Investigation of the source/drain asymmetric effects due to gate misalignment in planar double-gate MOSFETs

A planar double-gate SOI MOSFET (DG-SOI) with thin channel and thick source/drain (S/D) was successfully fabricated. Using both experimental data and simulation results, the S/D asymmetric effect induced by gate misalignment was studied. For a misaligned DG-SOI, there is gate nonoverlapped region on one side and extra gate overlapped region on the other side. The nonoverlapped region introduces extra series resistance and weakly controlled channel, while the extra overlapped region introduces additional overlap capacitance and gate leakage current. We compared two cases: bottom gate shift to source side (DG/spl I.bar/S) and bottom gate shift to drain side (DG/spl I.bar/D). At the same gate misalignment value, DG/spl I.bar/S resulted in a larger drain-induced barrier lowering effect and smaller overlap capacitance at drain side than DG/spl I.bar/D. Because of reduced drain-side capacitance, the speed of three-stage ring oscillator of DG/spl I.bar/S, with 20% gate misalignment length (L/sub mis/) over gate length (L/sub g/), or L/sub mis//L/sub g/=20%, was faster than that of two-gate aligned DG-SOI.     

Algebraic decoding of (103, 52, 19) and (113, 57, 15) quadratic residue codes

In this paper, two algebraic decoders for the (103, 52, 19) and (113, 57, 15) quadratic residue codes, which have lengths greater than 100, are presented. The results have been verified by software simulation that programs in C++ language have been executed to check possible error patterns of both quadratic residue codes.     

High performance laser with nanopatterned active layer by selective area epitaxy

Lasers containing a nanopatterned active layer demonstrating excellent threshold characteristics are presented. The nanopatterned active layer is fabricated using high-resolution electron beam lithography and selective-area metal organic chemical vapour deposition crystal growth. Results demonstrating an order of magnitude improvement over previous results are reported.     

Coding approaches to fault tolerance in linear dynamic systems

This paper discusses fault tolerance in discrete-time dynamic systems, such as finite-state controllers or computer simulations, with focus on the use of coding techniques to efficiently provide fault tolerance to linear finite-state machines (LFSMs). Unlike traditional fault tolerance schemes, which rely heavily-particularly for dynamic systems operating over extended time horizons-on the assumption that the error-correcting mechanism is fault free, we are interested in the case when all components of the implementation are fault prone. The paper starts with a paradigmatic fault tolerance scheme that systematically adds redundancy into a discrete-time dynamic system in a way that achieves tolerance to transient faults in both the state transition and the error-correcting mechanisms. By combining this methodology with low-complexity error-correcting coding, we then obtain an efficient way of providing fault tolerance to k identical unreliable LFSMs that operate in parallel on distinct input sequences. The overall construction requires only a constant amount of redundant hardware per machine (but sufficiently large k) to achieve an arbitrarily small probability of overall failure for any prespecified (finite) time interval, leading in this way to a lower bound on the computational capacity of unreliable LFSMs.     

Self-Adapting Linear Algebra Algorithms and Software

One of the main obstacles to the efficient solution of scientific problems is the problem of tuning software, both to the available architecture and to the user problem at hand. We describe approaches for obtaining tuned high-performance kernels and for automatically choosing suitable algorithms. Specifically, we describe the generation of dense and sparse Basic Linear Algebra Subprograms (BLAS) kernels, and the selection of linear solver algorithms. However, the ideas presented here extend beyond these areas, which can be considered proof of concept.     

High-gain pseudomorphic InGaAs base ballistic hot-electron device

A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In _0.12Ga_0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In_0.12Ga_0.88As was estimated to be about 380 meV     

Comments on "Computer-Assisted Continuous Infusion of the Intravenous Analgesic Fentanyl During General Anesthesia?An Interactive System"

This communication shows an algorithm used in the drug infusion system discussed in a recent paper1 to be incorrect. The error is corrected, and a new algorithm is presented.     

Auditory motivated level-crossing approach to instantaneous frequency estimation

We address the problem of estimating the instantaneous frequency (IF) of a phase signal using its level-crossing (LC) information based on front-end auditory processing motivation. We show that the problem of IF estimation using LC information can be cast in the framework of estimation from irregularly sampled data. The formulation has the generality of estimating different types of IF without the need for a quasistationary assumption. We consider two types of IF-polynomial and bandlimited; we use polynomial interpolating functions for the former, and for the latter, we propose a novel "line plus sum of sines" model. The model parameters are estimated by linear regression. Considering the noisy case, LC data for different levels is analyzed, and methods for combining different estimators from LCs are discussed. Theoretical and extensive simulation results show that the performance of the zero-crossing (ZC) based IF estimator and the level-crossing based IF estimator with smaller level values is better than those obtained with higher level values or their combinations. The new technique reaches the Crame/spl acute/r-Rao bound (CRB) roughly above 4 dB signal-to-noise ratio (SNR), and its performance does not deteriorate rapidly with mismatch in the IF order compared with the other techniques in the literature.     

A robust detector for multicarrier spread spectrum transmission over partially jammed channels

Multicarrier spread spectrum (MC-SS) is an alternative to the conventional spread spectrum (SS) techniques that behave significantly better when the system is subject to narrow- or partial-band interference. However, successful implementation of the optimum detector requires knowledge of noise and interference variance in each subcarrier band. We propose a suboptimal detector for MC-SS that keeps the significant gain of MC-SS over the conventional SS, with a relatively low loss compared with the optimum MC-SS detector. Theoretical analysis and computer simulations that corroborate the theory are presented.