高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

浅析数据挖掘与企业市场营销战略

数据挖掘是客户关系管理的重要组成部分,而客户关系管理的核心是营销管理。在高度信息化的社会的今天,数据挖掘在市场营销决策中起到越来越重要的作用,通过它可以实现对客户深度的把握,研究老客户,发现新客户,让企业实时把握住市场动态,及时地调整企业的营销策略,以在激烈的市场竞争中立于不败之地。     

npn AlGaN/GaN HBT模型与特性分析

基于实验数据对GaN材料的少子寿命和碰撞电离率进行了建模,应用漂移-扩散传输模型开展了npnAlGaN/GaN异质结双极晶体管的特性研究,给出了器件导通电压、偏移电压和饱和电压的解析式.结果表明:实际器件导通电压、偏移电压及饱和电压较大的原因主要是高基区电阻和基区接触的非欧姆特性,为器件的工艺制造提供了理论指导.     

拉远基站与系统设备的互联互通

随着3G牌照发放日期的逐步临近,人们对第3代移动通信(3G)的认识也更加清晰.2G与3G将融合发展,平滑过渡.2G业务增长的数据显示,2G还有很大的发展空间,2G与3G的过渡将是一个长期的过程.3G将首先在一些热点地区、业务量大的地方优先使用,在开始的时候没有必要大规模铺网,只需采用一些拉远基站就可以解决这些地区的3G覆盖问题.文章从网络应用的角度论述了拉远基站在未来3G组网中的重要作用,分析了目前部署3G拉远基站可能存在的问题,对互联互通、站址和网管等问题的解决方法提出了建议.     

Phase Transition VO2 Thin Films for Optical Switches

This paper presents a method to make vanadium dioxide (VO₂) crystallites on silicon substrates by reactive ion beam sputtering. The thickness of the thin film is about 100nm. The phase transition temperature of VO₂ is 65°C. The transmittance of the semiconducting phase VO₂ is about 50% and it is reduced to as low as 3% in metal phase at the infrared wavelenghth spectrum. The extinction ratio of the optical switches is 12dB. and the insertion loss is of 1-2dB. The switching time is about 1ms.     

Copper-D-penicillamine complex as potential contrast agent for MRI.

In vitro and in vivo proton T1 data are reported that demonstrate that the paramagnetic copper-D-penicillamine complex can be applied as a potential contrast agent to magnetic resonance imaging.     

Study of coupling between circular groove guide and rectangular groove guide

On the basis of the studies of single circular groove guide and single rectangular groove guide, the coupling of the two waveguides has been researched and the characteristic equation of circular—rectangular groove guide has been given in this paper.     

半导体元件清洗技术浅谈

随着社会的进步和科学技术的迅猛发展,对洗净技术的要求也越来越高。清洗方式多种多样,但最主要的是突出在喷射清洗和超声波清洗两大方面,应用于全国各行各业,并且也得到了明显进步。