Mössbauer study of Martian regolith analogues

Terrestrial basalt rocks considered to be a good analogues of the Martian regolith were studied by using the Mössbauer spectroscopy and X-ray diffraction. The weathering of basalts was followed by the changes of the Fe²⁺/Fe³⁺ ratio. The basalt rock undergoes alteration from primary mineral composition (olivine+pyroxene+plagioclase) through smectite to kaolinite clay with oxides and hydroxides with the increase of the Fe²⁺/Fe³⁺ ratio.     

Drift hole mobility in strained and unstrained doped Si1-xGex alloys

Results of the drift hole mobility in strained and unstrained SiGe alloys are reported for Ge fractions varying from 0 to 30% and doping levels of 10¹⁵-10¹⁹ cm^-3. The mobilities are calculated taking into account acoustic, optical, alloy, and ionized-impurity scattering. The mobilities are then compared with experimental results for a boron doping concentration of 2×10¹⁹ cm^-3. Good agreement between experimental and theoretical values is obtained. The results show an increase in the mobility relative to that of silicon     

Efficient diode-pumped single-frequency erbium:ytterbium fiberlaser

We report a 7.6-mW single-frequency fiber laser operating at 1545 nm, using for the first time an Er³⁺:Yb³⁺ doped fiber and a fiber grating output coupler. The laser did not exhibit self-pulsation, which is a typical problem in short three-level fiber lasers, and had a relative intensity noise (RIN) level below -145.5 dB/Hz at frequencies above 10 MHz. The linewidth of the laser was limited by the relaxation oscillation sidebands in the optical spectrum and was typically less than 1 MHz     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

Storage performance-metrics and benchmarks

The metrics and benchmarks used in storage performance evaluation are discussed. The technology trends taking place in storage systems, such as disk and tape evolution, disk arrays, and solid-state disks, are highlighted. The current popular I/O benchmarks are then described, reviewed, and run on three systems: a DECstation 5000/200 running the Sprite Operating System, a SPARCstation 1+ running SunOS, and an HP Series 700 (Model 730) running HP-UX. Two approaches to storage benchmarks-LADDIS and a self-scaling benchmark with predicted performance-are also described     

20-nm optical wavelength conversion using nondegenerate four-wavemixing

Wavelength conversion of optical signals over 20 nm is demonstrated using highly nondegenerate four-wave mixing in a semiconductor traveling-wave optical amplifier. This technique has the potential for extremely-high-speed operation and allows continuous tuning of both input and output wavelengths over the amplifier gain bandwidth. It is demonstrated that, even for such a large wavelength conversion range, it is possible to obtain conversion efficiencies in excess of -10 dB and high extinction ratios. The feasibility of the technique is demonstrated by system measurements at 622 Mb/s, showing a 1.1-dB power penalty at 10^-9 bit error rate (BER)     

FEM study of palladium and molybdenum clusters on an alumina covered field emitter

Palladium and molybdenum polycrystalline layers (clusters) have been deposited in a stainless steel UHV system onto a layer of alumina (Al₂O₃). This layer has been prepared by high temperature oxidation of an aluminium layer. The interaction of this system with nitrogen has been investigated at room temperature by an FEM technique. Under these conditions nitrogen spillover from molybdenum to palladium has been observed.     

Estimation of linear parametric models of nonGaussian discreterandom fields with application to texture synthesis

A general (possibly asymmetric noncausal and/or nonminimum phase) 2D autoregressive moving average random field model driven by an independent and identically distributed 2D nonGaussian sequence is considered. The model is restricted to be invertible, i.e., system zeros are not allowed to lie on the unit bicircle. Three performance criteria are investigated for parameter estimation of the system parameters given only the output measurements (image pixels). The proposed criteria are functions of the higher order cumulant statistics of an inverse filter output. One of these criteria is novel and the others have been considered in past only for moving average inverses and without any analysis of their consistency. In the paper strong consistency of the proposed methods under the assumption that the system order is known is proved. The convergence of the proposed parameter estimators under overparametrization is also analyzed. Experimental results involving synthesized as well as real life textures are presented to illustrate the performance of two of the considered approaches. Experimental results of synthesis of 128x128 textures visually resembling several real life textures in the Brodatz album (and other sources) are presented.     

Hydroxyl ion conduction in ytterbium-doped strontium cerate at T<580 K in H2O/air atmosphere

Open circuit voltage (OCV) measurements in H₂O/air concentration cells at T<580 K using Yb-doped SrCeO₃ electrolyte indicate that under these conditions, protons are transported through the electrolyte as -ve ions, possibly as hydroxyl (OH⁻) ions. The H⁺ ionic transport, which is generally reported, becomes the dominant mode for H₂O/air concentration cells at temperatures greater than 750 K or when H₂O/air electrodes are replaced by H₂/Ar, and the anomalous OCV sign disappears. The combination of low temperature and the presence of hydrogen and oxygen as provided by the H₂O/air system appears to be necessary for the postulated hydroxyl ion electrode reactions to take place. In addition to OCV measurements, results from impedance spectroscopy are used to provide evidence in support of the suggested hydroxyl ion mode of protonic transport under the specified conditions. These findings are directly relevant in the development of novel humidity sensors in the temperature range 450–580K and is reported in a separate paper in this conference. Paper presented at the 3rd Euroconference on Solid State Ionics, Teulada, Sardinia, Italy, Sept. 15–22, 1996     

The correlation of texture and magnetic properties in Co-Cr films

This investigation focuses on the correlation between the crystallographic orientation of grains with respect to magnetic properties in Co-Cr films. Based on a distribution measured for the (0002) crystallographic pole densities, modified formulae describing the texture were used to calculate the coercivity Hc, the squareness ratio Rs (Mr⊥/TMs) and the anisotropy field Ha for Co-Cr films. In general, calculated values for the coercive force He agreed well with the measured values. The calculated Rs⊥. values were much larger than the measured ones, however, indicating that the influence of the demagnetizing field and the magnetostriction on the orientation of the magnetization cannot be neglected. On leave from Institute of Computing Technology, Academia Sinica, P.O.Box 2704-6, Beijing, P.R. China.