智能工作站主机的MMPIS实验模型研究──一个全互连式结构MMPIS硬件环境的设计与实现

本文介绍中日国际合作开发研究的Ａ１型智能网（Ａ１型ＩＮ）智能工作站（ＩＷ）主机的并行推理硬件结构的实验模型设计与实现，给出了一种并行推理硬件支持环境实现方案和该方案在实现中若干问题的解决方法。     

压缩迭加态及其特性

压缩迭加态是由迭加态通过压缩系统后产生的一种辐射经典态。这种具备了Ｗｉｇｎｅｒ相空间压缩和相干迭加压缩两种机制。详细讨论了这种压缩迭加态的量子统计性质及压缩特性。     

激光调Q CAI

从激光调Q速率方程出发,分析推导了激光调Q过程中,腔内光子数与工作物质内反转粒子数间的关系.再根据激光调Q的过程中,对腔Q值控制方式不同,将激光调Q技术分为:转镜调Q、声光调Q、电光调Q、饱和吸收调Q和脉冲透射式调Q.用C语言进行了激光调Q CAI软件的开发研制,获得了将文学、图形、动画和计算融为一体的,直观而生动地将调Q的理论和过程再现于屏幕的CAI课件.介绍了课件的内容、结构及其特点.     

叶栅全三维粘性反问题的数值解

本文发展了一种解叶栅全三维粘性反问题的新的数值方法.基于非正交曲线坐标与相应的非正交速度分量下完全守恒型的Navier－Stokes方程,全三维反问题规定叶片表面的无量纲压力分布反求叶型。计算中叶片表面的边界条件采用一种特殊的方式来处理，即一方面强加给定的压力分布条件,另方面叶面的几何位置在迭代过程中又是可移动的，其移动速度将与Navier—Stokes方程在当地的解联系起来，从而形成一种解定常问题的新的不定常过程.试算证明了本文方法的可行性。     

The importance of electrochemistry-related etching in thegate-groove fabrication for InAlAs/InGaAs HFETs

For the first time, the surface metal on nonalloyed ohmic electrodes is found to significantly change the profiles of gate grooves, when resist openings are employed to monitor drain current during wet-chemical gate recess for sub-micron InAlAs/lnGaAs heterojunction field-effect transistors (HFETs). The surface metal of Ni enhances the etching rate in comparison with that in the absence of electrodes by a factor of 4 and 10, laterally and vertically, which is favorable to fabricate deep gate grooves with small side etching. The Pt surface metal, however, leads to preferential etching of InGaAs over InAlAs, which can be useful to realize large side etching. The existence of an electrochemistry-related etching component, which arises when the ohmic electrodes are present during recess etching, is considered to be responsible for these behaviors     

Strong Diffie-Hellman-DSA Key Exchange

To provide authentication to the Diffie-Hellman key exchange, a few integrated key exchange schemes which provide authentication using the DSA signature have been proposed in the literature. In this letter we point out that all of the previous Diffie-Hellman-DSA schemes do not provide security against session state reveal attacks. We also suggest a strong Diffie-Hellman-DSA scheme providing security against session state reveal attacks as well as forward secrecy and key independence     

一类二阶三点边值问题单调正解的存在性

利用范数形式的锥上不动点定理,研究了一类二阶微分方程三点边值问题单调正解的存在性．分别给出了齐次和非齐次边界条件下的三点边值问题单调正解存在的充分条件,确定了解曲线的凹凸性,并且给出了一个应用实例．     

Stability control of the electrooptic effect with new maleimide copolymers containing photoreactive tricyanopyrrolidene‐based chromophores

New photocrosslinkable maleimide copolymers have been synthesized by the attachment of a tricyanopyrrolidene‐based chromophore. The 2‐(3‐cyano‐4‐(2‐{4‐[hexyl‐(6‐hydroxy‐hexyl)‐amino]‐phenyl}‐vinyl)‐5‐oxo‐1‐{4‐[4‐(3‐oxo‐3‐phenyl‐propenyl)‐ phenoxy]‐butyl}‐1,5‐dihydro‐pyrrol‐2‐ylidene)‐malononitrile chromophore exhibits nonlinear optical activity and contains a chalcone moiety that is sensitive to UV light (λ = 330–360 nm) for crosslink formation. The maleimide monomers have also been functionalized with chalcone moieties. The resultant copolymers exhibit great processability, and one of them shows a maximum electrooptic coefficient of 90 pm/V at 1300 nm. We could control the thermal stability of the electrooptic coefficient with the newly synthesized photoreactive copolymers successfully. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 531–542, 2007     

基于局部差别的形态学边缘检测方法研究

图像边缘特征是图像最基本也是最重要的特征之一.图像边缘特征的提取一直是计算机视觉和图像处理领域的经典研究课题,在精确制导武器的制导图预处理中有着广泛地应用.针对经典的边缘检测算子不能很好地提取噪声图像边缘这一问题,在数学形态学的基础上,提出了一种边缘提取方法.利用局部差别准则确定图像中受噪声影响的像素点,并对其进行形态学操作,滤除噪声,保存边缘.实验表明,该算法不仅具有很好的边缘提取能力,还具有很强的抗噪能力.说明了该算法的有效性和实用性.     

Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector

According to Maxwell＇s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340 nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500 μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out.