Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same.     

Mechanisms of n‐butanol formation in butyl acrylate latexes

The mechanisms involved in the formation of n‐butanol during the synthesis of butyl acrylate containing latices were investigated. The experimental results showed that neither the hydrolysis of butyl acrylate nor of the ester bond in the butyl acrylate segments of the polymer played a major role in the formation of n‐butanol, which was mainly generated from the polymer backbone, by transfer reactions to polymer chain followed by cyclization. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 5838–5846, 2007     

Multi-mode wave propagation in ribbed plates: Part I,wavenumber-space characteristics

This paper addresses the issue of energy propagation features in ribbed panels over a wide frequency range. First, a tool for estimating the wave propagation characteristics of one- and two-dimensional structures by k-space analysis is presented. This tool uses a concept of Inhomogeneous Wave Correlation with sparse measured or extracted data, and leads to the estimation of θ-dependent wavenumbers. Here, the method is employed with the sparse simulated and measured normal velocities of a set of ribbed panels and new insights into their k-space behavior are highlighted. Behavior is essentially characterized at low frequencies by structural orthotropy. Comparisons with homogenized data show very good agreement. At higher frequencies, a new behavior pattern is observed and explained both numerically and experimentally. This is a multi-modal waveguide type of propagation in a direction parallel to the ribs.     

Buckling of a stiff thin film on a compliant substrate in large deformation

A finite-deformation theory is developed to study the mechanics of thin buckled films on compliant substrates. Perturbation analysis is performed for this highly nonlinear system to obtain the analytical solution. The results agree well with experiments and finite element analysis in wavelength and amplitude. In particular, it is found that the wavelength depends on the strain. Based on the accurate wavelength and amplitude, the membrane and peak strains in thin films, and stretchability and compressibility of the system are also obtained analytically.     

Multi-layer thin films/substrate system subjected to non-uniform misfit strains

Current methodologies used for the inference of thin film stress through curvature measurement are strictly restricted to stress and curvature states that are assumed to remain uniform over the entire film/substrate system. These methodologies have recently been extended to a single layer of thin film deposited on a substrate subjected to the non-uniform misfit strain in the thin film. Such methodologies are further extended to multi-layer thin films deposited on a substrate in the present study. Each thin film may have its own non-uniform misfit strain. We derive relations between the stresses in each thin film and the change of system curvatures due to the deposition of each thin film. The interface shear stresses between the adjacent films and between the thin film and the substrate are also obtained from the system curvatures. This provides the basis for the experimental determination of thin film stresses in multi-layer thin films on a substrate.     

Closed-form solutions for a rectangular layer with central crack under anti-plane shear stress

We consider the problem of determining the stress distributionin a finite rectangular elastic layer containing a Griffithcrack which is opened by internal shear stress acting alongthe length of the crack. The mode III crack is assumed to belocated in the middle plane of the rectangular layer. The followingtwo problems are considered: (A) the central crack is perpendicularto the two fixed lateral surfaces and parallel to the othertwo stress-free surfaces; (B) all the lateral surfaces of therectangular layer are clamped and the central crack is parallelto the two lateral surfaces. By using Fourier transformations,we reduce the solution of each problem to the solution of dualintegral equations with sine kernels and a weight function whichare solved exactly. Finally, we derive closed-form expressionsfor the stress intensity factor at the tip of the crack andthe numerical values for the stress intensity factor at theedges of the cracks are presented in the form of tables.     

Combined supercritical-fluid chromatography/mass spectrometry in the analysis of diuron in plasma using on-line phase-system switching

On-line sample pretreatment by means of the phase-system switching approach is an interesting technique for the analysis of aqueous samples, e.g., plasma, by means of supercritical-fluid chromatography. In order to analyse plasma samples the following analytical procedure is used. The plasma sample is injected on to a short precolumn, which is washed with water and subsequently dried with nitrogen. Next, the solutes are desorbed with the supercritical mobile phase, analysed with packed-column supercritical-fluid chromatography and detected with either a UV detector or a mass spectrometer, equipped with a moving-belt interface. The herbicide diuron is selected as a test compound to study the feasibility of this approach. Using a selective detector the procedure is sufficiently sensitive to detect diuron in plasma, but not appropriate to detect the diuron metabolites in a post-mortem plasma sample. These have been identified with liquid chromatography/mass spectrometry. The detection limit of diuron in plasma using the procedure described is about 30 ng/mL.     

Characterization of thermal diffusion in polymer solutions by thermal field-flow fractionation: Dependence on polymer and solvent parameters

The thermal diffusion coefficient D_T has been obtained for 17 polymer-solvent combinations, each of them spanning a range of polymer molecular weights, using thermal field-flow fractionation. The polymers examined include polystyrene, poly(alpha-methyl)styrene, polymethylmethacrylate, and polysioprene. The solvents include benzene, toluene, ethylbenzene, tetrahydrofuran, methylethylketone, ethylacetate, and cyclohexane. Although D_T was confirmed as essentially independent of polymer molecular weight, it was found to vary substantially with the chemical composition of polymer and solvent. The results were used to evaluate several thermal diffusion theories; the agreement with theory was generally found to be unsatisfactory. Attempts were then made to correlate the measured thermal diffusion coefficients with various physicochemical parameters of the polymers and solvent. A good correlation was found in which D_T increases with the thermal conductivity difference of the polymer and solvent and varies inversely with the activation energy of viscous flow of the solvent.     

Novel method for calculating maximum bulk electric field in high-voltage diodes with large negative bevel angles

The letter describes a simple method for calculating the maximum bulk electric field in high-voltage semiconductor diodes with large bevel angles. It is based on the notion of a characteristic length, which is defined in the letter. The resulting model is a useful design aid.     

Hot-carrier reliability of 20V MOS transistors in 0.13 μm CMOS technology

This paper presents results of reliability investigation of 20 V N-Drift MOS transistor in 0.13 μm CMOS technology. Due to high performances required for CMOS applications, adding high voltage devices becomes a big challenge to guarantee the reliability criteria. In this context, new reliability approaches are needed. Safe Operating Area are defined for switch, V_ds limited and V_gs limited applications in order to improve circuit designs. For V_ds limited applications, deep doping dose effects in drift area are investigated in correlation to lifetime evaluations based on device parameter shifts under hot carrier stressing. To further determine the amount and locations of hot carriers injections, accurate 2D technological and electrical simulations are performed and permit to select the best compromise between performance and reliability for N-Drift MOS transistor.