Indentation responses of piezoelectric films

Frictionless indentation responses of transversely isotropic piezoelectric film/rigid substrate systems under circular cylindrical indenter (i.e., punch), conical indenter (i.e., cone), and spherical indenter (i.e., sphere) are investigated. Both insulating and conducting indenters are considered. The technique of Hankel transformation is employed to derive the corresponding dual integral equations for the mixed boundary value indentation problems. For the two limiting cases of infinitely thick and infinitely thin piezoelectric films, closed-form solutions are obtained. For piezoelectric films of finite thickness, a numerical method is constructed to solve the dual integral equations and semi-empirical models having only two unknown parameters are proposed for the responses of indentation force, electric charge and electric potential, and contact radius. With the two parameters inferred from the numerical results, the semi-empirical formulae are found to provide good estimates of the indentation responses for the two limiting cases of infinitely thick and thin piezoelectric films, as well as those in between. The inferred parameters in the proposed semi-empirical formulae for normalized indentation force and electric charge are checked against four different piezoelectric materials and are found to be insensitive to the selection of piezoelectric materials. It is believed that the proposed semi-empirical indentation formulae are useful in developing experimental indentation techniques to extract the material properties of piezoelectric films.     

A 16-Mb MRAM featuring bootstrapped write drivers

A 16-Mb magnetic random access memory (MRAM) is demonstrated in 0.18-/spl mu/m three-Cu-level CMOS with a three-level MRAM process adder. The chip, the highest density MRAM reported to date, utilizes a 1.42/spl mu/m/sup 2/ 1-transistor 1-magnetic tunnel junction (1T1MTJ) cell, measures 79 mm/sup 2/ and features a /spl times/16 asynchronous SRAM-like interface. The paper describes the cell, architecture, and circuit techniques unique to multi-Mb MRAM design, including a novel bootstrapped write driver circuit. Hardware results are presented.     

企业信息化中的网络存储整合应用

首先介绍了网络存储技术中NAS技术和SAN技术的基本原理,并对两者的特性进行了比较;然后详细介绍了企业信息化过程中网络存储整合的一个典型案例,分析了其整合前存在的不足,制定有效的整合实施方案,并对实施过程中许多关键技术部分进行了阐述,最终很好的达到了预定目标;最后总结了网络存储整合需要规划多种技术相融合的必要性.     

硅微板条谐振式传感器谐振频率分析及计算

对硅微机械谐振式传感器的谐振频率计算提出了新的物理模型—两端固支薄板条模型，该模型不同于常说的硅桥（梁）或硅弦模型。计算结果表明该模型更符合实际，优于有关文献结果。     

用窄带滤光片作为调谐元件的外腔半导体激光器

分析了窄带滤光片的调谐原理，拟合了一块实际滤光片的透射率函数，它是理论的透射率函数和一个洛仑兹函数的乘积。利用１．３μｍ的外腔式调谐激光器实现了１２７２．５ｎｍ至１２９１．７ｎｍ范围内的不连续宽带调谐。     

Miniature InGaAsP/InP phase modulator for integrated opto-electronics

Miniature, etching ridge InGaAsP/InP Phase Modulator with highly efficient phase shifting efficiency of 60°/V.mm and 43°/V.mm for TE and TM modes, respectively, and 3 dB bandwidth of 650 MHz at 1.52 μm are reported. It is well suited for integrated opto-electronics. Some functions depending on bandwidth of the devices are discussed.     

快速汉克尔变换及光束均匀化

介绍快速汉克尔变换，以及它在二元光学设计中的应用，并就光束均匀化问题进行了数值模拟，结果表明快速汉克尔变换算法是一种能用于二元光学设计的有效算法。     

LB技术制备大面积超薄PMMA抗蚀层的研究

采用自行研制的ＬＢ自动提膜装置，制备出大面积（１０×８ｃｍ２）、高质量的ＰＭＭＡ超薄抗蚀剂膜，并将其用于高分辨率铬掩模版的研制。通过电子束曝光，湿法蚀刻，制作了分辨率优于０．５μｍ，特征线宽０．３８μｍ的４（１００ｍｍ）铬掩模版。     

用于红外地平仪的双列硅集成热堆传感器

本文报道了试用于红外地平仪的新型热堆传感器。由于尺寸小、集成热偶对数高,故设计成双列硅集成结构,集成B-Sb热偶对为112对。采用集成电路工艺和微细加工技术研制,使器件获得较好的稳定性和可靠性。测得器件性能为:电阻10±1kΩ,响应率0.9～1.2V/W,时间常数<100ms.探测率D~*≈1×10~8cmHz~(1/2)/W。