Development of 5-[(3-aminopropyl)phosphinooxy]-2-(hydroxymethyl)-4H-pyran-4-one as a novel whitening agent

A stable derivative of kojic acid, 5-[(3-aminopropyl)phosphinooxy]-2-(hydroxymethyl)-4H-pyran-4-one (Kojyl-APPA), was synthesized in good yield. The effects of Kojyl-APPA on tyrosinase activity and melanin synthesis were investigated. Kojyl-APPA showed tyrosinase inhibition effect (30%) in situ, but not in vitro. Kojyl-APPA inhibited tyrosinase activity significantly at 24 h after treatment in normal human melanocytes. It means that Kojyl-APPA is not a direct inhibitor of tyrosinase itself, but it is converted to a potential inhibitor kojic acid enzymatically in cells. In addition, Kojyl-APPA decreased melanin content to 75% of control in melanoma cells and decreased neomelanin synthesis to 43% of control in normal human melanocytes. Its permeation through skin increased by about 8 times as compared with kojic acid.     

A 36 fps SXGA 3-D Display Processor Embedding a Programmable 3-D Graphics Rendering Engine

In this paper, a 3D display processor embedding a programmable 3D graphics rendering engine is proposed. The proposed processor combines a 3D graphics rendering engine and a 3D image synthesis engine to support both true realism and interactivity for the future multimedia applications. Using high coherence between 3D graphics data and 3D display inputs, both pipelines are merged by sharing buffers such that a 3D display engine directly uses the output of a 3D graphics rendering engine. The merged architecture has synergetic coupling effects such as freely providing various rendering effects to 3D images and easily computing disparities without complex extraction processes. In the 3D image synthesis engine, we adopt view interpolation algorithm and propose real-time synthesis method, pixel-by-pixel process. The view interpolation algorithm reduces the number of images to be rendered, resulting in the reduction of external memory size to 64.8% compared to conventional synthesis process. The proposed pixel-by-pixel process synthesizes 3D images at 36 fps through bandwidth reduction of 26.7% and decreases internal memory size to 64.2% compared to typical image-by-image process. The 3D graphics rendering engine is programmable and supports the instruction sets of the latest 3D graphics standard APIs, Pixel Shader 3.0 and OpenGL|ES 2.0. The die contains about 1.7 M transistors, occupies 5 mm times 5 mm in 0.18 mum CMOS and dissipates 379 mW at 1.85 V.     

Relationship between ganglioside expression and anti-cancer effects of the monoclonal antibody against epithelial cell adhesion molecule in colon cancer

The human colorectal carcinoma-associated GA733 antigen epithelial cell adhesion molecule (EpCAM) was initially described as a cell surface protein selectively expressed in some myeloid cancers. Gangliosides are sialic acid-containing glycosphingolipids involved in inflammation and oncogenesis. We have demonstrated that treatment with anti-EpCAM mAb and RAW264.7 cells significant inhibited the cell growth in SW620 cancer cells, but neither anti-EpCAM mAb nor RAW264.7 cells alone induced cytotoxicity. The relationship between ganglioside expression and the anti- cancer effects of anti-EpCAM mAb and RAW264.7 was investigated by high-performance thin-layer chromatography. The results demonstrated that expression of GM1 and GD1a significantly increased in the ability of anti-EpCAM to inhibit cell growth in SW620 cells. Anti-EpCAM mAb treatment increased the expression of anti-apoptotic proteins such as Bcl-2, but the expression of pro-apoptotic proteins Bax, TNF-α, caspase-3, cleaved caspase-3, and cleaved caspase-8 were unaltered. We observed that anti-EpCAM mAb significantly inhibited the growth of colon tumors, as determined by a decrease in tumor volume and weight. The expression of anti-apoptotic protein was inhibited by treatment with anti-EpCAM mAb, whereas the expression of pro-apoptotic proteins was increased. These results suggest that GD1a and GM1 were closely related to anticancer effects of anti-EpCAM mAb. In light of these results, further clinical investigation should be conducted on anti-EpCAM mAb to determine its possible chemopreventive and/or therapeutic efficacy against human colon cancer.     

Vibration suppression of a cantilever beam using magnetically tuned-mass-damper

Eddy currents are induced by the movement of a conductor through a stationary magnetic field or a time varying magnetic field through a stationary conductor. These currents circulate in the conductive material and are dissipated, causing a repulsive force between the magnet and the conductor. These electromagnetic forces can be used to suppress the vibrations of a flexible structure. A tuned mass damper is a device mounted in structures to reduce the amplitude of mechanical vibrations and is one of the effective vibration suppression methods. In the present study, an improved concept of this tuned mass damper for the vibration suppression of structures is introduced. This concept consists of the classical tuned mass damper and an eddy current damping. The important advantages of this magnetically tuned mass damper are that it is relatively simple to apply, it does not require any electronic devices and external power, and it is effective on the vibration suppression. The proposed concept is designed for a cantilever beam and the analytical studies on the eddy current damping and its effects on the vibration suppression. To show the effectiveness of the proposed concept and verify the eddy current damping model, experiments on a cantilever beam are performed. It is found that the proposed concept could significantly increase the damping effect of the tuned mass damper even if not adequately tuned.     

Scaling of SiGe Heterojunction Bipolar Transistors

Scaling has been the principal driving force behind the successful technology innovations of the past half-century. This paper investigates the impacts of scaling on SiGe heterojunction bipolar transistors (HBTs), which have recently emerged as a strong contender for RF and mixed-signal applications. The impacts of scaling on key performance metrics such as speed and noise are explored, and both theory and data show that scaling, both vertical and lateral, has mostly beneficial effects on these metrics. However, it is shown that the scaled devices are increasingly vulnerable to device reliability issues due to increased electric field and operation current density. Bipolar transistor scaling rules are reviewed and compared with accumulated reported data for verification. A review of scaling limits suggests that bipolar scaling has not reached the physical fundamental limit yet, promising a continued improvement of bipolar performance in the foreseeable future.     

Effect of Printed Circuit Board Structures on Temperature-Dependent Gain Characteristics of RF Power Amplifier Chips

We fabricated and characterized heterojunction field effect transistor radio frequency (RF) power amplifier (PA) test fixtures, for wireless applications, with various printed circuit board (PCB) structures. The RF matching and bias circuits of the test fixtures were designed so that they had the same RF characteristics. The only source of the variation of the RF gain (S₂₁) was different thermal characteristics of each PCB. The values of the junction temperature (T_J) and the junction-to-ambient thermal resistance (R _{J A}) of each test fixture were shown to be changed as much as 80deg C and 30deg C / W, respectively, by the change of PCB structures. The change of Rja was shown to be originated from the change of the PCB thermal resistance, assuring that the structure of the PCB was the dominant factor in determining R _{J A} Finally, we obtained a universal relation between S₂₁ of the amplifier and Tj. This work suggests that thermal budget of PCB is as important as that of package in wireless RF equipments.     

Analytical model and characterization of abnormally structured MOSFETs

Electrical characteristics of abnormally structured n-MOSFETs having uncontacted active regions are experimentally investigated using test devices with various gate widths. Linear resistance and saturation drain current of the devices are estimated by a simple schematic model, which consists of parallel-connected conventional devices having parasitic resistors. A comparison of experimental results of conventional and abnormal devices gives the parasitic resistance caused by abnormal active structure. The increment rate of the parasitic resistance depending on gate width shows two categories, which are logarithmic increment at narrow device and exponential increment at wider device. The performance degradation in the wider device is also explained by the reduction of effective channel area. The suggested model provides a physical analysis of the abnormal transistor and shows good agreement with the measured drain current in linear and saturation regions for both forward- and reverse-modes.     

40-Gb/s circuits built from a 120-GHz f/sub T/ SiGe technology

Product designs for 40-Gb/s applications fabricated from SiGe BiCMOS technologies are now becoming available. In this paper we first briefly discuss heterojunction bipolar transistor (HBT) device operation at high speed, demonstrating that perceived concerns regarding lower BV/sub CEO/ and higher current densities required to operate silicon HBTs at such high speeds do not in actuality limit design or performance. The high-speed portions of the 40-Gb/s system are then addressed individually. We demonstrate the digital capability through a 4: 1 multiplexer and a 1 : 4 demultiplexer running over 50 Gb/s error free at a -3.3-V power supply. We also demonstrate a range of analog elements, including a lumped limiting amplifier which operates with a 35-GHz bandwidth, a transimpedance amplifier with 220-/spl Omega/ gain and 49.1-GHz bandwidth, a 21.5-GHz voltage-controlled oscillator with over -100-dBc/Hz phase noise at 1-MHz offset, and a modulator driver which runs a voltage swing twice the BV/sub CEO/ of the high-speed SiGe HBT. These parts demonstrate substantial results toward product offerings, on each of the critical high-speed elements of the 40-Gb/s system.     

Vibrational spectroscopy of ordered oxygen adiayers on Ni/Cu(001) and Co/Cu(001) thin film systems

We report surface vibrations in c(2 × 2) oxygen adlayers on Ni and Co thin films on a Cu(001) substrate measured at gG by high resolution EELS. For the Ni thin film surface, one phonon peak is measured for varying film thicknesses from 1.3 ML (monolayer) to 6 ML with a constant energy of 221 cm⁻¹. For the Co thin film surface, three loss peaks are found, whose relative intensities change as the film thicknesses are varied. One loss peak at ˜520 cm⁻¹ is tentatively assigned to the Fuchs-Kliewer mode of cobalt oxide (CoO). The other two peaks at 317 and 376 cm⁻¹ are likely related to different bonding sites. Surface phonons on the p(2 × 2) Co thin film (389 cm⁻¹) and a bulk resonance mode (115 cm⁻¹) are also reported.