Kinetics of methylchlorosilane formation on Zn-promoted Cu3Si

The kinetics of the direct synthesis reaction (Si + 2CH₃Cl → (CH₃)₂SiCl₂) were measured on a Cu₃Si alloy containing 1.2 atom % Zn. Reaction was carried out in a differential reactor (520–595 K, 1 atm) attached to an ultrahigh vacuum (UHV) system. Auger spectroscopy was used to characterize the surface before and after reaction. Zinc does not significantly change the overall rate of reaction, but it changes selectivity to dimethyldichlorosilane (the desired product), surface composition, activation energies, and induction times. The rate of silicon diffusion to the surface is not limiting in the presence of zinc. Zinc is found to be a promoter for improved selectivity only in low concentrations, and only a fraction of the surface appears to be active for reaction. The kinetics appear relatively insensitive to the surface composition or the form of surface carbon. A Cu₃Si surface with Zn is shown to be a good model catalyst for the direct synthesis reaction.     

Extendible elements of the alternating groups

An element σ of A_n, the Alternating group of degree n, is extendible in S_n, the Symmetric group of degree n, if there exists a subgroup H of S_n but not A_n whose intersection with A_n is the cyclic group generated by σ. A simple number-theoretic criterion, in terms of the cycle-decomposition, for an element of A_n to be extendible in S_n is given here.     

Reliability Study of Loss of Off-Site Power Supply

Probabilistic parameters related to the total loss of off-site power at the Chalk River Nuclear Laboratories (CRNL) are derived from site specific data. Because of weather related seasonal dependency a periodic power failure frequency model has been adopted.     

Communicating Via Meteor Burst at Short Ranges

This paper examines the relationship between range and performance of meteor burst communication systems. Three performance measures are considered: average duty cycle, average throughput for a system which transmits fixed length message packets at a fixed data rate, and waiting time to deliver a fixed length message. In particular, we examine the range dependence of the three measures at ranges of less than 400 km. It will he demonstrated that communication connectivity can be maintained at short ranges by a combination of efficient protocol and proper antenna pattern designs.     

Comprehensive Design of a Three-Phase Three-Switch Buck-Type PWM Rectifier

A three-phase three-switch buck-type pulsewidth modulation rectifier is designed for telecom applications in this paper. The rectifier features a constant 400-V output voltage and 5-kW output power at the three-phase 400-V mains. The principle of operation and the calculation of the relative on-times of the power transistors are described. Based on analytical relationships the stresses of the active and passive components are determined and the accuracy of the given calculations is verified by digital simulations. Exemplarily, a 5-kW power converter is then designed based on the analytical expressions and on switching loss measurements from a hardware prototype constructed with insulated gate bipolar transistor/diode power modules. The loss distribution of the components, the total efficiency, and the junction temperatures of the semiconductors are then evaluated in dependency on the operating point. Finally, the trade-off between the selected switching frequency and the admissible power range for the realized design is shown and a total efficiency of 95.0% is measured on the hardware prototype, where an excellent agreement with the theoretically evaluated efficiency is shown     

Thermal conductivity, dislocation density and GaN device design

The performance of high power transistor devices is intimately connected to the substrate thermal conductivity. In this study, the relationship between thermal conductivity and dislocation density is examined using the 3 omega technique and free standing HVPE GaN substrates. Dislocation density is measured using imaging cathodoluminescence. In a low dislocation density regime below 10⁵ cm⁻², the thermal conductivity appears to plateau out near 230 W/K m and can be altered by the presence of isotopic defects and point defects. For high dislocation densities the thermal conductivity is severely degraded due to phonon scattering from dislocations. These results are applied to the design of homoepitaxially and heteroepitaxially grown HEMT devices and the efficiency of heat extraction and the influence of lateral heat spreading on device performance are compared.     

A self-aligned gate III-V heterostructure FET process forultrahigh-speed digital and mixed analog/digital LSI/VLSI circuits

A planar ion-implanted self-aligned gate process for the fabrication of high-speed digital and mixed analog/digital LSI/VLSI integrated circuits is reported. A 4-b analog-to-digital converter, a 2500-gate 8×8 multiplier/accumulator, and a 4500-gate 16×16 complex multiplier have been demonstrated using enhancement-mode n⁺ -(Al,Ga)As/MODFETs, superlattice MODFETs, and doped channel heterostructure field-effect transistors (FETs) whose epitaxial layers were grown by molecular-beam epitaxy. With nominal 1-μm gate-length devices, direct-coupled FET logic ring oscillators with realistic circuit structures have propagation delays of 30 ps/stage at a power dissipation of 1.2 mW/stage. In LSI circuit operation, these gates have delays of 89 ps/gate at a power dissipation of 1.38 mW/gate when loaded with an average fan-out of 2.5 gates and about 1000 μm of high-density interconnects. High-performance voltage comparator circuits operated at sampling rates greater than 2.5 GHz at Nyquist analog input rates and with static hysteresis of less than 1 mV at room temperature. Fully functional 4-b analog-to-digital circuits operating at frequencies up to 2 GHz were obtained