Spectral characteristics of vertical-cavity surface-emitting lasers with external optical feedback

The measurement of the effects of external optical feedback on the spectra of VCSELs (vertical-cavity surface-emitting lasers) is reported. It is surprising that VCSELs have a sensitivity to optical feedback comparable to that of conventional edge-emitting lasers such as DFBs despite their significantly different structures. This is because the extremely short cavity length of VCSELs negates the effects of their highly reflective output mirrors. As in edge-emitting lasers, VCSELs exhibit well-defined regimes of feedback effects in their spectra. Since optical isolators cannot be easily applied to VCSELs due to their array structure, these lasers may be most useful in applications which are not sensitive to the spectral qualities of the light source.<>     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Queueing analyses of traffic access control strategies withpreemptive and nonpreemptive disciplines in wideband integrated networks

A multiserver queueing model of access control strategies for a wideband integrated services digital network (ISDN) is considered. There are two types of service requests (SRs): Type 1 SR requires b servers (basic bandwidth units, BBUs) of the c available servers, while Type 2 SR requires a single server. Both types of SRs are queuable in two separate infinite-size buffers. A Type 1 SR is allowed to seize d(⩽b) servers at first and then acquire additional servers as they become available to meet the original requirement of b servers. The arrival processes of both types of SRs are Poisson and the service times are exponentially distributed with mean b/dμ₁ and 1/μ₂ for Type 1 SR and Type 2 SR, respectively. Preemptive and nonpreemptive priority disciplines with movable boundary are analyzed using the Neuts' matrix-analytic approach. Numerical examples of the queue length distribution and the mean waiting time of the SRs are presented     

Analysis and design-optimization of LCC resonant inverter forhigh-frequency AC distributed power system

The analysis and design of an LCC resonant inverter for a 20 kHz AC distributed power system are presented. Several resonant converter topologies are assessed to determine their suitability for high efficiency power conversion, under resistive and reactive loads. Two LCC-resonant inverter designs were implemented. One with all switches operating with zero voltage switching (ZVS), and another with two switches operating with ZVS and two switches with zero current switching (ZCS). The experimental results are presented along with a performance comparison of the two versions     

Tri-band frequency selective surface with circular ring elements

Theoretical analysis, physical reasonings, and experimental verifications are presented for a frequency selective surface with circular ring elements. Both double-screen and single-screen designs are generated for a tri-band system that reflects the X-band signal while transmitting through the S- and Ku-band signals. In these designs, the dielectric loading effect is used to reduce ring size and element spacing and thus avoid the grating lobe problem. The circular ring element is very insensitive to a large variation of the RF incident angle     

A novel technique for profiling the lateral n- dopingconcentrations of submicron LDD MOS devices

This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n^- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n^- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology     

Computation of the average power pattern of a reflector antennawith random surface errors and misalignment errors

To specify manufacturing tolerances of a reflector antenna, various errors such as random surface errors and misalignment errors must be considered at one time because superposition of the effects of those errors may not hold. Based on the Rahmat-Samii's formulation (1983), a method for computing efficiently the average power pattern of a reflector antenna with those errors is presented. Simulation results show that superposition of the effects of errors does not generally hold and demonstrate how those errors degrade the peak-gain and sidelobe levels     

A selective CVD tungsten-strapped polysilicon local interconnectiontechnology

A local interconnection technology utilizing polysilicon strapped with selective-chemical-vapor-deposited (CVD) tungsten has been developed. Both n- and p-channel MOS transistors have been successfully fabricated using this technology. Tungsten deposited on polysilicon is an attractive gate shunt and local interconnection material because of its low resistivity, immunity to dopant segregation and diffusion, and resistance to electromigration. A potential problem of this technology is the excessive diode leakage current associated with strapping shallow source/drain diodes with tungsten. The leakage is attributed to defects induced by the heavy source/drain implant, which can be effectively eliminated with a proper annealing procedure     

New queueing strategies employing service interval-based priority for real-time communications in atm networks

In this paper, we propose queueing strategies employing the service interval-based priority (sip) which can provide delay-bounded, and loss-free services, while maximizing bandwidth utilization in the atm network. We also describe a variation of the sip, the residual service interval-based priority (rsip) which can achieve almost full utilization by assigning priorities dynamically on the basis of the residual service interval. We store the realtime cells belonging to different connections in logically separated queues, and for each queue, we set a parameter called service interval, during which only one cell is allowed to be transmitted. The sip server takes and transmits the head-of-line (hol) cell of the queue which has the smallest service interval, while the rsip server selects the queue with the smallest residual service interval. When there is no eligible real-time cell, it transmits non-real-time cell, thus enabling a maximized bandwidth utilization. Employing the above queueing strategies, we analyze the delay characteristics deterministically with the leaky bucket bounded input traffic and then dimension the optimal service interval. In dimensioning the service interval and buffer space of each real-time service queue, we consider burstiness of traffic in conjunction with delay constraints, so that bandwidth utilization can get maximized. In addition, we consider the issues of protection from malicious users, average bandwidth utilization, and coupling between the delay bound and the bandwidth allocation granularity.