Novel level-identifying circuit for flash multilevel memories

This paper presents a high-speed, small-area circuit specifically designed to identify the levels in the read out operation of a flash multilevel memory. The circuit is based on the analog computation of the Euclidean distance between the current read out from a memory cell and the reference currents that represent the different logic levels. An experimental version of the circuit has been integrated in a standard double-metal 0.7-μm CMOS process with a die area of only 140×100 μm². Operating under a 5-V power supply, this circuit identifies the read-out current of a memory cell, and associates it with the appropriate logic level in 9 ns     

Ideal amplifier spacing for reduction of Gordon-Haus jitter indispersion-managed soliton communications

Based on a variational analysis, the authors demonstrate that the noise-induced Gordon-Haus timing jitter in a dispersion-managed soliton transmission system can be substantially reduced by appropriate placement of the amplifiers     

Digital cellular-its roots and its future

Cellular radio started in the early 1980s by using analog technologies. Research in voice coding, modulation, and channel coding resulted in second-generation cellular radio based on digital technologies, which were introduced in the early 1990s. These were all based on advanced time division multiple access technology, resulting in better capacity and lower cost. Today, these digital technologies-based on the Global System for Mobility, digital Advanced Mobile Phone System, and personal digital cellular-have more than 100 million subscribers worldwide. The next step is to introduce wide-band packet services for wireless Internet up to 2 Mb/s. These so-called third-generation systems (Universal Mobile Telecommunications Services, IMT2000) are planned to be introduced in the early 2000s     

Filter matrix estimation in automated DNA sequencing

In four-color fluorescence-based automated DNA sequencing, a 4×4 filter matrix parameterizes the relationship between the dye-intensity signals of interest and the data collected by an optical imaging system. The filter matrix is important because the estimated DNA sequence is based on the dye intensities that can only be recovered via inversion of the matrix. Here, the authors present a calibration method for the estimation of the columns of this matrix, using data generated through a special experiment in which DNA samples are labeled with only one fluorescent dye at a time. Simulations and applications of the method to real data are provided, with promising results     

Wideband microstrip array antenna with sidelobe cancellationchannels

An antenna array for wideband operation (up to 70%) is presented. The structure has low windloading area and consists of parallel printed circuit boards (PCB) with microstrip dipoles, feed network and metal fences placed between the PCBs. The low profile, low weight antenna array forms the main beam and three difference patterns for sidelobe cancellation. Experimental results are compared with calculations for both microstrip dipole and array     

High-performance automatic target recognition through data-specificVLSI

Under the Mojave configurable computing project, we have developed a system for achieving high performance on an automatic target recognition (ATR) application through the use of configurable computing technology. The ATR system studied here involves real-time image acquisition from a synthetic aperture radar (SAR). SAR images exhibit statistical properties which can be used to improve system performance. In this paper, the Mojave configurable computing system uses field programmable gate arrays (FPGA's) to implement highly specialized circuits while retaining the flexibility of programmable components. A controller sequences through a set of specialized circuits in response to real-time events. Computer-aided design (CAD) tools have been developed to support the automatic generation of these specialized circuits. The resulting configurable computing system achieves a significant performance advantage over the existing solution, which is based on application specific integrated circuit (ASIC) technology     

Drift hole mobility in strained and unstrained doped Si1-xGex alloys

Results of the drift hole mobility in strained and unstrained SiGe alloys are reported for Ge fractions varying from 0 to 30% and doping levels of 10¹⁵-10¹⁹ cm^-3. The mobilities are calculated taking into account acoustic, optical, alloy, and ionized-impurity scattering. The mobilities are then compared with experimental results for a boron doping concentration of 2×10¹⁹ cm^-3. Good agreement between experimental and theoretical values is obtained. The results show an increase in the mobility relative to that of silicon     

Efficient diode-pumped single-frequency erbium:ytterbium fiberlaser

We report a 7.6-mW single-frequency fiber laser operating at 1545 nm, using for the first time an Er³⁺:Yb³⁺ doped fiber and a fiber grating output coupler. The laser did not exhibit self-pulsation, which is a typical problem in short three-level fiber lasers, and had a relative intensity noise (RIN) level below -145.5 dB/Hz at frequencies above 10 MHz. The linewidth of the laser was limited by the relaxation oscillation sidebands in the optical spectrum and was typically less than 1 MHz     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

Estimation of linear parametric models of nonGaussian discreterandom fields with application to texture synthesis

A general (possibly asymmetric noncausal and/or nonminimum phase) 2D autoregressive moving average random field model driven by an independent and identically distributed 2D nonGaussian sequence is considered. The model is restricted to be invertible, i.e., system zeros are not allowed to lie on the unit bicircle. Three performance criteria are investigated for parameter estimation of the system parameters given only the output measurements (image pixels). The proposed criteria are functions of the higher order cumulant statistics of an inverse filter output. One of these criteria is novel and the others have been considered in past only for moving average inverses and without any analysis of their consistency. In the paper strong consistency of the proposed methods under the assumption that the system order is known is proved. The convergence of the proposed parameter estimators under overparametrization is also analyzed. Experimental results involving synthesized as well as real life textures are presented to illustrate the performance of two of the considered approaches. Experimental results of synthesis of 128x128 textures visually resembling several real life textures in the Brodatz album (and other sources) are presented.