Quick simulation of detector error probabilities in the presence ofmemory and nonlinearity

One would like to compare and analyze digital communication systems based upon their overall probability of error. Unfortunately, easily evaluated closed form expressions for these probabilities are almost impossible to derive due to the complexity of the stochastic systems usually encountered. Hence, one must often resort to simulation to obtain the desired quantities. The most obvious technique is Monte Carlo simulation, which directly counts the number of errors in repeated trials. The problem is that error probabilities are usually quite small, requiring numerous simulation runs to sufficiently “hit” the rare event to gain adequate knowledge of its statistics. This places severe demands on the computer's random number generator. Importance sampling strategies simulate under altered input signal distributions (e.g., translation or stretching) so as to “speedup” convergence of the error estimators. The authors discuss a speedup technique termed quick simulation based upon results in large deviation theory. The quick simulation method is shown to compare favorably with three other importance sampling techniques for simulating a simple nonlinear system with memory     

Modulation resonance enhancement in SCH quantum-well lasers with anexternal Bragg reflector

The modulation response of a semiconductor laser can be enhanced by coupling it to an external cavity with frequency-selective feedback. This creates a comb of transmission bands where the modulation response is high, at the cavity round-trip frequency and its harmonics. In a previous publication, we related the bandwidths of these bands to the material and structural parameters of a bulk laser. We showed that a nonzero linewidth enhancement factor together with a nonzero intermediate facet reflectivity lead to deep nulls close to the peaks of these transmission bands. This suggests that quantum-well (QW) lasers, which have a low linewidth enhancement factor, may give a better performance than bulk lasers. To test this hypothesis, we have extended our analysis to model QW lasers coupled to a fiber grating. Carrier transport, carrier heating, intraband carrier fluctuations, and nonparabolic band structures are considered. We show that electron carrier transport and amplitude-phase coupling in the separate-confinment-heterostructure (SCH) layer contribute to the nulls in the modulation response. Therefore, the apparent advantage of having a reduced linewidth enhancement factor that we found in our previous analysis cannot be fully realized by using QW lasers     

Design and characterization of a mode-splitting Ψ-junction

It will he shown In this paper, that the mode conversion factor (MCF) as defined for Y-junctions, can be profitably applied for the design of three branch junctions for splitting the three lowest-order modes of a channel waveguide. Accordingly, these so-called mode-splitting Ψ-junctions were designed for implementation in PECVD SiON-technology. Propagation calculations point to crosstalk levels well below -20 dB at 10-20 mm junction length. The produced Ψ-junctions show crosstalk of less than -17 dB, mainly originating from the nonhomogeneity of the refractive indexes of the SiON layers     

A comprehensive study of performance and reliability of P, As, andhybrid As/P nLDD junctions for deep-submicron CMOS logic technology

A comprehensive study of P, As, and hybrid As/P nLDD junctions is presented in terms of performance, reliability, and manufacturability for the first time. It is found that As junctions limit the performance of deep submicron devices due to unacceptable hot-carrier reliability, whereas a hybrid junction (light dose P added to medium dose As) dramatically improves hot-carrier reliability while maintaining high performance and manufacturability. For L_eff of 0.19 μm, using this hybrid junction in a manufacturing process, an inverter gate delay of 32 ps, dc hot carrier life time exceeding ten years, and off-state leakage below 30 pA/μm at 2.9 V have been achieved     

The blocking barrier effect on aluminum electromigration due totitanium layers in multilayered interconnects of LSI's

Experimental evidence of an increase in the resistance of a cathode-side metal line without any void generation is presented for a multilayered metal structure terminated by via-holes during electromigration tests. This resistance increase is reversed to the initial value by high temperature storage after electromigration testing. The increase in the resistance of multilayered metal structures is attributed to the vacancy accumulation in the cathode side due to the blocking barrier effect of the refractory metal layer in the via-hole     

Recursive simulation models of the semiconductor laser modulationcharacteristics for accurate performance evaluation of coherent opticalCPFSK systems

Modeling of the semiconductor laser nonuniform FM response and residual IM modulation is essential for the computer-aided design of coherent optical communication systems. This paper presents an accurate simulation model, in which the FM and IM responses are represented by recursive digital filters derived directly from measurements. A comparison with previous models of the bibliography reveals the advantages of the current approach. The proposed modeling procedure is applied in the case of a single-electrode DFB laser. This DFB model, in combination with a semi-analytical technique for the evaluation of the error probability, is used to study the influence of the modulation characteristics on the performance of a coherent heterodyne CPFSK system with differential receiver operating at 1 Gb/s. Theoretical and experimental results are in excellent agreement     

Supply current testing in linear bipolar ICs

Fault detection in linear bipolar integrated circuits using power supply current measurements is investigated. The most prevalent, catastrophic and parametric faults, have been modelled for a representative (741 type) opamp. The circuit is simulated under both linear and nonlinear operation. Comparative results between power supply current and output voltage measurements are given, showing the improvement in fault coverage by the use of the current sensing method.<>     

10 Gbit/s NRZ global transmission using optically amplifiedelectronic regeneration

10 Gbit/s NRZ error-free fibre transmission over distances exceeding 400000 km is demonstrated using an optically amplified regenerator with a 160 km span. Direct modulation of a DFB laser raises the stimulated Brillouin scattering power threshold while maintaining system simplicity and robustness     

Failure analysis of ULSI circuits using photon emission

A real-time failure analysis technique for ULSI circuits using photon emission is proposed. This technique utilizes a photon detection system combined with a circuit tester. Improved failure detection is achieved because the tester can bias arbitrary blocks in the ULSI chip. Detecting and correct process defects and design errors improves the reliability of the ULSI chip     

High-speed InGaP/GaAs HBTs with a strained InxGa1-xAs base

A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded In_xGa_1-xAs base has been demonstrated with f_T=83 GHz and f_max=197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT's. The graded base, which improves electron transport through the base, results in a DC current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high f_max results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT's in high-speed microwave applications