On the selective counting of third-order products

A practical and efficient method is presented for the counting of third-order products generated by an arbitrary number of carriers with arbitrary power spectral shapes. In particular, three selective counting procedures (i.e. sorting by position, sorting by position and group, and sorting by position, group, and kind) are introduced in a systemic way, based upon a discrete third-order Volterra model. The advantage of the counting algorithm is that (1) the algorithm provides the exact counting of third-order products of all eleven possible groups; (2) the counting process requires only two multiplications for the selective counting of third-order products at each position, and the algorithm, which is thus efficient, can be easily implemented     

A low-power 8-b 1 3.5-MHz video CMOS ADC for visiophony ISDNapplications

A half-flash, subranging, 8-b, 13.5-MHz, video ADC (analog-to-digital converter) using overlapped architecture that combines the advantages of both flash and half-flash converters is described. Its conversion rate is that of a flash, without any multiplexing and with a low number of comparators. Its low power consumption and the small silicon area required for its implementation enable it to be integrated in mixed digital/analog circuits such as a video acquisition circuit devoted to visiophony applications. It has been manufactured using a CMOS 1-μm technology with two polysilicon and two metallization layers     

Growth and characterization of hot-wall epitaxial CdTe on (111) HgCdTe and CdZnTe substrates

Thin CdTe films were deposited by hot-wall epitaxy (HWE) on (111) HgCdTe and CdZnTe substrates at temperatures from about 140 to 335°C. X-ray rocking curves were used to show that crystal quality of the CdTe (111)B films improved as substrate temperature increased from 140 to about 250°C. Rocking curve values for full width at half maximum (FWHM) decreased from 2–4 degrees at 140–150°C to less than 100 arc-s at 250°C, and a FWHM of 59 arc-s was the lowest value observed near 250°C. The FWHM of the HWE CdTe was found to be insensitive to growth rate below about 400Å/min, but increased to four degrees at 1250Å/min. X-ray diffraction confirmed that films grown on the B-face at higher temperatures were epitaxial, but contained a significant volume fraction, 35% to 50%, of rotational in-plane twins. Electron microscopy confirmed a coarse twin density, and photoluminescence spectra showed an absence of excitonic emission in the HWE films. Simultaneous growth on two (111) HgCdTe substrates with different surface polarities between 230°C and 335°C showed that deposition rate on the A-face decreased relative to that on the B-face as temperature increased. Films grown on the B-face exhibited better surface morphologies than those grown on the A-face.     

输入——输出迭代算法中松弛因子的确定

本文利用变分的手段提示了输入—输出迭代算法中松弛因子的取值规律。     

The pole expansion in normalized QED

We present a pole expansion for the propagators in the framework of normalized quantum electrodynamics and compare it with the more canonical results from S-matrix theory.     

High speed p-type SiGe modulation-doped field-effect transistors

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (f_T) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g_m) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K     

The sub-rating channel assignment strategy for PCS hand-offs

A new personal communications services (PCS) hand-off scheme is proposed. This scheme provides for hand-off to radio ports on which there is no free channel by “sub-rating” an existing connection. With sub-rating, an occupied full-rate channel is temporarily divided into two half-rate channels: one to serve the existing call and the other to serve the hand-off request. The blocking probabilities (combined forced terminations of existing calls and blocking of new call attempts) of this new scheme compare favorably with the standard scheme (nonprioritizing) and the previously proposed prioritizing schemes. The costs for this scheme are presented and discussed, as well as the additional procedural complexity of implementing on-the-fly sub-rating and the impact of continuing the conversation on a lower rate channel (which may lower speech quality of increase battery drain). Analytical models and simulations investigating the traffic impacts are presented, as are the results that show that even in the highest offered load considered a 3-min conversation in the busy hour experiences less than half a second of sub-rated conversation on average and only about 3% of the calls experience more than 5.12 s of sub-rated conversation. This scheme can increase capacity by 8-35% for systems with 1% call incompletion probability     

Calculation of optimum spacing for a three coil axially symmetric metal detector

When designing an in-line metal detector, a three coil axially symmetric design is often employed. For maximum sensitivity to small particles, the spacing of the coils is an important factor. A formula is derived which predicts the signal produced by a metal sphere when moved along the axis of such a detector and from this a graph is produced to determine the optimum coil spacing.<>