Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

Ultrahigh and controllable drain current peak-to-valley ratio innegative resistance field-effect transistors with a strained InGaAschannel

Negative resistance field-effect transistor (NERFET) devices using either strained InGaAs or unstrained GaAs channel layers have been fabricated. The strained InGaAs channel NERFET's show strong negative differential resistance and large drain current peak-to-valley ratio. The peak-to-valley ratio of the InGaAs channel NERFET is more than 3000 at room temperature and larger than one million (10⁶) at 77 K. The peak-to-valley ratio is controllable by adjusting the collector voltage     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied     

Integration of mobile vehicles for automated material handlingusing Profibus and IEEE 802.11 networks

This paper focuses on a method to integrate mobile devices such as a mobile robot, automated guided vehicle, and unmanned container transporter to form an automated material handling system. In this paper, the stationary devices are connected via a Profibus network while the mobile devices are communicating via an IEEE 802.11 wireless LAN. In order to integrate these two networks, a protocol converter is developed on a PC platform that runs two interacting processes with shared internal buffers. The protocol converter performs a role of translator between two different protocols by converting the format of a data frame. In addition to this basic conversion function, the protocol converter has a virtual polling algorithm to reduce the uncertainty involved in accessing the wireless network. Finally, the integrated network. of Profibus and IEEE 802.11 is experimentally evaluated for its data latency and throughput, which shows the feasibility of the Profibus-IEEE 802.11 network for industrial applications involving mobile devices     

Metal-semiconductor-metal photodetectors with InAlGaP capping and buffer layers

To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In/sub 0.5/(Al/sub 0.66/Ga/sub 0.34/)/sub 0.5/P, for the capping and buffer layers. We directly evaluated the Schottky contact parameters on the MSM-PD structure. The reverse characteristics of the Schottky contacts were examined by taking into account the Schottky barrier height depended on the electric field in the depletion region, and hence on the applied bias. The ideality factor and Schottky barrier height of Ti-Pt-Au contacts to In/sub 0.5/(Al/sub 0.66/Ga/sub 0.34/)/sub 0.5/P are 1.02 and 1.05 eV, respectively. Extremely low dark currents of 70 and 620 pA were obtained for these MSM-PDs when they were operated at a reverse bias of -10 V at room temperature and at 70/spl deg/C, respectively.     

Towards understanding the increase in strength of thermotropic polyesters with heat treatment

Thermotropic copolyester fibers of oxynaphthoate and oxybenzoate have been subjected to conditions that promote solid-state polymerization as well as annealing. The annealing process causes the crystals to perfect with a simultaneous increase in heat of fusion and melting temperature. Solid-state polymerization, a reaction rate-controlled process, causes the polymer viscosity average molecular weight to increase by chain extension from about 14,000 g/mole to more than 87,000 g/mole with a simultaneous impressive increase in tenacity from about 10 g/d (1.2 GPa) to almost 30 g/d (3.7 GPa). To understand the changes in mechanical properties, we have modeled the fiber structure as short rod-like molecules poorly bonded to a continuous matrix of parallel molecules. Lengthening of the reinforcing molecules facilitates better transfer of load from matrix to molecules, resulting in higher tenacity fibers. © 1994 John Wiley & Sons, Inc.     

Electrical and optical feedback in an InGaAs/InP light-amplifyingoptical switch (LAOS)

A circuit model for optical and electrical feedback has been developed to investigate the cause of negative differential resistance (NDR) switching in a series connected heterojunction phototransistor (HPT) light-emitting diode (LED) device. The model considers optical feedback from the light generated in the LED, electrical feedback from the holes thermally emitted over the LED cladding layer, nonlinear gain of the HPT, the Early effect, and leakage resistance. The analysis shows that either electrical or optical feedback can be the dominant cause for the NDR, depending upon their relative strengths. The NDR observed in the devices was caused primarily by electrical feedback since the optical feedback is weak. For low input power, avalanche breakdown appears to initiate the NDR in the devices although avalanching alone cannot cause NDR     

Study on Contamination Control for Yield Enhancement in the Manufacturing Line of Cellular Phone Modules

Practical studies on the method of contamination control for yield enhancement in the cellular phone modules production line were carried out. A contamination control method was proposed, consisting of data collection, data analysis, improvement action, verification, and implementation of control. The partition check method and the composition analysis for data collection and data analysis were respectively used in the cellular phone modules manufacturing process, and these methods were evaluated by the variation of yield loss before and after implementing the actions for improvement. In the partition check method, the critical process step was selected, and yield loss reduction through improvement actions was observed, whereas in the composition analysis, critical sources were selected, and yield loss reduction through improvement actions was investigated. From the results, it is concluded that the partition check and the composition analysis are effective solutions for contamination control in cleanroom production lines.