专用集成电路CAT技术的进展

本文简单地回顾了提高VLSI测试效率所采用的一些手段,讨论了在ASIC测试问题研究中出现的一些新观点、新方法、新动向,以及所取得的成果。在此基础上,文章阐明了ASIC测试技术的发展方向,并着重论述了可望在未来得到发展的,针对ASIC的功能测试方法。     

CO-laser photoacoustic detection of phosgene (COCl2)

Detection of COCl₂, a highly toxic gas in chemical industry, using laser photoacoustic spectroscopy is presented. The spectrophone system used has a broad band LN₂ cooled CW CO laser as a source of radiation, which operates from 4.8–8.4 um in the mid-infrared. Using an extracavity open longitudinal resonant cell, absorption signals to about 30 CO laser lines in the 5.45 um region could be observed. detection sensitivity has been estimated to be ppb order.This work has been supported by the NSFC     

Spectroscopic imaging display and analysis.

A system for display of magnetic resonance (MR) spectroscopic imaging (SI) data is described which provides for efficient review and analysis of the multidimensional spectroscopic and spatial data format of this technique. Features include the rapid display of spectra from selected image voxels, formation of spectroscopic images, spectral and image data processing operations, methods for correlating spectroscopic image data with high resolution 1H MR images, and hardcopy facilities. Examples are shown for 31P and 1H spectroscopic imaging studies obtained in human and rat brain.     

模糊集单调型分解定理

模糊集的分解集定理有两种形式，第一种形式与模糊集的λ—截集有关：Ａ＝其中Ａ＿λ是的λ—截集￣［１］．第二种形式与集合套有关：其中Ｈ（λ）为集合套￣［２］或者Ａ＝其中Ｈ（λ）为集合套，Ｑ为（０，１）的可列稠密子集＿［３］，．其实，这两种形式在本文提出的基本模糊集的概念下，可以统一起来成为任何模糊集可以分解为一些（可数或不可数）基本模糊集的和。不仅如此，本文还提出简单模糊集的概念，并证明了任何模糊集都可以表示成为可数个单调上升的简单模糊集的和，或等价地，可以表示成可数个单调上升的简单模糊集的极限，所用的证明方法是构造性的，所以对模糊集的结构也得出了一个清晰的认识．     

Band offsets of In0.30Ga0.70As/In0.29Al0.71As heterojunction grown on GaAs substrate

Temperature-dependent current-voltage measurement was employed to study the band offsets of the In_0.30Ga_0.70As/In _0.29Al_0.71As heterojunction. The conduction band discontinuity was determined to be 0.71±0.05 eV which corresponds to a conduction band offset to bandgap difference ratio ~0.66. The comparison between experimental and theoretical results is presented     

叶绿素衍生物─CPD_4在人血清中的激发和发射荧光谱

叶绿素衍生物４号（ＣＰＤ４）是一种新型中药光敏剂，本文研究了不同浓度的ＣＰＤ４分别在含１０％不同血型人血清的生理盐水中以及纯生理盐水中的激发和发射荧光光谱，并对结果进行了分析，结论对ＣＰＤ４在光动力诊断恶性肿瘤的临床应用具有一定的指导意义．     

GaAs亚微米自对准工艺技术研究

总结了在５０ｍｍＧａＡｓ圆片上实现自对准介质膜隔离等平面工艺技术的研究，着重描述了离子注入、自对准亚微米难熔栅制备、钝化介质膜生长、干法刻蚀、电阻和电容制备等关键工艺的研究结果。这套工艺的均匀性、重复性好，在５０ｍｍＧａＡｓ圆片上获得了满意的成品率。采用这套工艺已成功地研制出多种性能良好的ＧａＡｓＩＣ和ＧａＡｓ功率ＭＥＳＦＥＴ，证明国家自然科学基金委员会这一重大课题的选择对发展我国ＧａＡｓＩＣ确实具有重大意义。     

温度调谐LBO晶体光参量振荡器

本文详细研究０．５３２μｍ激光泵浦、温度调谐Ⅱ型非临界相位匹配ＬＢＯ光参量振荡器。当温度从２０℃升高到２００℃时，其信号波和闲置波的调谐范围分别为１．００２～０．８９８μｍ和１．１３４～１．３０６μｍ。本装置最吸引人之处是本征输出线宽比Ⅰ型情形小一个量级。     

双波长Nd：YAG脉冲激光器的实验研究

根据多波长同时振荡条件，我们建立了大能量１０６４ｎｍ和１３１８ｎｍ同时运转的双波长脉冲Ｎｄ：ＹＡＧ激光器。得到了１０６４ｎｍ和１３１８ｎｍ的激光输出能量分别为０．５９４Ｊ和０．８６１Ｊ，效率分别为０．３１％和０．４５％。实验结果说明了该双波长激光器有较好的时间和空间重选性。     

A simple method for extracting average doping concentration in thepolysilicon and silicon surface layer near the oxide in polysilicon-gateMOS structures

The author demonstrates a simple technique that extracts average doping concentration in the polysilicon and silicon near the oxide in a metal/polysilicon/oxide/silicon system. The technique is based on the maximum-minimum capacitance method on two large area structures-one MOSFET and one MOSC (MOS capacitor). The technique is simple and reliable since only three data points in the C-V data are required-two points in MOSC C-V and one point in MOSFET C-V. The technique avoids inaccuracy caused by interface traps at the polysilicon/oxide and the oxide/silicon interface. The technique can be implemented into fab routine electric-test procedures for simultaneously monitoring change of doping concentration in polysilicon and silicon during process development