Bendable and Splitter-Integrated Optical Subassembly Based on a Flexible Optical Board

A bendable and splitter-integrated optical subassembly (OSA) is suggested as a short-distance board-to-board optical interconnection. This OSA was fabricated by simply packaging a vertical-cavity surface-emitting laser on a flexible optical board having an embedded 1 $times$ 8 optical splitter waveguide. Finally, we measured various optical characteristics of the OSA, including insertion, twist, and bending losses.      

High-Efficiency Blue Emitting Phosphorescent OLEDs

In this paper, we will show our latest results on high-efficiency blue phosphorescent organic light-emitting diodes (PHOLEDs). Effects of triplet exciton confinement, exciton energy transfer and charge trapping, and charge balance on iridium(III)bis [(4,6-di-fluorophenyl)-pyridinato-N,C2'] picolinate (FIrpic)-based blue PHOLEDs will be presented. By optimizing the aforementioned device parameters, a high-efficiency blue PHOLED with 59 cd/A (48 lm/W at 100 cd/m²) was demonstrated.     

Identifying the structure of group correlation in the Korean financial market

We investigate the structure of the cross-correlation in the Korean stock market. We analyze daily cross-correlations between price fluctuations of 586 different Korean stock entities for the 6-year time period from 2003 to 2008. The main purpose is to investigate the structure of group correlation and its stability by undressing the market-wide effect using the Markowitz multi-factor model and the network-based approach. We find the explicit list of significant firms in the few largest eigenvectors from the undressed correlation matrix. We also observe that each contributor is involved in the same business sectors. The structure of group correlation can not remain constant during each 1-year time period with different starting points, whereas only two largest eigenvectors are stable for 6 years 8-9 eigenvectors remain stable for half-year. The structure of group correlation in the Korean financial market is disturbed during a sufficiently short time period even though the group correlation exists as an ensemble for the 6-year time period in the evolution of the system. We verify the structure of group correlation by applying a network-based approach. In addition, we examine relations between market capitalization and businesses. The Korean stock market shows a different behavior compared to mature markets, implying that the KOSPI is a target for short-positioned investors.     

Dual signaling of m-chloroperbenzoic acid by desulfurization of thiocoumarin

The chemosignaling of widely used peracid oxidant of m-chloroperbenzoic acid (mCPBA) by the selective desulfurization of thiocoumarin was investigated. Thiocoumarin was efficiently converted into its corresponding coumarin by the reaction with mCPBA, and resulted in a pronounced fluorescent turn-on type signaling. The conversion also provided a significant change in absorption behavior which allowed a ratiometric analysis. The effective signaling could be used as a convenient determination method for mCPBA in aqueous environment.     

Small-signal substrate resistance effect in RF CMOS cascode amplifier

With common-source RF application amplifier, it is well known that the small substrate resistance helps to improve the output resistance as well as the transconductance. This idea can be easily extended to all CMOS transistors in RF applications. However, with cascode amplifier at high frequencies, the maximum available gain, noise figure minimum, and the tuned output impedance are improved by increasing the substrate resistance of the common-gate transistor, so that the range of operational frequency can be extended. These contradicting phenomenons between the common-source and common-gate topology can be explained theoretically, and the supporting measurement results are presented base on a 0.35 /spl mu/m CMOS technology.     

The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

An Fe-doped GaN buffer layer was employed in the growth of AlGaN/GaN high-electron mobility transistors (HEMTs) on Si substrates. In order to investigate the effects of an Fe-doped GaN buffer on OFF-state breakdown characteristics, HEMT devices with an Fe-doped GaN buffer on Si substrates were fabricated along with conventional devices utilizing an unintentionally doped GaN buffer on Si substrates. The device characteristics were compared. While HEMT devices with the conventional structure showed an extremely unstable OFF-state breakdown behavior due to punchthrough to the Si substrate, it was demonstrated that an Fe-doped GaN buffer layer on a Si substrate successfully suppressed the premature failure caused by Si-induced breakdown. As a result, the AlGaN/GaN HEMTs with an Fe-doped GaN buffer on Si substrates exhibited much more consistent and enhanced breakdown voltages, when compared with the conventional devices. Consequently, it is highly desirable that AlGaN/GaN HEMTs on Si substrates have an Fe-doped GaN buffer layer in order to achieve stable and robust OFF-state breakdown characteristics     

大型火箭起飞横向漂移测量系统研究

本文论及了大型火箭发射起飞段横向漂移量的近距离高速摄影测量系统和数据处理方法。     

直流电机的数字同步锁相

在某高速摄影机中,我们采用了同步数字锁相环路,本文叙述该机中直流电机的数字同步锁相原理及其所用数字相位误差积分器线路的构成。