Self-aligned offset gated poly-Si TFTs with a floating sub-gate

We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained     

Generation of 0.2-TW 5.5-fs optical pulses at 1 kHz using a differentially pumped hollow-fiber chirped-mirror compressor

Optical pulses with 1.1-mJ energy and 5.5-fs duration have been generated at 1-kHz repetition rate from a chirped pulse amplification Ti:Sapphire laser incorporating a differentially pumped hollow-fiber chirped-mirror compressor. The effects of self-focusing and multi-photon ionization during the beam propagation were minimized by differentially pumping the hollow fiber filled with neon. The spectral broadening at the hollow-fiber compressor was optimized by adjusting gas pressure, laser intensity, and laser chirp, covering from 540 nm to 950 nm. PACS 42.65.Jx; 42.65.Re     

A 4-MB on-chip L2 cache for a 90-nm 1.6-GHz 64-bit microprocessor

A 4-MB L2 data cache was implemented for a 64-bit 1.6-GHz SPARC(r) RISC microprocessor. Static sense amplifiers were used in the SRAM arrays and for global data repeaters, resulting in robust and flexible timing operation. Elimination of the global clock grid over the SRAM array saves power, enabled by combining the clock information with array select signals. Redundancy was implemented flexibly, with shift circuits outside the main data array for area efficiency. The chip integrates 315 million transistors and uses an 8-metal-layer 90-nm CMOS process.     

A four-channel 3.125-Gb/s/ch CMOS serial-link transceiver with a mixed-mode adaptive equalizer

This work presents a quad-channel serial-link transceiver providing a maximum full duplex raw data rate of 12.5Gb/s for a single 10-Gbit eXtended Attachment Unit Interface (XAUI) in a standard 0.18-/spl mu/m CMOS technology. To achieve low bit-error rate (BER) and high-speed operation, a mixed-mode least-mean-square (LMS) adaptive equalizer and a low-jitter delay-immune clock data recovery (CDR) circuit are used. The transceiver achieves BER lower than <4.5/spl times/10/sup -15/ while its transmitted data and recovered clock have a low jitter of 46 and 64 ps in peak-to-peak, respectively. The chip consumes 178 mW per each channel at 3.125-Gb/s/ch full duplex (TX/RX simultaneous) data rate from 1.8-V power supply.     

Synthesis of poly-substituted nitrobenzene derivatives from Baylis-Hillman adducts via [3+3] annulation protocol

Poly-substituted nitrobenzenes were synthesized from Baylis-Hillman adducts via the [3+3] annulation strategy as the key step. 1,3-Dinitroalkanes served as the 1,3-dinucleophilic component and the Baylis-Hillman acetates as a 1,3-dielectrophilic part.     

Photoswitching of holographic polymer-dispersed liquid crystals doped with chiral dopant

Chiral dopants were added to the formulation of holographic polymer-dispersed liquid crystals and the effects studied in terms of grating formation dynamics, morphology, diffraction efficiency, contrast ratio and electro-optical properties of the films. A gradual increase of real-time diffraction efficiency, decrease of droplet size and increase of diffraction efficiency of the composite film were obtained with the addition and increasing content of chiral dopant, due to the increased viscosity of the liquid crystal (LC) doped with the chiral dopant leading to decreased droplet coalescence. The contrast ratio decreased with increasing content of chiral dopant due to the difficult orientation of LC molecules caused by the formation of a helical structure. Addition of a small amount of the chiral dopant increased the driving voltage slightly, whereas the decay time is decreased significantly as a result of the high twisting of the helical structure.     

Fabrication of high current and low profile micromachined inductorwith laminated Ni/Fe core

A new process for the fabrication of high current and very low profile micromachined inductors has been developed. This process involves the combination of mechanical lamination and electrodeposition of copper windings by means of LIGA-like lithography through thick epoxy photoresists. The dimension of the fabricated inductor is 16 mm×19 mm×1 mm. The fabricated inductor has an inductance value of 1.2 μH with DC saturation current of 3 A and an electrical resistance of less than 30 mΩ at 10 kHz     

A novel phase noise reduction technique in oscillators usingdefected ground structure

A new technique to reduce the phase noise in microwave oscillators is developed using the resonant characteristic of the defected ground structure (DGS). Two kinds of oscillators have been designed and measured for the examination of the reduction of phase noise by the DGS. The first adopts the DGS section under the microstrip line at the gate circuit, while the second has only the conventional microstrip line. Measurement shows reduced phase noise by 10-15 dB in the oscillator with the DGS compared to the conventional one     

Cellulose dimethylphenylcarbamate-bonded carbon-clad zirconia for chiral separation in high performance liquid chromatography.

Porous zirconia particles are very robust material and have received considerable attention as a stationary phase support for HPLC. We prepared cellulose dimethylphenylcarbamate-bonded carbon-clad zirconia (CDMPCCZ) as a chiral stationary phase (CSP) for separation of enantiomers of a set of 14 racemic compounds in normal phase (NP) and reversed-phase (RP) liquid chromatography. Retention and enantioselectivity on CDMPCCZ were compared to those on CDMPC-coated zirconia (CDMPCZ) to see how the change in immobilization method of the chiral selector affects the retention and chiral selectivity. In NPLC, retention was longer and the number of resolved racemates was smaller on CDMPCCZ than on CDMPCZ. However, chiral selectivity factors for some resolved racemates were better on CDMPCCZ than on CDMPCZ. The longer retention on CDMPCCZ is likely due to strong, non-chiral discriminating interactions with the carbon layer on CDMPCZ. In RPLC only two racemates were resolved on CDMPCCZ, but retention times were shorter than, and resolutions were comparable to, those in NPLC, indicating a potential for improving chromatographic performance of the CDMPCCZ column in RPLC with optimized column preparation and separation conditions.     

Phase transformation of Ni-B, Ni-P diffusion barrier deposited electrolessly on Cu interconnect

In this paper, we report that the phase transformation of Ni-B, Ni-P diffusion barriers deposited electrolessly on Cu, for the reason that the Ni-P layer is a more effective diffusion barrier than the Ni-B layer. The Ni₃B crystallized was decomposed to Ni and B₂O₃ above 400 °C and the Ni₃P crystallized was decomposed to Ni and P₂O₅ above 600 °C respectively in Ar atmosphere. Also, the Ni₃B was decomposed to Ni and free B above 400 °C and the Ni₃P was decomposed to Ni and free P above 600 °C respectively in H₂ atmosphere. The decomposed Ni formed a solid solution with Cu. The Cu diffusion occurred above 400 °C for Ni-B layer and above 600 °C for Ni-P layer, respectively. Because the decomposition temperature of Ni-P layer is about 200 °C higher than that of Ni-B layer, the Ni-P layer is a more effective barrier for Cu than the Ni-B layer.