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81.
A convenient route was developed to synthesize S-oxo-[(methylthio)-methyl]cysteinols on a large scale from cheap l-serine as the starting material. The structures of diastereoisomers were determined by NMR, CD spectra, and X-ray diffraction analysis. All four diastereoisomers were examined for their ability to inhibit certain bacteria from growing. 相似文献
82.
Zhang Li Chun Jin Hai Yan Ye Hong Fei Gao Yu Zhi Ning Bao Jun Mo Bang Xian 《Electron Devices, IEEE Transactions on》2002,49(6):1075-1076
A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm2. The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively 相似文献
83.
1引言设A是n阶非负方阵.设矩阵方程(1)AXA=A,(2)XAX=X,(3)(AX)~T= AX,(4)(XA)~T=XA,(5)AX=XA.A具有非负广义逆是指存在非负方阵X满足方程(1)~(4),并记为A~(?).A具有非负群逆是指存在非负方阵X满足方程(1),(2),(5),并记为A~#.在A~(?)存在的前提下,两者相同的充分必要条件有(a)AA~(?)=A~(?)A;(b)A~(?)=p(A),其 相似文献
84.
Syntheses, structures, and properties of novel molybdenum and tungsten complexes of fullerenes 总被引:1,自引:0,他引:1
The synthesis and characterization of several fullerene-based organometallic complexes containing Mo and W is reported. 相似文献
85.
Analysis on the effectiveness of the 20-H rule for printed-circuit-board layout to reduce edge-radiated coupling 总被引:1,自引:0,他引:1
Montrose M.I. Er-Ping Li Hong-Fang Jin Wei-Liang Yuan 《Electromagnetic Compatibility, IEEE Transactions on》2005,47(2):227-233
This paper presents the quantified study of the electromagnetic radiation mechanism of the 20-H rule using a numerical approach that has not yet been systematically addressed. The 20-H rule is a rule-of-thumb layout technique recommended to minimize radiated fields propagating from the edges of a printed circuit board (PCB) coupling onto nearby structures. Propagating electromagnetic fields may corrupt adjacent cable assemblies, sheet metal enclosures, and aperture openings. The magnitude of this design rule is investigated using the full-wave finite-difference time-domain (FDTD) method. An analysis on whether benefits exist from use of this rule is examined and under what conditions the rule is valid when correctly implemented. The purpose of this paper is to provide insight into the validity of the 20-H rule, recognizing that every PCB will have different simulation results. FDTD is used to capture a snapshot view of field propagation. This view allows one to determine the validity of the 20-H rule at a single point of time within a dynamic structure and what may be expected when digital components are finally added to a PCB assembly, which generally negates simulated results. 相似文献
86.
Jong Chan Lee Jin Young Park So Young Yoon Yong Hun Bae Seung Jun Lee 《Tetrahedron letters》2004,45(1):191-193
A novel and direct method for the synthesis of α-halocarbonyl compounds using sequential treatment of carbonyl compounds with [hydroxy(tosyloxy)iodo]benzene followed by magnesium halides under solvent-free microwave irradiation conditions is described. 相似文献
87.
88.
Hai-Ping Cao 《Journal of fluorine chemistry》2006,127(8):1079-1086
In the presence of sodium dithionite and DMSO, the intramolecular radical cyclization of 4-chloro-1,1,2,2,3,3,4,4-octafluorobutylbenzenes is achieved to give the corresponding cyclic compounds in moderate to good yields. 相似文献
89.
利用引进的制造技术和设备,制作出了 APT(STLRI)—1.78型系列化光纤连接器。 相似文献
90.
Sosnowchik B.D. Azevedo R.G. Cao A. Lin L. Pisano A.P. 《Advanced Packaging, IEEE Transactions on》2005,28(4):626-634
This paper presents the rapid, low-temperature bonding between silicon and steel using the rapid thermal annealing process. Three different thin-film adhesion layer systems including silver, gold, and nickel were utilized as the intermediate bonding material to assist the eutectic Pb/Sn bonding between silicon and steel. The bonding temperature was set at 220/spl deg/C for 20 s, with a 20-s ramp-up time. Five experiments were conducted to determine the strength of the bond, including static tensile and compressive four-point bend tests, axial extension tests, tensile bending fatigue tests, and corrosion resistance tests. The test results have shown that the gold adhesion layer is the most robust, demonstrating minimal creep during fatigue tests, no delamination during the tensile or compressive four-point bend tests, and acceptable strength during the axial extension tests. Additionally, all adhesion layers have withstood four months of submersion in various high-temperature solutions and lubricants without failure. Simulations of the axial stresses and strains that developed during the four-point bend and axial extension tests were performed and showed that the presence of the silicon die provides a local reinforcement of the bond as observed in the experimental tests. 相似文献