行为级DSP算法描述的阵列处理器综合方法研究

本文提出了针对递归DSP算法的高层次系统综合流程,并以脉动(systolic)式处理器阵列结构实现.从DSP算法的FDDL行为级描述开始,经由编译及划分,产生数据相关流图(Data Dependency Graph),然后实现对算法流图的空间映射及时域规划,得到算法的信号流图(Signal Flow Graph),经时序重构,生成脉动阵列,最后实现对处理器单元的数据路径综合及控制器综合,并对处理器单元定位,本文同时提出了各设计阶段的算法策略及优化策略,并给出综合结果。     

High performance CMOS current comparator

A new high-speed CMOS current comparator is described. By changing the buffer of an existing comparator from class B to class AB operation, voltage swings are reduced, resulting in greater speed for small input currents. Simulation results employing a 1.6μm CMOS technology show the response time to a 0.1μA input current to be 11ns and the power dissipation to be 1.4mW, resulting in a five times improvement in speed/power ratio over existing high-speed current comparators     

CAD OF MILLIMETER WAVE OSCILLATORS WITH THE FDHB TECHNIQUE

In this paper the modelling, analysis and optimization of millimeter wave oscillatorsare investigated by using the a frequency-domain harmonic balance technique (FDHB), where theexternal-circuit impedances looking outside from the active device are calculated with a combinedtechnique of modes expansion, Galerkin, and collocation methods. The optimization results arein agreement with the experimental ones, which show the reliability of the presented model andoptimization.     

实时控制中数字量接口的设计与实现

在实时控制中，数字量接口的设计是微计算机应用的一个重要问题，本文从逻辑设计的角度，讨论计算机数字量接口的设计及实现方法。     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source     

1477 nm LD泵浦掺铒光纤放大器的研究

报道了采用１４７７ｎｍ激光二极管（ＬＤ）泵浦的掺铒光纤放大器的实验结果。研究了放大器的增益和时域特性。对１５２０ｎｍ的信号光，获得了２３ｄＢ的增益，泵浦效率为２．２８ｄＢ／ｍＷ。低频脉冲信号经过放大器后未发生波形畸变。     

多功能滚齿机的数字控制系统

本文叙述了以ＳＴＤＰＣ／ＸＴ（或ＰＣ／ＡＴ）机为主要核心构成的滚齿机数字控制系统的结构，软件设计和特点，系统采用混合语言编程，极大地提高了软件设计的灵活性与快速性，也分析了ＣＮＣ系统的加工过程，提出了加工中的软件预处理控制方法，并给出了轴伺服控制的并行算法分析与实现。     

GaP：（N）的背景光谱和发光尖峰

获得高分辨ＧａＰ（Ｎ）光致发光光谱，观察到等电子陷陆束缚激子发光中ＬＯ和ｌｏｃ多声子发射，其强度分布答合泊松分布。将声子伴带区分为直接光跃迁和间接光跃迁，并进行了相应讨论，还观察到局域声子效应－－光谱相似定律和相当显著的背景光谱。     

产生特殊聚焦图形的二元光学元件

通过面积编码将伽博（Gabor)波带片的透过率函数的余弦分布等效为二元分布，研制了能产生各种特殊聚焦图形的二元光学元件。根据透镜聚焦的物理原理制作的二元振幅型波带片可以方便地产生多种聚焦线，给出了相应的实验结果，并讨论了改善聚焦效果的优化条件。     

Ga1-xInxAs/InAsyP1-y/InP异质结的MOCVD生长及表征

Ga1-xInxAs(x>0.53)材料是未来长距离低损耗光纤通信的理想光源材料和探测器材料之一.我们采用水平常压MOCVD系统,在InP衬底上成功地生长了Ga1-xInxAs(x>0.53)/InAsyP1-y/Inp异质结材料.其中InAs1-yPy为组份阶梯变化的多层结构.由样品的(400)面X光衍射结果测定了各层组份.由二次离子质谱(SIMS)得到了样品剖面组份变化结果,证明InAs1-yPy层组份为阶梯状变化的.通过对光致发光结果和X光衍射结果比较,可以看到,InAsyP1-y层通过位错和弹性畸变二种方式来释放或积累Ga1-xInxAs与InP间的失配应力,从而减少了Ga1-xInxAs中的失配位错.有效地改善了Ga1-xInxAs的质量.已获得了x高达0.94表面光亮的Ga1-xInxAs/InAs1-yPy/InP异质结材料.