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21.
Xie K. Zhao J.H. Flemish J.R. Burke T. Buchwald W.R. Lorenzo G. Singh H. 《Electron Device Letters, IEEE》1996,17(3):142-144
A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm2 have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300°C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities 相似文献
22.
旋波媒质基本参数的一种测试方法 总被引:5,自引:0,他引:5
本文提出了直接利用旋波材料板的S参数获得其基本参数的方法。通过自由空间测量旋波材料板的反射场和透射场,可以反演得到媒质的复介电常数、复磁导率、旋波量以及透射场的轴比和旋转角,测试程序简单,结果精度高。 相似文献
23.
Chun Hu Ji Zhao Li G.P. Liu P. Worley E. White J. Kjar R. 《Electron Device Letters, IEEE》1995,16(2):61-63
The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process 相似文献
24.
本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。 相似文献
25.
薄膜磁头磁轭制备工艺研究 总被引:1,自引:1,他引:0
本文重点讨论了用不同的工艺方法来制备薄膜磁头中的关键元件-磁轭。采用多次光刻的方法克服湿法工艺中磁性膜NiFe层的侧向钻蚀问题,从而实现对磁轭几何尺寸的精确控制,并对几种工艺方法的优缺点作了比较详细的分析。 相似文献
26.
随着计算机技术的发展和水平的提高,图像,声音,图形等多媒体信息逐步应用于管理信息系统之中。文章中提出了图文数据库系统设计中存在的三个基本问题。讨论了介绍了图文数据库系统的设计方法和实现技术。 相似文献
27.
In this research, a simple, sensitive chemiluminescence (CL) method for the determination of humic acid (HA) in water samples was first developed based on the redox reaction between humic acid and cerium(IV) in the acidic condition. Different with the former redox CL reaction which occurred in alkaline solution, no enhancers were needed and neither precipitation nor a second contamination would occur in the present CL system. Comparing with other spectrometric methods, we find that the proposed analysis system had better applicability and accuracy. Under the optimal experiment conditions, the CL peak height was linear with the concentration of HA in the range of 0.03 to 10.0 microg mL(-1). The detection limit is 0.01 microg mL(-1) (S/N = 3), and the relative standard deviation was 2.3% for 0.5 microg mL(-1) HA solution with eleven repeated measurements. The present CL method was successfully applied to the determination of HA in tap water, spring water and river water samples with good recovery from 90.0 to 110.0%. A possible CL mechanism was proposed based on the results of UV and fluorescence spectrometry and the CL spectrum of HA. It was speculated that the semi-quinone radicals in the excited state were the emitters. 相似文献
28.
Anchoring Properties of Nematic Liquid Crystals Studied Using the Attenuated Total Reflection Method
By using the attenuated total reflection method associated with the excitation of surface plasmons, the tilt angle of the liquid crystal director and its gradient at the surface are measured in a planar nematic cell as a function of the applied voltage. The surface anchoring anisotropy δπ of the liquid crystal and the surface elastic constant ks, are found to be δπ = 0.288 erg/cm and ks, = 9·12 × 10-11 erg, respectively, when the boundary condition suggested by Barbero et al is used. The theoretical and experimental values obtained with this boundary condition and that of Mada are discussed. The results show that the boundary condition proposed by Barbero et al is in better agreement with the experiment. 相似文献
29.
30.