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41.
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在本试验中,采用智能同步广播激励器和CCTV传输的1MHz标频,实现了中波同步广播同频保护率趋于0dB.并提出了自适应相位跟踪同步的概念。 相似文献
43.
Shye Lin Wu Chung Len Lee Tan Fu Lei Chen C.F. Chen L.J. Ho K.Z. Ling Y.C. 《Electron Device Letters, IEEE》1994,15(4):120-122
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device 相似文献
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Performance analysis of adaptive interleaving for OFDM systems 总被引:7,自引:0,他引:7
We proposed a novel interleaving technique for orthogonal frequency division multiplexing (OFDM), namely adaptive interleaving, which can break the bursty channel errors more effectively than traditional block interleaving. The technique rearranges the symbols according to instantaneous channel state information of the OFDM subcarriers so as to reduce or minimize the bit error rate (BER) of each OFDM frame. It is well suited to OFDM systems because the channel state information (CSI) values of the whole frame could be estimated at once when transmitted symbols are framed in the frequency dimension. Extensive simulations show that the proposed scheme can greatly improve the performance of the coded modulation systems utilizing block interleaving. Furthermore, we show that the adaptive interleaving out performs any other static interleaving schemes, even in the fast fading channel (with independent fading between symbols). We derived a semi-analytical bound for the BER of the adaptive interleaving scheme under correlated Rayleigh fading channels. Furthermore, we discussed the transmitter-receiver (interleaving pattern) synchronization problem 相似文献
47.
Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron
spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace
and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the
Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10−6 Ω-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed
at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρc increasing to 2.94 × 10−6Ω-cm2 and for an aging at 410°C for 40 h with its ρc increasing to 1.38 × 10−5 Ω-cm2. 相似文献
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主要论述了TMS320F240串行外设接口模块的特点,并通过与MCS5l单片机通信,实现液晶显示。 相似文献