oxidation at 1250/spl deg/C for 6H-SiC. The average inversion-channel mobility is 22, 78, and 68 cm/sup 2//Vs for 4H-SiC(0001), (112~0), and 6H-SiC(0001) MOSFETs, respectively. RESURF MOSFETs have been fabricated on 10-/spl mu/m-thick p-type 4H-SiC(0001), (112~0), and 6H-SiC(0001) epilayers with an acceptor concentration of 1/spl times/10/sup 16/ cm/sup -3/. A 6H-SiC(0001) RESURF MOSFET with a 3-/spl mu/m channel length exhibits a high breakdown voltage of 1620 V and an on-resistance of 234 m/spl Omega//spl middot/cm/sup 2/. A 4H-SiC(112~0) RESURF MOSFET shows the characteristics of 1230 V-138 m/spl Omega//spl middot/cm/sup 2/.     

From biological inspiration toward next-generation manipulators: manipulator control focused on human tasks

This paper presents our approach to extend the niche of behavior-based robotics toward manipulation. We use results from neuroscience to derive some qualitative design rules for the mechanics of the manipulator, resulting in a next-generation manipulator, the "soft arm". By defining the basic behaviors of the manipulator as trajectory-producing behaviors (which is also biologically plausible), we have designed a first test case: writing on a board with a mobile manipulator. The soft arm has not yet been developed; therefore, we have emulated such a soft robot arm on an industrial robot.