新工科理念下“扩频通信技术与应用” 课程教学实践

本文以“扩频通信技术与应用”课程为例，探讨新工科理念下工程学科实践教学改革，具体措施包括：开展虚拟仿真实验，充分发挥双师型教师的主观能动性，开展MATLAB仿真训练、工程技术实训及相关的创新创业训练，结合企业实习以及开展国际交流合作等。     

3G用户细分研究

对3G用户的细分方法及3G目标市场的定位进行了初步的研究，提出了3G用户细分的体系框架和3G目标市场定位的考虑要素及初步的定位建议。     

Surface of Ru/Fe2O3 catalysts used in water-gas shift reaction studied by auger electron spectrometry

Summary Carbon deposits on the surface ofRu/Fe₂O₃ catalysts used in the water-gas shift reaction have been investigated by Auger Electron Spectrometry. A correlation has been found between the thickness of the carbon deposit and the catalytic activity in WGSR. The carbon deposit covers the metallic active centers and blocks their contact with reagents. The dotting of the iron oxide support with sodium has been found to reduce the amount of carbon deposit. .      

On the Feasibility of Growing Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 Single Crystals

Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT91/9) single crystals were grown by two methods: from solution using PbO as a self‐fluxing agent (SC method) and directly from the melt without fluxing (MC method). In both growth methods, an allomeric Pb[(Mg_1/3‐Nb_2/3)_0.69Ti_0.31]O₃ (PMNT69/31) single crystal was used as a seed. X‐ray diffraction patterns of ground crystals showed that phase‐pure perovskite PZNT91/9 single crystals were successfully fabricated by the above two methods. The composition of the crystals obtained by both the SC and MC methods was analyzed using X‐ray fluorescence, which confirmed that the crystal composition is close to the nominal value, although volatilization of PbO and segregation during crystal growth are inevitable. The MC PZNT91/9 crystals exhibit excellent piezoelectric properties, with the piezoelectric constant, d₃₃, in the range of 1800–2200 pC N^–1. This value is comparable to that of the SC crystals. However, the MC crystals show an abnormal dielectric behavior. In contrast with the SC crystals, in the MC crystals a much broader dielectric peak appears in the dielectric response curves, accompanied by a much lower peak temperature of around 105 °C. Furthermore, frequency dispersion is apparent over a much wider temperature range (even more apparent than in pure relaxors), where a large, i.e., about 70 °C, full width at half maximum (FWHM) for the dielectric peaks is observed in the dielectric response. It is speculated that such an unusual phenomenon correlates with defects, microinhomogeneities, and polar regions in the as‐grown MC crystals. The origins of this abnormality have not been interpreted in detail until now. However, optical observation of the domain structure confirms that both the SC and MC crystals possess complex structural states.     

Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.     

A decision support system for interactive decision making - Part II: analysis and output interpretation

For pt.I see ibid., p.42-55 (2003). The development of a comprehensive decision support system, GMCR II, for the systematic study of real-world interactive decision problems is presented. The companion paper (Part I), discusses how GMCR II elicits, stores, and manages conflict models; here (Part II), the focus is on GMCR IIs analysis and output interpretation subsystems. Specifically, this paper describes the powerful and efficient analysis engine contained in GMCR II, its informative output presentation and interpretation facilities, and a number of follow-up analyses. Furthermore, an illustrative case study is used to demonstrate how GMCR II can be conveniently applied in practice.     

容灾系统中存储方案选择的研究

论文首先阐述了在容灾系统中存储方案的重要性,讨论了存储方案需要考虑的衡量指标,然后介绍了主要的存储方式,根据衡量指标划分了存储方式的特性范围,最后着重研究了容灾系统中存储方案的选择流程,并使用一个实例说明容灾系统中存储方案的选择流程。     

农村通信如何"突围"

农村通信作为农村地区信息化的基础，对于全面建设小康具有特殊的重要地位。介绍了我国农村通信的发展现状，分析了农村通信发展的困难压其原因，最后对农村压边远、欠发达地区通信的均衡震展提出了一些建议。