液态铅的电阻率

采用精确的结构因数实验数据和Ｂｅｈａｖｉ模型赝势，用Ｚｉｍａｎ理论计算了液态铅的电阻率．计算结果和实验数据符合很好．讨论了Ｚｉｍａｎ理论对液态铅的适用性以及适合于液态铅的赝势的特征．     

Characteristic of a broadband Ti:LiNbO3 optical modulator with buried electrodes and etched grooves in the buffer layer

Traveling wave Ti:LiNbO₃ Mach-Zehnder optical modulators with buried electrodes and etched grooves in the SiO₂ buffer layer are analyzed by the finite element method. The tradeoff between the bandwidth BW and the half-wave voltage Vπ is discussed. The value of BW/Vπ is used to weight the total performance of the modulator. Taking a thick buffer layer and etching deep grooves in the buffer layer are demonstrated as two effective methods to improve the performance of the modulator. A 3-dB optical bandwidth of 18 GHz with half-wave voltage 5V at a wavelength of 1.55 pm could be obtained even though the electrode is not very thick. When the requirement of half-wave voltage is not very critical, a bandwidth of more than 100 GHz can be obtained.     

激光光束质量诊断技术的进展

本文介绍了激光光束质量诊断技术近年来的进展，以及国际标准化组织推荐的聚集光束测量法，指出了该技术的发展方向。     

Preparation of enantiomerically pure (R)-2-butyryloxymethylglycidol by lipase-catalyzed asymmetric hydrolysis

Optically active epoxy alcohol, (R)-2-butyryloxymethylglycidol3 which is the precursor of a tert-alcohol chiral building block was obtained in high enantiomeric purity, 98.7% e.e., by lipase-catalyzed asymmetric hydrolysis using a phosphate buffer and organic co-solvent system in 95% of chemical yield.     

Large purely refractive nonlinear index of single crystal P-toluenesulphonate (PTS) at 1600 nm

Z-scan measurements at 1600 nm on single-crystal PTS (p-toluene sulfonate) with single, 65 ps pulses gave a complex nonlinear refractive index coefficient of n₂=2.2(±0.3)×10^-12 cm²/W at 1 GW/cm² and α₂<0.5 cm/GW. This is the first highly nonlinear, organic material to satisfy the conditions imposed by the figures of merit     

A Novel Body-tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode

A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current (I_DS-V_DS) curves, substrate resistance effect on the I_DS-V_DS curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits.     

单模光纤中皮秒啁啾脉冲压缩

对单模光纤正群速色散区秒啁啾脉冲的非线性传进行了近似的解析分析和定量的数值计算。结果表明，负啁啾脉冲在传输过程中能得到有效压缩。压缩比与脉冲初始峰值功率和初始啁啾程度有关。初始峰值功率一定的脉冲，其压缩比随初始啁啾程度的增大面大，初始啁啾程度一定的脉冲，压缩比随初始峰值功率的增大而减小，表明自相位调制效应导致脉冲压缩效果变差。计算结果还表明，在脉冲时域宽度得到压缩的同时，光谱宽度也能得到同步压缩。     

旋波媒质基本参数的一种测试方法

本文提出了直接利用旋波材料板的Ｓ参数获得其基本参数的方法。通过自由空间测量旋波材料板的反射场和透射场，可以反演得到媒质的复介电常数、复磁导率、旋波量以及透射场的轴比和旋转角，测试程序简单，结果精度高。     

MOSFET亚阈特性分析与低温按比例缩小理论的研究

器件尺寸按比例缩小是实现超大规模集成电路的有效途径，但寄生和二级效应却将器件限在一定的水平，本文在对比分析常温与低温下小尺寸器件效应的基础上，重点研究了ＭＯＳ器件亚阈特性对器件性能及按比例缩小的影响，并根据低温工作的特点，提出了ＭＯＳ器件一种低温按比例缩小规则，该原则对低温器的优化设计，从而更大程度在提高电路与系统性能具有重要的指导意义。