The Monitoring System Using FOBG Sensor for The Health of the Rocket

A novel heath monitoring system of the rocket based on fiber optic Bragg gratings is brought forward, its component units and working principle are also described.     

丽音（NICAM）双伴音／立体声电视广播技术

本文首先介绍了电视双伴音/立体声广播的几种常用方式,然后着重分析丽音(NICAM)双伴音/立体声广播系统的基本原理,并给出其接收系统的集成电路。     

Characteristic of a broadband Ti:LiNbO3 optical modulator with buried electrodes and etched grooves in the buffer layer

Traveling wave Ti:LiNbO₃ Mach-Zehnder optical modulators with buried electrodes and etched grooves in the SiO₂ buffer layer are analyzed by the finite element method. The tradeoff between the bandwidth BW and the half-wave voltage Vπ is discussed. The value of BW/Vπ is used to weight the total performance of the modulator. Taking a thick buffer layer and etching deep grooves in the buffer layer are demonstrated as two effective methods to improve the performance of the modulator. A 3-dB optical bandwidth of 18 GHz with half-wave voltage 5V at a wavelength of 1.55 pm could be obtained even though the electrode is not very thick. When the requirement of half-wave voltage is not very critical, a bandwidth of more than 100 GHz can be obtained.     

过共晶Al－Si合金共生区激光表面处理

用２ｋＷ连续ＣＯ２激光对过共晶Ａｌ－１８Ｓｉ合金以不同能量密度和扫描速度进行快速熔凝处理。用扫描电镜、电子微区分析仪分析了微观结构。从计算机对Ａｌ－Ｓｉ合金ｆ－ｎｆ系统的非平衡理论计算所得的共生区及实验结果的分析可见，当能量密度和扫描速度决定的凝固条件处于共生区中部时，过共晶Ａｌ－Ｓｉ合金激光表面处理可以得到共晶间距低于２００ｎｍ的完全共晶结构。     

Tri-band frequency selective surface with circular ring elements

Theoretical analysis, physical reasonings, and experimental verifications are presented for a frequency selective surface with circular ring elements. Both double-screen and single-screen designs are generated for a tri-band system that reflects the X-band signal while transmitting through the S- and Ku-band signals. In these designs, the dielectric loading effect is used to reduce ring size and element spacing and thus avoid the grating lobe problem. The circular ring element is very insensitive to a large variation of the RF incident angle     

基于GIS技术的安徽省重大农业气象灾害测评系统总体设计

对《基于GIS技术的安徽省重大农业气象灾害测评系统》的总体设计方法作了概要介绍。该系统的建立主要是采用GIS技术，综合气候分析、遥感监测、地理环境影响评判等方法，提高对安徽省干旱、洪涝、低温冻害等重大农业气象灾害实时监测、趋势预测，以及对农业生产影响的分析评价结果的准确性。     

解线性及二次型规划问题增广的神经网络

本文提出了一个解线性及二次型规划问题的神经网络模型，证明了该网络是全局稳定于平衡点，而平衡点就是线性及二次型规划问题的解，该网络的优点是能够实时获得问题的精确解，且可以同时获得带等式不式约束的对偶问题解，该网络易于电路实现。     

An efficient numerical approach, for determining the dispersioncharacteristics of dual-mode elliptical-core optical fibers

Based on vectorial formulations which combine the surface integral equation method and the finite-element method, a novel numerical approach is proposed for calculating the dispersion coefficients of dual-mode elliptical-core fibers with arbitrary refractive index profiles. By differentiating the original formulations involving the propagation constant β and the guided mode fields H_x and H_y once and twice with respect to the normalized frequency V, the new formulations for {dβ/dV, dH_x/dV, dH_y/dV} and for {d²β/dV², d² H_x/dV², d²H_y/dV² } are obtained respectively. Once {β, H_x, H_y } is solved through the eigenvalue procedure which dominates the computing time, only a few matrix manipulations are required to obtain {dβ/dV, dH_x/dV, dH_y/dV} and {d²β/dV², d²H_x/dV² , d²H_y/dV²}. Some numerical examples are examined to see the influence of different refractive index distributions with dips on the dispersions of the four nondegenerate LP ₁₁ modes for elliptical-core fibers     

A new simplified threshold-voltage model for n-MOSFETs with nonuniformly doped substrate and its application to MOSFET's miniaturization

The formulation, verification, and application of a new simplified 2-D threshold voltage model for n-MOSFETs with nonuniformly doped substrate profile are provided, in which the averaged normal field at the Si/SiO/sub 2/ interface in the active channel is quoted from a simplified solution of two-dimensional Poisson equation using the Green function technique. Starting with the expression of this average normal field, a simple threshold-voltage model for short-channel n-MOSFETs with nonuniformly doped substrate profile is explicitly expressed in terms of device structures and terminal voltages by considering parabolic source-drain boundary potentials. Moreover, the effects of the junction depth on the threshold voltage are examined in detail. It is shown that the DIBL effect cannot be completely eliminated by simply increasing the substrate doping concentration. Comparisons among developed model, 2-D numerical analysis, and experimental data have been made and the accuracy of the developed analytical model has been verified. In addition, a direct extension of our model to the case of uniformly doped substrates leads to a new constraint equation for device miniaturization.<>     

MOSFET亚阈特性分析与低温按比例缩小理论的研究

器件尺寸按比例缩小是实现超大规模集成电路的有效途径，但寄生和二级效应却将器件限在一定的水平，本文在对比分析常温与低温下小尺寸器件效应的基础上，重点研究了ＭＯＳ器件亚阈特性对器件性能及按比例缩小的影响，并根据低温工作的特点，提出了ＭＯＳ器件一种低温按比例缩小规则，该原则对低温器的优化设计，从而更大程度在提高电路与系统性能具有重要的指导意义。