Pulse compression of CW injection seeded gain-switched diode laser

A commercially available gain-switched diode laser was injection seeded by a CW laser diode to provide a controlled frequency chirped output which was compressed by a grating pair and telescope. Pulses were generated with a width of 12 ps and a peak power of 0.19 W at a repetition rate of 3.2 GHz     

HL－1装置中LHCD和等离子体参数的关系

本文研究了在ＨＬ－１托卡马克的不同放电阶段的低混杂波驱动特性。给出了驱动电流及驱动效率和等离子体参数，如电子平均密度ｎｅ、等离子体电流Ｉｐ及纵向磁场的关系。也给出和分析了波驱动和入射波功率的关系。在放电平段，对正反向驱动效率进行了研究和比较。     

视频特技切换台的原理与功能

本文较系统、通俗地介绍了模拟视频特技切换台的矩阵输入、混合/效果放大器(M/E)、下游键、系统控制和同步发生器等电路单元,介绍了特技切换台的切换、混合、扫变、键控的基本原理和功能。     

End-correction network of a coaxial probe for microstrip patchantennas

A simple end-correction network for the constant current probe model of probe-fed microstrip patch antennas is derived. The parameters of the network are solved asymptotically and verified by the numerical solution of the integral equation formulation. Based on the analysis of a problem concerning a coaxial-fed microstrip patch, it is concluded that: (1) TEM (transverse electromagnetic) aperture field approximation can provide an accurate result to the input admittance, and there is no need to introduce a specific correction network for most applications; and (2) Constant current probe is valid only when both k₁ h≪1 and a/h≪1 are satisfied. An end-correction network consists of a series inductance and a shunt capacitance should be used in other ranges or for higher accuracy     

一种改进的运动补偿三维小波视频编码方法

Choi等[1]提出的运动补偿三维子带编码方法是一种具有代表性的高效小波视频编码方法,其编码效率优于国际标准MPEG-2.但是该方法的运算复杂度高,编码时也没有充分利用小波图像的特点.为此,本文对该方法的两项关键技术进行了改进:采用像素域降采样运动估计技术以降低运算复杂度,采用改进的集分裂分层树(Set Partitioning in Hierarchical Trees,SPIHT)方法对三维时/空子带进行更高效的编码.实验结果表明,与原有的算法相比,本文的工作不仅降低了运算复杂度,也进一步提高了编码效率.     

One-, two-, and three-photon pumped lasing in a novel liquid dye salt system

We report the observation of one-, two-, and three-photon pumped lasing in the same medium, a novel liquid dye salt system when excited by pulsed 0.532-, 1.06-, and /spl sim/1.49-/spl mu/m coherent radiation pulses, respectively. Since the gain medium is a liquid and not a solution, it contains a significantly higher effective dye concentration and, therefore, is highly suitable for multiphoton pumped lasing and optical power limiting applications. The lasing spectra, temporal waveforms, near- and far-field intensity distributions, and output/input efficiency were measured under the conditions of one-, two-, and three-photon pump configurations.     

A note on an SOR-like method for augmented systems

Golub et al. (2001, BIT, 41, 71–85) gave a generalizedsuccessive over-relaxation method for the augmented systems.In this paper, the connection between the SOR-like method andthe preconditioned conjugate gradient (PCG) method for the augmentedsystems is investigated. It is shown that the PCG method isat least as accurate (fast) as the SOR-like method. Numericalexamples demonstrate that the PCG method is much faster thanthe SOR-like method.     

Self-aligning planarization and passivation for integration applications in III-V semiconductor devices

This work reports an easy planarization and passivation approach for the integration of III-V semiconductor devices. Vertically etched III-V semiconductor devices typically require sidewall passivation to suppress leakage currents and planarization of the passivation material for metal interconnection and device integration. It is, however, challenging to planarize all devices at once. This technique offers wafer-scale passivation and planarization that is automatically leveled to the device top in the 1-3-/spl mu/m vicinity surrounding each device. In this method, a dielectric hard mask is used to define the device area. An undercut structure is intentionally created below the hard mask, which is retained during the subsequent polymer spinning and anisotropic polymer etch back. The spin-on polymer that fills in the undercut seals the sidewalls for all the devices across the wafer. After the polymer etch back, the dielectric mask is removed leaving the polymer surrounding each device level with its device top to atomic scale flatness. This integration method is robust and is insensitive to spin-on polymer thickness, polymer etch nonuniformity, and device height difference. It prevents the polymer under the hard mask from etch-induced damage and creates a polymer-free device surface for metallization upon removal of the dielectric mask. We applied this integration technique in fabricating an InP-based photonic switch that consists of a mesa photodiode and a quantum-well waveguide modulator using benzocyclobutene (BCB) polymer. We demonstrated functional integrated photonic switches with high process yield of >90%, high breakdown voltage of >25 V, and low ohmic contact resistance of /spl sim/10 /spl Omega/. To the best of our knowledge, such an integration of a surface-normal photodiode and a lumped electroabsorption modulator with the use of BCB is the first to be implemented on a single substrate.     

Investigation of Infrared Photonic Crystal Slab with Defect Waveguides

This paper deals with the two dimensional (2-D) infrared photonic crystal slab with an air-bridge structure featuring defect waveguides in which the optical propagation properties were obtained by measurements of transmission spectra. 3-D finite-difference time-domain (FDTD) simulations have revealed the appearance of four defect propagation modes for the band structure and transmission spectra in the air-bridge slab. These defect modes were experimentally identified in the measured transmission spectra.     

等温平台石墨炉原子吸收光谱法测定高纯镍中痕量杂质锑

利用石墨炉原子吸收法，在等温平台条件下直接测定高纯镍中的痕量杂质锑，对石墨炉加热程序中的干燥时间、灰化温度及原子化温度进行了优化，同时考察了介质酸度的影响。试验表明，基体镍对锑的测定有显著的影响，为此进行了标准系列基体匹配。该法的特征质量为6．6pg；相对标准偏差为6．5％；加标回收率为100％-103％。