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41.
The decay process J/ψ→p X X→p P,where p,p and P are the proton,antiproton and pseudoscalar states,respectively,has been studied in terms of the angular distribution and the generalized moment analysis methods.The result shows that we can identify the spin,but cannot determine the parity of the baryon resonance state X produced in the process J/ψ→p X X→p P. 相似文献
42.
This paper has demonstrated that the Schwartz alternating process must converge if D-N alternating process has converged. Its technique is that the overlapping regions in Schwartz alternating process are considered as independent domains, then Schwartz alternating process could be transformed into D-N alter-nating process. Finally the convergence estimation of Schwartz alternating process could be obtained. The results show that its convergence rate is same as that of D-N alternating process. 相似文献
43.
溃坝问题的间断有限元方法 总被引:2,自引:0,他引:2
本文研究90年代初提出的Runge-Kutta间断Galerkin有限元方法,给出该方法的精度分析,通过经典算例验证该方法处理间断问题、捕捉锐利波形的能力,并将其推广到求解浅水问题.针对坝底无摩擦,无坡度的理想情形进行讨论,给出方溃坝和圆溃坝问题的数值模拟结果. 相似文献
44.
45.
Li-Ching Hong Sheng-Jye Hwang 《Components and Packaging Technologies, IEEE Transactions on》2004,27(2):291-295
There were many studies about the prediction of warpage due to thermal mismatch , . However, cure induced warpage is usually ignored and the results can be inaccurate. To minimize this problem, a thorough understanding of epoxy molding compound (EMC) with pressure-volume-temperature-cure (P-V-T-C) relation is necessary. This paper used the P-V-T-C relation of an encapsulation material to formulate the stress-strain relationship. With the help of finite element method (FEM) and mold flow analysis, warpage predictions combined with P-V-T-C relation were performed and the results show that this approach is practical. For a given P-V-T-C relation, the shrinkage direction is pointing toward the gate and maximum warpage usually occurs at the boundary of an integrated circuit (IC) package. Variation of specific volume difference along the flow direction is larger than that perpendicular to the flow direction. When temperature difference is small in thickness direction, specific volume difference in thickness direction varies only slightly. 相似文献
46.
G. Lucovsky J.G. Hong C.C. Fulton N.A. Stoute Y. Zou R.J. Nemanich D.E. Aspnes H. Ade D.G. Schlom 《Microelectronics Reliability》2005,45(5-6):827
This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d* states, which define the optical band gap, Eg, and the conduction band offset energy with respect to crystalline Si, EB. Eg and EB scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices. 相似文献
47.
48.
Chen Q. Hong Y. Chen G. Hill D. J. 《IEEE transactions on circuits and systems. I, Regular papers》2006,53(12):2692-2704
In this paper, one kind of intermittency generated by a discontinuous system is studied. Although this system, which is composed of two switched subsystems coupled with a high strength, is nonsmooth, the mechanism of this kind of intermittency can be analyzed with several explicit relations between the intermittency characteristics and the system control parameters. In particular, estimates of "steady-state" values of the system (in the laminar phases) and a critical value for this intermittency can be derived, which are helpful in relevant control systems design. Moreover, some power laws for the observed intermittency are obtained and discussed 相似文献
49.
Yong Joon Park Min Gyu KimYoung-Sik Hong Xianglan WuKwang Sun Ryu Soon Ho Chang 《Solid State Communications》2003,127(7):509-514
Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2 (X=0.17, 0.25, 0.33, 0.5) compounds are prepared by a simple combustion method. The Rietvelt analysis shows that these compounds could be classified as having the α-NaFeO2 structure. The initial charge-discharge and irreversible capacity increases with the decrease of x in Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2. Indeed, Li[Ni0.50Mn0.50]O2 compound shows relatively low initial discharge capacity of 200 mAh/g and large capacity loss during cycling, with Li[Ni0.17Li0.22Mn0.61]O2 and Li[Ni0.25Li0.17Mn0.58]O2 compounds exhibit high initial discharge capacity over 245 mAh/g and stable cycle performance in the voltage range of 4.8 -2.0 V. On the other hand, XANES analysis shows that the oxidation state of Ni ion reversibly changes between Ni2+ and about Ni3+, while the oxidation state of Mn ion sustains Mn4+ during charge-discharge process. This result does not agree with the previously reported ‘electrochemistry model’ of Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2, in which Ni ion changes between Ni2+ and NI4+. Based on these results, we modified oxidation-state change of Mn and Ni ion during charge-discharge process. 相似文献
50.
Zhen‐Feng Chen Hong‐Li Zhou Hong Liang Yan Li Ren‐Gen Xiong Xiao‐Zeng You 《应用有机金属化学》2003,17(11):883-884
The centrosymmetric binuclear structure of [Pb2(H‐Norf)2(ONO2)4]shows the geometry around each lead(II) atom to be distorted trigonal bipyramidal with Pb–O distances ranging from 2.357(3) to 2.769(4) Å. Copyright © 2003 John Wiley & Sons, Ltd. 相似文献