Distribution of recombination currents in the space charge regionof heterostructure bipolar devices

This paper addresses the problem of the space charge region Shockley-Read-Hall (SRH) recombination currents in heterojunctions with one noncrystalline side. A formulation which generalizes previous works is discussed. The approach is based on the drift-diffusion model with a thermionic-field emission boundary condition. The main physical parameters which determine the relative contribution of each zone of the space charge region (SCR) to the total recombination current are identified. The general analysis is applied for the first time to amorphous/crystalline heterojunctions and design criteria are established to minimize the total recombination current     

Long-wavelength 640×486 GaAs-AlGaAs quantum well infraredphotodetector snap-shot camera

A 9-μm cutoff 640×486 snap-shot quantum well infrared photodetector (QWIP) camera has been demonstrated. The performance of this QWIP camera is reported including indoor and outdoor imaging. The noise equivalent differential temperature (NEΔT) of 36 mK has been achieved at 300 K background with f/2 optics. This is in good agreement with expected focal plane array sensitivity due to the practical limitations on charge handling capacity of the multiplexer, read noise, bias voltage, and operating temperature     

High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow ridge structures were 300 A/cm/sup 2/ and 330 A/cm/sup 2/ for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87-89% and the internal losses of 7-10 cm/sup -1/ were obtained.     

Loss performance of tagged and normal ATM cells at a partiallyshared buffer

The loss performance of tagged and normal ATM cells at a first-in-first-out (FIFO) buffer is studied. The authors show that if a partial buffer sharing mechanism is adopted the loss probability of normal cells can be firmly guaranteed, regardless of the traffic intensity of tagged cells     

Multipoint communication: a survey of protocols, functions, andmechanisms

Group communication supports information transfer between a set of participants. It is becoming more and more relevant in distributed environments. For distributed or replicated data, it provides efficient communication without overloading the network. For some types of multimedia applications, it is the only way to control data transmission to group members. This paper surveys protocol functions and mechanisms for data transmission within a group, from multicast routing problems up to end-to-end multipoint transmission control. We provide a bibliography which is organized by topic     

THE USE OF THERMOELASTICITY TO EVALUATE STRESS REDISTRIBUTION AND NOTCH SENSITIVITY IN CERAMIC MATRIX COMPOSITES

Thermoelastic stress analysis was used to document the effect of composite damage on the stress distribution in three ceramic matrix composites. Composite damage was found to significantly alter the thermoelastic response of each material, with the greatest effect noted in SiC/CAS. Thermoelastic imaging of these materials affords a more complete picture of how the various damage mechanisms affect the stress distribution. In particular, a stress concentration factor computed from thermoelastic images, serves as an indicator of stress redistribution. The stress concentration factors were computed by comparing notch root to far field temperatures, and monitored after the introduction of various amounts of damage. In each material, the stress concentration factor diminished as the damaging load approached the ultimate stress. Reduction in the stress concentration is associated with local changes in modulus, mechanistically arising from combinations of fiber, matrix and interface fracture. Stress redistribution occurs as a consequence of modulus changes, leading to lower notch sensitivity in each of the tested composites.     

Miscible blends of modified poly(aryl ether ketones) with aromatic polyimides

The phase behavior of binary blends of poly(ether ether ketone) (PEEK), sulfonated PEEK, and sulfamidated PEEK with aromatic polyimides is reported. PEEK was determined to be immiscible with a poly(amide imide) (TORLON 4000T). Blends of sulfonated and sulfamidated PEEK with this poly(amide imide), however, are reported here to be miscible in all proportions. Blends of sulfonated PEEK and a poly(ether imide) (ULTEM 1000) are also reported to be miscible. Spectroscopic investigations of the intermolecular interactions suggest that formation of electron donoracceptor complexes between the sulfonated/sulfamidated phenylene rings of the PEEKs and the n-phenylene units of the polyimides are responsible for this miscibility. © 1993 John Wiley & Sons, Inc.     

Deep levels,electrical and optical characteristics in SnTe-Doped GaSb Schottky Diodes

The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb₄/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550°C under a Sb₄/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.     

Error floor of MSK modulation in a mobile-radio channel with twoindependently fading paths

We investigate the error probability bit error rate (BER) of minimum shift keying (MSK) modulation with differential detection in a two-path fading channel without noise (error floor). We develop a new method for the computation of the BER: we show that errors occur if the phasors of the instantaneous impulse response fall into certain regions of the complex plane; then we average over the statistics of the phasors to arrive at the mean BER. With this method, we derive analytical expressions for the BER for arbitrary amplitude statistics of the paths. For the special case of two Rayleigh-fading paths with small delay, we find that the BER is proportional to the square of the mean delay spread (normalized to the bit length) if we sample between the two pulses. This proves the qualitative behavior of previous estimates, but our results allow also a more exact quantitative formulation. The quadratic dependence of the BER on the delay spread breaks down if we have one Rayleigh-fading and one Rician-fading path. We find that the bit combinations 1-11 and -11-1 do not lead to errors in the two-path model. However, additional Monte Carlo simulations show that these bit combinations do lead to errors in a three-path model     

Strict calculation of the light statistics at the output of a travelling wave optical amplifier

A new method for calculating the probability density function of the photon number propagating through a travelling wave optical amplifier with no restriction on its working regime (linear and nonlinear) is reported. The authors show that the widely used Gaussian approximation of the probability density function does not match the real statistics if the incident optical power is small.<>