InGaN/GaN MQW p–n junction photodetectors

InGaN/GaN multiquantum well (MQW) p–n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p–n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 10⁵ when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p–n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.     

Measurement and modeling of self-heating in SOI nMOSFET's

Self-heating in SOI nMOSFET's is measured and modeled. Temperature rises in excess of 100 K are observed for SOI devices under static operating conditions. The measured temperature rise agrees well with the predictions of an analytical model and is a function of the silicon thickness, buried oxide thickness, and channel-metal contact separation. Under dynamic circuit conditions, the channel temperatures are much lower than predicted from the static power dissipation. This work provides the foundation for the extraction of device modeling parameters for dynamic operation (at constant temperature) from static device characterization data (where temperature varies widely). Self-heating does not greatly reduce the electromigration reliability of SOI circuits, but might influence SOI device design, e.g., requiring a thinner buried oxide layer for particular applications and scaled geometries     

Finite-difference analysis of dielectric-loaded cavities using thesimultaneous iteration of the power method with the Chebyshevacceleration technique

A numerical procedure using the finite-difference technique, simultaneous iteration based on the power method, and the Chebyshev-polynomial preconditioning is proposed to analyze dielectric-loaded cavities. The merit of this method is that no matrix inversions are invoked and the convergence rate of the power method is greatly accelerated by the preconditioning. The TE, TM, and hybrid modes in axisymmetrical cavities loaded with a rod or ring dielectric resonator are analyzed. For the hybrid modes, an H_r-H_z formulation is proposed. Accurate numerical results are obtained efficiently and no spurious solutions are found by the present method     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied     

Physical aging of a polyetherimide: Creep and DSC measurements

Creep and differential scanning calorimetry (DSC) measurements have been used to study the physical aging behavior of a polyetherimide. Isothermal aging temperatures ranged from 160°C to T_g with aging times ranging from 10 min to 8 days. The only measurable effect of physical aging on the short-time creep curves is a shift of the creep compliance to longer times. Andrade plots of the compliance versus the cube root of time are linear at short times with the slope β decreasing with increasing aging time to a constant value once equilibrium is reached. Log β³ is related directly to the degree to which the creep curves shift to longer times with physical aging, and is used in this work as a measure of physical aging. A reduced curve of log β³ versus log aging time is obtained for the aging temperatures investigated by appropriate vertical and horizontal shifts. The enthalpy change during aging increases linearly with the logarithm of the aging time, t_a, leveling off at equilibrium at values which increase with decreasing aging temperature. Hence, both nonequilibrium and equilibrium temperature shift factors can be calculated from the DSC data. Good agreement is observed between the equilibrium temperature shift factors obtained from the creep and DSC data. The temperature dependence of the nonequilibrium temperature shift factors is found to be an order of magnitude smaller than that of the equilibrium shift factors. The time scales to reach equilibrium for enthalpy and for mechanical measurements are found to be the same within experimental error. © 1995 John Wiley & Sons, Inc.     

奇异类内离差矩阵条件下的Fisher最优判据

特征提取是模式分类与识别的重要环节，Fisher最优判据是特征提取的基本方法之一．本文提出了一种计算奇异类内离差矩阵条件下Fisher最优判据的新方法，并给出了计算步骤．     

A highly efficient polarized superfluorescent fiber source for fiber-optic gyroscope applications

We demonstrate a novel polarized superfluorescent fiber source (SFS) that increases the output power in the desired polarization by a factor of 1.96 over that of an unpolarized SFS at the same pump. This is achieved by inserting a polarizer at the optimal point in the bidirectionally pumped erbium-doped fiber of an unpolarized SFS. Stable pump-power-dependent mean wavelength operation and less sensitivity to the insertion loss, important for fiber-optic gyroscope applications, are obtained in this configuration.     

与单形外接球心有关的一个不等式

若n维单形A＝A1A2…An r的外接球心O位于其内部，单形A与单形Ai＝A1A2…Ai-1OAi 1…An 1的外接球半径分别为R与Ri(i=1,2,…,n 1），本文证明了：n 1↑П↑i=1Ri≥(nR/2)^n 1，而等号成立的充分必要条件为单形A正则。     

北京自由电子激光最近进展──实现饱和振荡

北京自由电子激光(BFEL)装置于1993年底在10.68μm处实现了饱和振荡.输出激光能量为3mJ,饱和平顶宽度2μs.对应饱和振荡平均功率为210kW(宏脉冲),峰值功率约为20MW,比自发辐射高8个量级,单程小讯号净增益为24%,转换效率为0.45%,与理论预期结果相符.光束质量接近衍射极限.目前装置可工作于9-11μm.