The Recognition of Double Euler Trails in Series-Parallel Networks

Given a series-parallel network (network, for short)N, its dual networkN′ is given by interchanging the series connection and the parallel connection of networkN. We usually use a series-parallel graph to represent a network. LetG[N] andG[N′] be graph representations ofNandN′, respectively. A sequence of edgese₁, e₂,…,e_kis said to form a common trail on (G[N], G[N′]) if it is a trail on bothG[N] andG[N′]. If a common trail covers all of the edges inG[N] andG[N′], it is called adouble Euler trail.However, there are many different graph representations for a network. We say that a networkNhas a double Euler trail (DET) if there is a common Euler trail for someG[N] and someG[N′]. Finding a DET in a network is essential for optimizing the layout area of a complementary CMOS functional cell. Maziasz and Hayes (IEEE Trans. Computer-Aided Design9(1990), 708–719) gave a linear time algorithm for solving the layout problem in fixedG[N] andG[N′] and an exponential algorithm for finding the optimal cover in a network without fixing graph representations. In this paper, we study properties of subnetworks of a DET network. According to these properties, we propose an algorithm that automatically generates the rules for composition of trail cover classes. On the basis of these rules, a linear time algorithm for recognizing DET networks is presented. Furthermore, we also give a necessary and sufficient condition for the existence of a double Euler circuit in a network.     

Measurement selection for parametric IC fault diagnosis

This article presents experimental results which show feedforward neural networks are well-suited for analog IC fault diagnosis. Boundary band data (BBD) measurement selection is used to reduce the computational overhead of the FFN training phase. We compare the diagnostic accuracy between traditional statistical classifiers and feedforward neural networks trained with various measurement selection criteria. The feedforward networks consistently perform as well as or better than the other classifiers in term of accuracy. Training using BBD consistently reduces the FFN training efforts without degrading the performance. Experimental results suggest that feedforward networks provide a cost efficient method for IC fault diagnosis in a large scale production testing environment.This work is supported by NSF-IUC CDADIC, Project 90-1.     

A low cost and low power silicon npn bipolar process with NMOS transistors (ADRF) for RF and microwave applications

A silicon bipolar process for RF and microwave applications, which features 25-GHz double-polysilicon self-aligned npn bipolar transistors with 5.5-V BV/sub CEO/, optional 0.7-/spl mu/m (L/sub eff/) NMOS transistors with p/sup +/ polysilicon gates for switch applications, lateral pnp transistors, high and low valued resistors, p/sup +/ polysilicon-to-n/sup +/ plug capacitors, and inductors is described. The npn transistors utilize nitride-oxide composite spacers formed using sacrificial TEOS spacers, a process which is simpler than the previously reported composite spacer processes. Use of the composite spacer structure virtually eliminates problems relating to the extrinsic-intrinsic base link-up and reduces plasma induced damage associated with the conventional spacer process. Microwave and RF capabilities of the process up to several GHz are demonstrated by fabricating and characterizing RF amplifiers, low noise amplifiers, and RF switches.<>     

Ultralow sidelobe-level integrated acoustooptic tunable filtersusing tapered-gap surface acoustic wave directional couplers

We propose a new weighted-coupling scheme using tapered-gap surface acoustic wave directional couplers for realization of ultralow sidelobe-level integrated acoustooptic tunable filters (IAOTF's). Appropriate design analysis has been carried out for 30-mm-long filters operating at an optical wavelength of 1.55 μm in an X-cut Y-propagating LiNbO₃ substrate. New synthesized weighting functions have been used for the improvement of sidelobe level suppression over existing single-stage filters by as much as 27 dB. The -20 dB mainlobe width of the resulting IAOTF's varies from 2.7 to 3.9 nm only for the worst sidelobe levels ranging from -30.6 to -44.7 dB, respectively. It has also been shown that further suppression of sidelobe levels by 3-9 dB is possible if the filter is underdriven at 80% mode-conversion efficiency     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied     

Electrochemical reduction of Bi2Sr2Ca1Cu2O8 superconductor single crystals

Single crystals and polycrystalline pellets of the high-temperature cuprate superconductor Bi₂Sr₂Ca₁Cu₂O₈ were doped at room temperature by electrochemical reduction at > 95% Coulombic efficiency using lithium dopant ions in propylene carbonate electrolyte. Cyclic voltammetry and potential step measurements on single crystals suggest an unusual reduction mechanism, with a diffusion coefficient for Li⁺ in the c-axis direction of bulk superconductor of ca. 3 × 10⁻¹¹ cm²s⁻¹. Sintered pellets of polycrystalline powder could be doped more rapidly, with an apparent diffusion coefficient of 7 × 10⁻⁸ cm²s⁻¹. X-ray susceptibility analysis show extensive disordering occurs on heavy Li doping, with a first-order transition from a crystalline/superconducting to an amorphous/non-superconducting phase. Single, crystals of Bi₂Sr₂Ca₁Cu₂O₈ exhibited a color change on reduction from metallic gray to golden bronze. The reduced material was highly air-sensitive, forming a hydroxide surface film on exposure to ambient atmosphere.     

The behavior of cracked cross-ply composite laminates under shear loading

An interlaminar-shear-stress analysis developed earlier by Tsai et al. (1990, Micro-cracking-Induced Damage in Composites) for a [φ_m/θ_n], bi-directional composite laminate is used to solve the case of a cross-ply [0_m/90_n]_x laminate with the 90° layer only or both layers cracked under pure shear loading. Strains, forces and laminate shear modulus reduction due to matrix cracking were obtained. Experimental results for shear modulus as a function of crack densities were obtained by a simple shear test and they agree very well with the theoretical prediction.