Determinant formulas for class numbers in function fields

In this paper, by extending Kucera's idea to the function field case, we obtain several determinant formulas involving the real class number and the relative class number of any subfield of cyclotomic function fields. We also provide several examples using these determinant formulas.

     

Fourier-Feynman transform, convolution and first variation

We examine several interesting relationships and expressions involving Fourier-Feynman transform, convolution product and first variation for functionals in the Fresnel class F(B) of an abstract Wiener space B. We also prove a translation theorem and Parseval's identity for the analytic Feynman integral. This revised version was published online in June 2006 with corrections to the Cover Date.     

Generation of highly stable amidate anion in anionic polymerization of 3‐(triethylsilyl)propyl isocyanate

To study living anionic polymerization, 3‐(triethylsilyl)propyl isocyanate (TEtSPI) monomer was synthesized by hydrosilylation of allylamine with triethylsilane and treatment of the resulting amine with triphosgene. The polymerization of TEtSPI was performed with sodium naphthalenide (Na‐Naph) as an initiator and in the absence and presence of sodium tetraphenylborate (NaBPh₄) as an additive in tetrahydrofuran (THF) at ?78 and at ?98 °C. A highly stabilized amidate anion for living polymerization of isocyanates was generated for the first time with the combined effect of the bulky substituent and the shielding action of the additive NaBPh₄, extending the living character at least up to 120 min at ?98 °C. Even the anion could exist at ?78 °C for 10 min. A block copolymer, poly(n‐hexyl isocyanate)‐b‐poly[(3‐triethylsilyl)propyl isocyanate]‐b‐poly(n‐hexyl isocyanate), was synthesized with quantitative yields and controlled molecular weights via living anionic polymerization in THF at ?78 °C for TEtSPI and ?98 °C for n‐hexyl isocyanate, respectively, with Na‐Naph with three times of NaBPh₄ as a common ion salt. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 933–940, 2004     

Solid phase synthesis of azapeptides using an automatic synthesizer

Peptides containing azaglycine located terminally or within the backbone have been prepared in the solid phase by means of an automatic synthesizer.     

A novel phase noise reduction technique in oscillators usingdefected ground structure

A new technique to reduce the phase noise in microwave oscillators is developed using the resonant characteristic of the defected ground structure (DGS). Two kinds of oscillators have been designed and measured for the examination of the reduction of phase noise by the DGS. The first adopts the DGS section under the microstrip line at the gate circuit, while the second has only the conventional microstrip line. Measurement shows reduced phase noise by 10-15 dB in the oscillator with the DGS compared to the conventional one     

Enhanced ferromagnetic properties of diluted Fe doped ZnO with hydrogen treatment

The single-phase diluted magnetic Fe-ion (5%) doped ZnO powders were prepared by solid-state reaction method. The powders were annealed in Ar or Ar/H₂(5%) atmosphere at 1200 °C. The crystal structure, electric and magnetic properties for the Zn_0.95Fe_0.05O powders have been studied with X-ray diffraction (XRD) vibrating sample magnetometer, resistance and Hall measurement. All the peaks for the XRD pattern of samples belong to the hexagonal (P6₃mc) lattice of ZnO, and no indication of a secondary phase. The lattice parameters for the Zn_0.95Fe_0.05O with an annealing in Ar/H₂(5%) atmosphere were a₀=3.256 Å and c₀=5.206 Å at room temperature. The hysteresis curve for the Zn_0.95Fe_0.05O at room temperature was enhanced ferromagnetic behaviour with an annealing in Ar/H₂(5%) atmosphere. We give an explanation for enhanced ferromagnetic behaviour with H₂ treatment by electric properties.     

Development of the Base Station Controller and Manager in the CDMA Mobile System

The base station (BS) in the CDMA Mobile System (CMS) connects calls through the radio interface and is designed to provide mobile subscribers with high quality service in spite of mobile subscribers’ motions. The BS consists of multiple base station transceiver subsystems (BTSs), a base station controller (BSC) and a base station manager (BSM). This paper is concerned with the BSC and the BSM. The BSC is located between the BTSs and the mobile switching center (MSC) connected with the public network, and is responsible for controlling mobile calls from and to mobile subscribers via the BTSs. The BSM provides operator-interfaces per the BS and takes responsibility of operation and maintenance (OAM) of the BS. Design of the BSC is based on two module types: functional module and unit module. The functional module is used to support new services easily and the unit module to increase the system capacity economically. Both modular types are easily achieved by inserting the corresponding modules to the system. Particularly, in order to efficiently support the soft handover which is one of CDMA superior advantages, the BSC adopts a large high-speed packet switch connecting up to 512 BTSs, and thus mobile subscribers can be provided with soft handover in high probability. The BSM is based on a commercial workstation to support OAM functions efficiently and guarantee high reliability of the functions. The BSM uses graphical user interface (GUI) for efficient OAM functions of the BS.     

Time dependent analysis of finite buffer fluid flows and risk models with a dividend barrier

Based on the matrix-analytic approach to fluid flows initiated by Ramaswami, we develop an efficient time dependent analysis for a general Markov modulated fluid flow model with a finite buffer and an arbitrary initial fluid level at time 0. We also apply this to an insurance risk model with a dividend barrier and a general Markovian arrival process of claims with possible dependencies in successive inter-claim intervals and in claim sizes. We demonstrate the implementability and accuracy of our algorithms through a set of numerical examples that could also serve as test cases for comparing other solution approaches.      

An analytical model for high electron mobility transistors

In this paper we present a new model for HEMT's which is based on a single analytical function that describes the electron concentrations in the two dimensional electron gas and in the AlGaAs layer. Besides accounting for the AlGaAs conduction, the model includes the effect of mobility degradation, channel length modulation in the saturation region and the series resistances R_S and R_D. The model results in closed form expressions for the current, transconductance, output conductance and gate capacitance. Finally, the theoretical predictions of the model are compared with the experimental data and shown to be in good agreement over a wide range of bias conditions