III-Nitride Quantum Devices—Microphotonics

Photonic devices based on III-nitrides offer benefits such as UV/blue emission, large band offsets of InN/GaN/AlN heterostructures allowing novel quantum well (QW) device design, and inherently high-emission efficiencies. Furthermore, due to their mechanical hardness and larger band gaps (when compared with conventional semiconductor devices), III-nitride-based devices may operate at much higher temperatures and voltages/power levels for any dimensional configuration and in harsher environments than other semiconductor devices and are expected to provide much lower temperature sensitivities. These are crucial advantages for many applications. Over the last decade, the physics of microsize photonic devices has been investigated. New physical phenomena and properties are expected to dominate as the device size scales down. The microsize light emitters offer benefits over edge emitters such as the ability to create arrays of individually controllable pixels on a single chip, enhanced quantum efficiency, and greatly reduced lasing threshold. Rapid progress in the area of III-nitride microphotonics has been made. The growth and fabrication of micron and submicron size photonic structures based on III-nitride wide bandgap semiconductors has been achieved, and the technology has made it possible to integrate arrays of optical elements to form active photonic-integrated devices. One example is an interconnected µ-LED with enhanced emission efficiency over the conventional LEDs for the same device area. Another example is a µ-LED array with independently addressed pixels or III-nitride microdisplay. III-nitride microdisplay may offer performance that is superior to microdisplays fabricated from liquid crystals and organic LEDs. The third example presented is III-nitride UV Focal Plane Arrays (UV-FPA) of detectors. So far, the operation of AlGaN UV-FPA with size up to 256×256 pixels with 30×30?μm² unit cells has been demonstrated. Together with the nature of their two-dimensional array, these active micro-photonic devices show promise in many important applications, such as optical communications, signal and image processing, optical interconnects, computing, enhanced energy conversion and storage, chemical, biohazard substances, and disease detection, missile and shellfire, atmospheric ozone-level, and flame sensing. III-nitride microlens arrays have been fabricated successfully for blue and UV wavelength applications on GaN and AlN. The successful fabrication of microlens arrays based on III-nitride materials opens the possibility for monolithically integrating nitride-based micro-size photonic devices, as well as coupling light into, out of, and between arrays of III-nitride emitters and detectors, especially for short wavelengths covering the green-blue to deep UV (200?nm) region. Nanofabrication and characterization of photonic crystals with diameter/periodicity as small as 100/180?nm on InGaN/GaN MQW has been achieved. An unprecedented maximum enhancement factor of 20 was obtained under optical pumping. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550?nm wavelength window. The feasibility of developing novel photonic integrated circuits based on III-nitride wide bandgap semiconductors for fiber-optical communications has been investigated.     

ABS防抱死系统及其检测

现代汽车中有一种先进的制动机构。可保证在制动时不是完全刹死滑行，而是让车轮仍有一定的滚动．经研究这种方法可以更有效地制动．防抱死系统有一个自动检测车速的装置，用来控制车轮的转动，其原理如图1，铁质齿圈P与车轮同步转动，右端有一个绕有线圈的磁体，G是一个电流检测器．当车轮带动齿轮转动时，由于齿靠近线圈时被磁化，使磁通量增强，     

Lower bound on minimum lee distance of algebraic?geometric codes over finite fields

Algebraic-geometric (AG) codes over finite fields with respect to the Lee metric have been studied. A lower bound on the minimum Lee distance is derived, which is a Lee-metric version of the well-known Goppa bound on the minimum Hamming distance of AG codes. The bound generalises a lower bound on the minimum Lee distance of Lee-metric BCH and Reed-Solomon codes, which have been successfully used for protecting against bitshift and synchronisation errors in constrained channels and for error control in partial-response channels.     

小阶跃反应性输入时点堆中子动力学方程的解析解

对小阶跃反应性输入（0<ρ,０<β）且有温度反馈时点堆中子动力学方程进行了研究. 导出任意初始功率条件下核反应堆功率、反应性与时间的解析表达式. 分析和讨论了初始功率与输入小阶跃反应性的大小对功率、反应性变化规律的影响，得到了一些新的结果. 关键词： 中子动力学 反应性 点堆 温度反馈     

Imprinting by hot embossing in polymer substrates using a template of silica glass surface-structured by the ablation of LIBWE method

Laser-induced backside wet etching (LIBWE) of silica glass plates was performed to fabricate an imprinting template for hot embossing in polymer substrates such as polystyrene and silicone resin. Well-defined inverse surface-micropatterns of gratings and grid arrays on the substrates were produced by the hot embossing using a surface-structured silica glass as the template. These results indicate that the LIBWE method allows us to generate robust glass molding tools that exhibit the inverse shapes of the intended microstructures. PACS 52.38.Mf; 68.47.Mn; 81.05.Kf; 81.05.Lg; 83.50.Uv     

Audio-visual interaction in multimodal communication

Multimedia signal processing is more than simply “putting together” text, audio, images, and video. It is the integration and interaction among these different media that creates new systems and new research challenges and opportunities. In multimodal communication where speech is involved, audio-visual interaction is particularly significant     

ANTI FUZZY VECTOR SPACES（Ⅱ）

ＡＮＴＩＦＵＺＺＹＶＥＣＴＯＲＳＰＡＣＥＳ（Ⅱ）ＣｈｅｎＹｏｎｇｎｉａｎ（ＤｅｐａｒｔｍｅｎｔｏｆＭａｔｈｅｍａｔｉｃｓ，ＸｉｎｊｉａｎｇＮｏｒｍａｌＵｎｉｖｅｒｓｉｔｙ，８３００５４，Ｘｉｎｊｉａｎｇ，Ｐ．Ｒ．Ｃｈｉｎａ）ＡＮＴＩＦＵＺＺＹＶＥＣＴ...     

Tilted superlattice composition profile determined by photoluminescence and thermal disordering

The composition profile of an (AlAs)_1/2(GaAs)_1/2 tilted superlattice is characterized for the first time. The tilted superlattice sample is thermally disordered, and the energy of the direct band gap photoluminescence peak is measured as a function of increasing layer interdiffusion. The shift in the photoluminescence peak energy after completely disordering the tilted superlattice is 39 meV. A theoretical model is used to simulate the change in band gap as a function of layer interdiffusion for several composition profiles. The profile that gives the best fit to the experimental data is chosen. The tilted superlattice composition profile is found to be sinusoidal, varying from Al_0.40Ga_0.60As to Al_0.60Ga_0.40As.     

用窄带滤光片作为调谐元件的外腔半导体激光器

分析了窄带滤光片的调谐原理，拟合了一块实际滤光片的透射率函数，它是理论的透射率函数和一个洛仑兹函数的乘积。利用１．３μｍ的外腔式调谐激光器实现了１２７２．５ｎｍ至１２９１．７ｎｍ范围内的不连续宽带调谐。