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921.
We consider the problem of turbo multiuser detection for synchronous and asynchronous code-division multiple-access (CDMA) in the presence of unknown users. Turbo multiuser detectors, as previously developed, typically require knowledge of the signature waveforms of all of the users in the system and ignore users whose signature sequences are unknown, e.g., users outside the cell. We develop turbo multiuser detection for CDMA uplink systems and other environments in which the receiver has knowledge of the signature waveforms of only K˘⩽ K users. Subspace techniques are used to estimate the interference from the unknown-users and the interference estimate is subtracted from the received signal. We see that the new receiver significantly outperforms the conventional turbo multiuser receiver for moderate and high signal-to-noise ratios. It is also seen that the traditional turbo receiver provides little gain through iteration when unknown users are present 相似文献
922.
923.
王同科 《高等学校计算数学学报(英文版)》2002,11(2):213-225
1 IntroductionFinitevolumeelementmethodorFVEMusesavolumeintegralformulationofthedif ferentialequationwithafinitepartitioningsetofvolumetodiscretizetheequation ,thenre strictstheadmissiblefunctionstoalinearfiniteelementspacetodiscretizethesolution ([1 -4 ] ) .… 相似文献
924.
采用从头计算方法,计算了反式和顺式聚乙炔的氢原子在垂直于聚乙炔分子面方向振动的红外光谱,计算表明,Gibson等用红外吸收实验所测得的谱线的确是聚乙炔的CH面外振动产生的谱线,经100℃长时间加热后,顺式聚乙炔变为反式聚炔,但波数为740cm^-1的谱级仍保留5%的强度。 相似文献
925.
甲基红染料掺杂的聚乙烯醇薄膜光存储特性的实验研究 总被引:1,自引:0,他引:1
用2倍频小型YAG激光(532nm)作为写入光和擦除光,用He-Ne激光器623.8nm线作为读出光,用CCD作为探测器,研究了不同写入光功率下,甲基红/聚乙烯醇(MR/PVA)薄膜光栅生长的动力学过程和不同擦除光功率下,光栅擦除的动力学过程.结合光栅生长曲线的波动现象,对光存储机制进行了新的探讨.实验发现,两写入光和读出光的功率配比为1:1:1时,可获得最大衍射效率,提出读出光对写入过程具有双重作用的物理模型,对此实验结果给出了合理的解释. 相似文献
926.
927.
928.
Zhi-Gong Wang Berroth M. Nowotny U. Hofmann P. Hulsmann A. Kohler K. Raynor B. Schneider J. 《Solid-State Circuits, IEEE Journal of》1994,29(8):995-997
A monolithically integrated clock recovery (CR) circuit making use of the phase-locked loop (PLL) circuit technique and enhancement/depletion AlGaAs/GaAs quantum well-high electron mobility transistors (QW-HEMT's) with gate lengths of 0.3 μm has been realized. A novel preprocessing circuit was used. In the PLL a fully-balanced varactorless VCO was applied. The VCO has a center oscillating frequency of about 7.7 GHz and a tuning range greater than 500 MHz. A satisfactory clock signal has been obtained at a bit rate of about 7.5 Gb/s. The power consumption is less than 200 mW at a supply voltage of -5 V 相似文献
929.
Jyh-Ming Wang Sung-Chuan Fang Wu-Shiung Feng 《Solid-State Circuits, IEEE Journal of》1994,29(7):780-786
Two new methods are proposed to implement the exclusive-OR and exclusive-NOR functions on the transistor level. The first method uses non-complementary signal inputs and the least number of transistors. The other one improves the performance of the prior method but two more transistors are utilized. Both of them have been fully simulated by HSPICE on a SUN SPARC 2 workstation 相似文献
930.
Tahui Wang Chimoon Huang Chou P.C. Chung S.S.-S. Tse-En Chang 《Electron Devices, IEEE Transactions on》1994,41(9):1618-1622
A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at Vg ≃0.5 Vd in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states 相似文献