The correlation of texture and magnetic properties in Co-Cr films

This investigation focuses on the correlation between the crystallographic orientation of grains with respect to magnetic properties in Co-Cr films. Based on a distribution measured for the (0002) crystallographic pole densities, modified formulae describing the texture were used to calculate the coercivity Hc, the squareness ratio Rs (Mr⊥/TMs) and the anisotropy field Ha for Co-Cr films. In general, calculated values for the coercive force He agreed well with the measured values. The calculated Rs⊥. values were much larger than the measured ones, however, indicating that the influence of the demagnetizing field and the magnetostriction on the orientation of the magnetization cannot be neglected. On leave from Institute of Computing Technology, Academia Sinica, P.O.Box 2704-6, Beijing, P.R. China.     

A hybrid spreading/despreading function with good SNR performancefor band-limited DS-CDMA

Code-division multiple-access (CDMA) implemented with direct-sequence spread spectrum (DS/SS) signaling is a promising multiplexing technique for cellular telecommunications services. The efficiency of a direct-sequence spread-spectrum code-division multiple-access (DS-CDMA) system depends heavily on the shape of the spectrum of the spread signal. Maximum efficiency is obtained with an ideal brick-wall bandpass spectrum. There are two approaches toward achieving such a spectrum. One is to use a simple spreader that produces a broad spectrum and then follow it with a precise, high order filter to band limit the spectrum. A second approach, which is the approach taken in this paper, is to use a spreader that produces a spectrum close to the ideal spectrum and then employ a simple filter to control the out-of-band power. The proposed spreader/despreader is based on a simple hybrid function and can be easily implemented. An analysis provides a compact expression for the signal-to-noise ratio (SNR) of a RAKE receiver. The expression includes the effects of baseband, intermediate frequency (IF) and RF filtering as well as the effects of the spectral densities of the spreading/despreading functions. The analysis shows that the proposed spreader/despreader yields superior performance over a conventional pseudo noise (PN) spreading/despreading mechanism     

Positive temperature dependence of the electron impact ionizationcoefficient in In0.53Ga0.47As/InP HBTs

Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient α_n in In_0.53Ga_0.47As at medium-low electric fields are reported for the first time. The increase of α_n with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In_0.53Ga _0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In_0.53Ga _0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current     

Densification involved in the UV-based photosensitivity of silicaglasses and optical fibers

A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models     

A wafer level monitoring method for plasma-charging damage usingantenna PMOSFET test structure

A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices     

Determinants of national media attention

This study employed two perspectives to investigate media attention given women congressional candidates. The first perspective is that media attention may be explained by typical and normal media processes, such as focusing on incumbents. The second perspective considers a partisan explanation in which media attention is weighted more to Democratic candidates than Republican candidates. This study employs two established sources, Vanderbilt's Television News Index and Abstract and Information Access's National Newspaper Index , to examine the national media attention of Democratic and Republican women congressional candidates in 1990 and 1992. The investigation determined that media attention is related to whether the candidates are running for the Senate or House, incumbency, and state population. The results also reveal that party is a statistically significant factor associated with media attention. The investigation also determined that ethnic candidates tend to receive slightly less attention from the print media than nonethnic candidates.     

Electrical linewidth test structures fabricated in monocrystallinefilms for reference-material applications

The physical widths of reference features incorporated into electrical linewidth test structures patterned in films of monocrystalline silicon have been determined from Kelvin voltage measurements. The films in which the test structures are patterned are electrically insulated from the bulk-silicon substrate by a layer of silicon dioxide provided by SIMOX (Separation by the IMplantation of OXygen) processing. The motivation is to facilitate the development of linewidth reference materials for critical-dimension (CD) metrology-instrument calibration. The selection of the (110) orientation of the starting silicon and the orientation of the structures' features relative to the crystal lattice enable a lattice-plane-selective etch to generate reference-feature properties of rectangular cross section and atomically planar sidewalls. These properties are highly desirable for CD applications in which feature widths are certified with nanometer-level uncertainty for use by a diverse range of CD instruments. End applications include the development and calibration of new generations of CD instruments directed at controlling processes for manufacturing devices having sub-quarter-micrometer features     

A unified diode model for circuit simulation

A new commercially available diode model is described. This unified model is capable of simulating the widest range of diode technologies of any presently available. The emphasis of this paper is on describing the model's extensive features and flexibility in the different domains of operation and is of particular interest in power applications     

Soft commutation in capacitive idling converters

The capacitive idling converters derived from the Cuk, SEPIC, Zeta, and flyback topologies allow soft commutation of power switches without the need for additional circuitry, making it possible to increase the switching frequency while maintaining high efficiency