Vertical bridgman techniques to homogenize zinc composition of CdZnTe substrates

In order to improve the Zn homogeneity along the axial direction of CdZnTe boule, we have employed a modified Bridgman technique using a (Cd, Zn) alloy source in communication with the melt, whose temperature has been gradually changed from 800 to 840°C during growth. Electron probe microanalysis (EPMA) measurements of Zn composition in the boule shows an excellent homogeneity of Zn along the axis of the CdZnTe boule compared with results in a boule grown by using a fixed source temperature. We have performed a numerical simulation to obtain the approximate temperatures of additional heating and cooling needed to improve the radial Zn homogeneity. CdZnTe boule has been grown by seeded vertical Bridgman furnace with two zones of heater and cooler. Ultraviolet/visible spectroscopic measurements of Zn composition over the length of the boule indicate that the radial distribution of Zn composition is very homogeneous in the body region of the boule, where the radial variation of Zn composition is ±0.0005.     

2.488 Gb/s-318 km repeaterless transmission using erbium-dopedfiber amplifiers in a direct-detection system

The authors have achieved a 2.488 Gb/s, 318 km repeaterless transmission without any fiber dispersion penalty through a nondispersion-shifted fiber in a direct detection system. The system was loss limited with a T-R power budget of 57 dB. Three key components enabled the authors to achieve this result: (1) a Ti:LiNbO₃ external amplitude modulator enabling a dispersion-free transmission, (2) erbium-doped fiber amplifiers increasing the transmitting power to +16 dBm, and (3) an erbium-doped fiber preamplifier enabling a high-receiver sensitivity of -4.1 dBm for 10^-9 BER. To the author's knowledge, this result is the longest repeaterless transmission span length ever reported for direct detection at this bit rate. From the experimental results and a theoretical model, the authors identified the sources of the receiver sensitivity degradation from the quantum limit (-48.6 dBm) and estimated the practically achievable receiver sensitivity of ~-44 dBm (~-124 photons/bit) for 2.5 Gb/s optical preamplifier detection     

Novel fast training algorithm for multilayer feedforward neural network

A new fast learning algorithm for a multilayer feedforward neural network is presented. The new algorithm, based on an innovative variable step size and gradient averaging, has excellent properties to overcome major drawbacks of the backpropagation algorithm and shows high convergence speed. The improved performance of new algorithm in comparison with other algorithms is verified via computer simulations.<>     

Monte Carlo simulation of boron implantation into single-crystalsilicon

An improved Monte Carlo simulation model has been developed for boron implantation into single-crystal silicon. This model is based on the Marlowe Monte Carlo code and contains significant improvements for the modeling of ion implantation, including a newly developed local electron concentration-dependent electronic stopping model and a newly developed cumulative damage model. These improvements allow the model to reliably predict boron implant profiles not only as a function of energy, but also as a function of other important implant parameters such as tilt angle, rotation angle, and dose. In addition, profiles of implant generated point defects (silicon interstitials and vacancies) can be calculated     

A novel optical bistable multiple-quantum-well phase modulator

The authors present a new type of optically bistable phase modulator utilizing a self electrooptic effect device (SEED) integrated with an electrooptic wavelength modulator. An electrically bistable SEED, operating on the principle of the quantum-confined Stark effect, controls the bias voltage across an electrooptic waveguide phase modulator to produce optical bistability. A control signal at 0.848 μm, corresponding to the first electron to heavy hole exciton transition in GaAs/AlGaAs multiple-quantum-well is used to switch 1.152 μm light propagating through a waveguide in a direction normal to the control beam     

Highly stable optical add/drop multiplexer using polarization beam splitters and fiber Bragg gratings

We demonstrate a novel wavelength-division add/drop multiplexer employing fiber Bragg gratings and polarization beam splitters. The multiplexer is easy to fabricate without any special technique such as UV trimming, and yet shows very stable performance with less than 0.3-dB crosstalk power penalty in a 0.8-nm-spaced, 2.5-Gb/s-per-channel wavelength-division multiplexing (WDM) transmission system.     

Analysis and prevention of DRAM latch-up during power-on

The occasional power-on latch-up phenomenon of DRAM modules with a data bus shared by multiple DRAM chips on different modules was investigated and the circuit techniques for latch-up prevention were presented. Through HSPICE simulations and measurements, the latch-up triggering source was identified-to be the excessive voltage drop at the n-well pick-up of the CMOS transmission gate of read data latch circuit due to the short-circuit current which flows when the bus contention occurs during power-on. By extracting the HSPICE Gummel-Poon model parameters of the parasitic bipolar transistors of DRAM chips from the measured I-V and C-V data, HSPICE simulations were performed for the power-on latch-up phenomenon of DRAM chips. Good agreements were achieved between measured and simulated voltage waveforms. In order to prevent the power-on latch-up even when the control signals (RAS, GAS) do not track with the power supply, two circuit techniques were presented to solve the problem. One is to replace the CMOS transmission gate by a CMOS tristate inverter in the DRAM chip design and the other is to start the CAS-BEPORE-RAS (CBR) refresh cycle during power-on and thus disable all the Dout buffers of DRAM chips during the initial power-on period     

Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers

V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by, combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (t/sub p-CBL/), and a doping concentration (n/sub p-CBL/) of the p-GaAs current-blocking layer (CBL) were determined to be W=1.2 /spl mu/m, t/sub p-CBL/=2 /spl mu/m, and n/sub p-CBL/=1/spl times/10/sup 18/ cm/sup -3/. The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.     

Polymeric 2/spl times/2 electrooptic switch consisting of asymmetric Y junctions and Mach-Zehnder interferometer

2/spl times/2 electrooptic switches consisting of a pair of asymmetric Y junctions and Mach-Zehnder interferometer have been demonstrated in polymeric waveguides. The switching voltage is 15 V with 1.5 cm long electrode for TM polarized light at 1.3 /spl mu/m. When the branching angle of the asymmetric Y junction is 0.2/spl deg/, crosstalk of -27 to -22 dB are obtained for both input arms. The measured insertion loss by the lens coupling is about 9-10 dB.     

Hierarchically Ordered Polymer Films by Templated Organization of Aqueous Droplets

Hierarchically ordered structures facilitate the incorporation of diverse functions simultaneously. The present report introduces a simple and novel strategy for producing hierarchically ordered polymeric films. Hierarchical ordering of aqueous droplets on a polymer solution is realized by the imposition of physical confinement via various shaped gratings. After drying of the solution, well‐ordered hierarchical structures were fabricated in the remaining polymer film. The size of the grating structure and the lattice size of spontaneous hexagonally packed aqueous pores comprise two different length scales, thereby offering multiscale ordering. Interfacial wetting of the polymer solution to the grating surface was crucial in terms of obtaining a highly ordered structure that can be tuned by dissolving a small amount of surfactant in the polymer solution. The present novel approach provides a new opportunity for lithography‐free fabrication of complex hierarchical structures.