Continuous monitoring of thermooxidative degradation products of polystyrene by membrane extraction with sorbent interface and gas chromatography

A novel method for the continuous monitoring of thermooxidative degradation products of polystyrene by membrane extraction with sorbent interface (MESI) and gas chromatography (GC) is developed. The results are compared with solid-phase microextraction-GC, which can extract gases, vapors, and aerosols. The volatile and semivolatile degradation products are identified by mass spectrometry. The membrane used in the MESI-GC analysis shows a high permeation for volatile aromatic hydrocarbons; a low permeation for corresponding volatile aldehydes; and no permeation for less volatile alcohols, acids, and degradation products with a high molecular weight, thus reducing significantly the number of compounds detected from MESI-GC. Sensitivity of the method depends on the time of trapping, which is limited by the breakthrough of the trap. By heating the trap at fixed intervals of time, consecutive gas chromatograms are obtained.     

Folding of aromatic oligoimides of trans-1,2-diaminocyclohexane

Chiral oligomeric diimides prepared from pyromellitic dianhydride, (R,R)-1,2-diaminocyclohexane and phthalic anhydride fold into M or P helical conformers; trimer 1 folds into the P conformer in the crystal but the M conformer dominates in solution; longer chain oligomers 2 and 3 form preferentially P conformers in solution, as a result of intermolecular interactions.     

Beyond Flory-Huggins theory: new classes of blend miscibility associated with monomer structural asymmetry

Flory-Huggins (FH) theory is restricted to polymer mixtures whose monomers are structurally identical, a situation limited to isotopic blends and computer simulations. We investigate the influence of monomer structure on blend miscibility and scattering properties using the lattice cluster theory generalization of the FH model. Monomer structural asymmetry is shown to profoundly affect blend miscibility (T(c),phi(c)), chain swelling (T(theta)), and the scale (xi) and intensity [S(0)] of composition fluctuations. Four distinct blend miscibility classes are identified and experimental evidence for these classes is discussed.     

Transport Coefficients in Some Stochastic Models of the Revised Enskog Equation

A stochastic model of the revised Enskog equation is considered. A choice of the smearing function suggested by the work of Leegwater is used to apply the model to the repulsive part of the Lennard-Jones potential and the inverse-power soft-sphere potential. The virial coefficients obtained from the equilibrium properties of the models are in excellent agreement with the known exact coefficients for these models. The transport coefficients for the repulsive Lennard-Jones (RLP) model are also computed and appear to be of comparable accuracy to the Enskog-theory coefficients applied directly to a hard-sphere system, although exact results for the RLP with which to make an extensive comparison are not yet available. The pressure and the transport coefficients obtained from the model (shear viscosity, thermal conductivity, and self-diffusion) are compared with the pressure and the corresponding transport coefficients predicted by the Enskog and square-well kinetic theories.     

Symmetries of Cauchy-Riemann spaces

We simplify and generalize Cartan's results on Cauchy-Riemann spaces admitting continuous groups of automorphisms. We describe all such spaces in terms of local coordinates.     

Photochemical synthesis of 7H-indolo[1,2-a]quinolinium salts - a new ring system

Photodehydrocyclization of 1-phenyl-2-/2-arylethenyl/-3,3-dialkyl-3H-indolium cations leads in very good yield to 7H-indolo[1,2-a]quinolinium cations.     

Preparation and semiconducting properties of Th3As4

The resistivity, thermoelectric power and Hall constant in the temperature range of 78–830 K were determined for polycrystalline Th₃As₄ samples obtained by annealing thin thorium slabs in arsenic vapour. The samples examined were n-type semiconductors with a carrier concentration ranging from 1.0 × 10¹⁸cm^?3 to 2.8 × 10¹⁸ cm^?3 for which the effective mass was found to be equal to 0.55–0.76m₀. The Hall mobility, about 450cm²V^?1s^?1 at room temperature, obeys a $\text{T}{}^{\mathrm{<mtext>?3</mtext><mtext>2</mtext>}}$ law at high temperatures. On the basis of the electrical measurements the forbidden gap of Th₃As₄ was found to be equal to 0.43 eV.     

Computationally effective algorithm for robust weighted averaging

One of the greatest disadvantages of the weighted signal averaging method is its sensitivity to the presence of noise and outliers in data and the need to estimate the noise variance in all signal cycles. The robust weighted averaging method based on the epsilon-insensitive loss function is free of these disadvantages, but has a very high computational burden and requires a choice of the insensitivity parameter epsilon. In this study, a new computationally effective algorithm for robust weighted averaging with automatic adjustment of the insensitivity parameter is introduced.     

Surface photovoltage spectroscopy and surface piezoelectric effect in GaAs

“Real” (111) surfaces of n-type GaAs were investigated employing surface photovoltage spectroscopy and the surface piezoelectric effect. Surface states at the energy position E_c ? E_t ? 0.72 eV were found on both the Ga and the As surfaces. Both types of surfaces exhibited a barrier of about 0.55 V. No variations in the surface barrier or the energy position of the surface states were observed in various ambients at atmospheric pressure (dry air, wet air, ammonia and ozone). However, the capture cross-section of the surface states for electrons, as determined from the surface piezoelectric effect transients (of the order of 10^?13 cm²), was found to be sensitive to the ambient. It decreased in wet air and increased in ozone. This effect was more pronounced on the As than on the Ga surfaces. Additional surface states were found to be present in the energy region of 0.9 to 1.0 eV, below the bottom of the conduction band. However, their exact energy positions could not be determined due to interference caused by the carrier trapping of the surface states at E_c ? E_t ? 0.72 eV.