Self-broadening in the millimeter-wave spectrum of ozone

Self broadened widths of seven lines of ozone between 75 and 120 GHz have been measured at room temperature. The variation with temperature of the self-broadening parameter for three of these lines has been studied in the range 245–292°K.     

Variant superfield representations

We discuss some variant superfield representations which can arise by the replacement of some of the usual fields in a multiplet with p-form gauge fields.     

Neural-style microsystems that learn

The basic operation of biological and electronic (artificial) neural networks (NNs) is examined. Learning by NNs is discussed, covering supervised learning, particularly back-propagation, and unsupervised and reinforcement learning. The use of VLSI implementation to speed learning is considered briefly. Applications of neural-style learning chips to pattern recognition, data compression, optimization, and expert systems is discussed. Problem areas and issues for further research are addressed     

Gigabit pulse position bistability in semiconductor lasers

The paper briefly reviews the major forms of optical bistability in active optical devices compatible for use in gigabit optical communication systems, and reports an entirely new optical bistability for the first time. Unlike previous devices, the two bistable states of the optical device are each a series of picosecond optical pulses at 1 GHz or greater repetition rates, and are distinguished by a half period temporal shift between their temporal positions in relation to a clock pulse. The bistable device is based on a gain switched semiconductor laser. Theoretical studies suggest 100-ps switching speeds might be achieved, and experimental results are reported indicating optically triggered switching times of 500 ps.     

A design model for surface-termination optimization of off-statesemiconductor devices

An optimization design model for surface termination of off-state semiconductor devices under reverse-bias conditions is presented. The multivariable design model is used to optimize the surface profile shapes for nonplanar devices and the doping profiles of material regions along the surface for planar devices. The effectiveness of the design model in reducing the peak surface electric field to below 50% of the bulk value is demonstrated for two examples of each type of device     

A Graphene Field-Effect Device

In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs     

Breakdown behavior of GaAs/AlGaAs HBTs

Avalanche breakdown behavior at the collector junction of the GaAs/AlGaAs HBT (heterojunction bipolar transistor) has been studied. Junction breakdown characteristics displaying hard breakdown, soft breakdown, and negative resistance breakdown behavior were observed and are interpreted by analysis of localized microplasma effects, uniform microplasma-free behavior, and associated current gain measurements. Light emission from the collector-base junction of the GaAs/AlGaAs HBT was observed and used to investigate breakdown uniformity. Using a simple punchthrough breakdown model, the theoretical breakdown curves at different collector doping concentrations and thicknesses were computed and found to be in agreement with maximum breakdown voltages measured from devices displaying the most uniform junction breakdown. The serious current gain degradation of GaAs/AlGaAs HBTs at low current densities was analyzed in connection with the measurement of a large collector-emitter breakdown voltage. The unexpected functional relationship between the collector-emitter breakdown voltage and collector-base breakdown voltage is explained by the absence of a hole-feedback effect for devices not exhibiting transistor action     

Elektrische Charakterisierung von Hochfrequenz-Niederdruck-Gasentladungen

In recent years there has emerged significant interest in low pressure radio frequency (rf) glow discharges which are used widely particulary in IC fabrication. Various parameters of the rf glow discharge have been found to be useful for its electrical characterization; however, there is no uniformity and agreement. Extensive experimental investigations on various discharge systems have shown, that the self-bias on the rf driven electrode, the complex conductivity and the breakdown characteristic are preferable parameters of rf discharges. Advantageously the self-bias and the complex conductivity should be presented in dependence on the pressure and the applied rf voltage. The discharge current cannot be measured quite accurately due to currents via leaky capacitors and the deviations from a sinusoidal form of the current due to nonlinearities.     

Estimates for transition probabilities on a compact manifold

The purpose of this note is to describe a procedure for transferring familiar estimates for transition probabilities on RN to transition probabilities on compact manifolds.