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31.
Preface     
Journal of Statistical Physics -  相似文献   
32.
High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers.  相似文献   
33.
In this paper, we present a performance analysis of network topologies for the optical core of IP-over-WDM networks with static wavelength routing. The performance analysis is focused on regular degree four topologies, and, for comparison purposes, degree three topologies are also considered. It is shown that the increase of the nodal degree from three (degree three topology with smallest diameter) to four (degree four topology with smallest diameter) improves the network performance if a larger number of wavelengths per link is available. However, the influence of wavelength interchange on the nodal degree gain is small. The performance of regular degree four topologies with smallest diameter is also compared with the performance of mesh–torus topologies (which are also degree four topologies), and it is shown that the blocking probability of degree four topologies with smallest diameter is about two orders of magnitude lower than the blocking probability of mesh–torus topologies. It is also presented a performance comparison of WDM-based networks with nodal degrees ranging from two to five and it is shown that the increase of the nodal degree from two to three leads to high nodal degree gains, while de increase of the nodal degree from four to five leads to low nodal degree gains. These results show that degree three and degree four topologies are very attractive for use in the optical core of IP-over-WDM networks.  相似文献   
34.
Parameters of Gaussian multivariate models are often estimated using the maximum likelihood approach. In spite of its merits, this methodology is not practical when the sample size is very large, as, for example, in the case of massive georeferenced data sets. In this paper, we study the asymptotic properties of the estimators that minimize three alternatives to the likelihood function, designed to increase the computational efficiency. This is achieved by applying the information sandwich technique to expansions of the pseudo-likelihood functions as quadratic forms of independent normal random variables. Theoretical calculations are given for a first-order autoregressive time series and then extended to a two-dimensional autoregressive process on a lattice. We compare the efficiency of the three estimators to that of the maximum likelihood estimator as well as among themselves, using numerical calculations of the theoretical results and simulations.  相似文献   
35.
36.
The author discusses the concept that data sampled beyond the Nyquist frequency is meaningless. A simple signal processing scheme to extend resolution to nearly twice the Nyquist without the problem of alias emerged. It starts by placing one-dimensional signals into a simulated sample-and-hold process in a Mathcad application  相似文献   
37.
The design and operation of multiple-quantum-well (MQW) wavelength-tunable distributed Bragg reflector (DBR) InGaAs QW lasers with nonabsorbing gratings and monolithically integrated external cavity electroabsorption modulators fabricated by selective-area MOCVD are presented. Uncoated devices exhibit CW threshold currents as low as 10.5 mA with slope efficiencies of 0.21 W/A from the laser facet. Wavelength tuning of 7 nm is obtained by injection current heating of the DBR section. These devices also exhibit extinction ratios of 18 dB from the modulator facet at a low modulator bias of 1 V, when measured with a broad-area detector. When coupled to a singlemode fiber, these devices exhibited high extinction ratios of 40 dB at a modulator bias of 1.25 V.  相似文献   
38.
In parts I, II, and III combined of this paper, we define a notion of viscosity solution for these equations and existence is proved by a Perron-like method. Here, in part I, we prove useful identities, and a maximum-like principle for smooth sub(super) solutions of the standard wave equation. We define a new potential theoretic (P) notion of solution, subsolution and supersolution, and a related potential type (P) Cauchy problem for semilinear second order hyperbolic equations.  相似文献   
39.
We discuss theoretical and experimental studies on the propagation of ultrashort pulses through fiber Bragg gratings. We also consider several applications in optical communications to be found by combining ultrashort pulses and fiber Bragg gratings: a multiwavelength source for wavelength-division-multiplexed systems and a means for implementing optical code-division multiple access  相似文献   
40.
Low-temperature-grown GaAs (LT-GaAs) is a promising material for all-optical switching devices due to its outstanding optical characteristics. In this paper, we outline a simplified model we have developed to describe the dynamics of the carriers in this material. We also report the results of a series of measurements that we have performed to characterize the optical properties of the material. Specifically, we present the first measurements of the two-photon absorption coefficient and the refractive index changes as a function of the growth and annealing temperatures in LT-GaAs. Finally, we show how our model can be used to optimize the material for applications in all-optical switching  相似文献   
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