首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   370875篇
  免费   5378篇
  国内免费   1536篇
化学   171864篇
晶体学   4490篇
力学   13155篇
综合类   41篇
数学   36440篇
物理学   95514篇
无线电   56285篇
  2020年   2277篇
  2019年   2200篇
  2018年   2262篇
  2017年   2128篇
  2016年   4321篇
  2015年   3557篇
  2014年   4960篇
  2013年   14968篇
  2012年   11509篇
  2011年   14271篇
  2010年   9230篇
  2009年   9833篇
  2008年   14447篇
  2007年   15146篇
  2006年   14677篇
  2005年   13724篇
  2004年   12417篇
  2003年   11063篇
  2002年   10907篇
  2001年   12344篇
  2000年   9850篇
  1999年   8065篇
  1998年   6865篇
  1997年   6638篇
  1996年   6627篇
  1995年   6195篇
  1994年   5908篇
  1993年   5731篇
  1992年   6135篇
  1991年   6025篇
  1990年   5565篇
  1989年   5187篇
  1988年   5386篇
  1987年   4430篇
  1986年   4303篇
  1985年   5959篇
  1984年   6012篇
  1983年   4953篇
  1982年   5304篇
  1981年   5277篇
  1980年   5026篇
  1979年   5071篇
  1978年   5067篇
  1977年   5036篇
  1976年   4961篇
  1975年   4850篇
  1974年   4712篇
  1973年   4847篇
  1972年   2818篇
  1971年   2124篇
排序方式: 共有10000条查询结果,搜索用时 679 毫秒
201.
We demonstrate a novel 40-GHz mode-locked fiber laser that utilizes a single active device to provide both gain and mode-locking. The laser produces pulses as short as 2.2 ps, is tunable over a 27-nm band centered at 1553 nm, and exhibits long-term stability without cavity-length feedback control. The pulse train at 1556 nm was used in a 40-Gb/s transmission experiment over 45 km with a low 0.4-dB power penalty.  相似文献   
202.
One issue in the design and implementation of a wireless local area network is the selection of access point (AP) locations. Proper AP placement is necessary to provide adequate signal coverage and also to minimize cochannel coverage overlap. The impact of incorrect placement of APs is significant. Placing APs too far apart can lead to gaps in coverage. On the other hand, placing the units too close together leads to excessive cochannel coverage overlap, degrading system performance. Currently, AP placement involves a "trial and error" technique. When a technician tests the effect of moving an AP from one location to another, it is necessary to spend considerable time manually measuring signal strengths in order to determine how this move affects the AP's coverage area. In this letter, we describe a procedure for estimating the coverage areas of relocated APs. The procedure can be used as part of a manual design process or as part of an automated design tool.  相似文献   
203.
In this letter, we present an improved index-based a-posteriori probability (APP) decoding approach for the error-resilient transmission of packetized variable-length encoded Markov sources. The proposed algorithm is based on a novel two-dimensional (2D) state representation which leads to a three-dimensional trellis with unique state transitions. APP decoding on this trellis is realized by employing a 2D version of the BCJR algorithm where all available source statistics can be fully exploited in the source decoder. For an additional use of channel codes the proposed approach leads to an increased error-correction performance compared to a one-dimensional state representation.  相似文献   
204.
Electromagnetic interference (EMI) noises generated in power converters are diffused on the surface of conductors. This means influences occur from radiated EMI noises emitted from power transmission lines as well as conducted EMI noises transmitted from them. EMI noises diffusing on the surface of conductors are generally difficult to control using conventional concentrated constant theory. Thus, a new approach based on distributed constant circuit theory is needed in order to control EMI noises. A power converter structure to control EMI noises using multilayer power printed circuit technology is studied in this paper. A structure which can control EMI noises should simultaneously satisfy two conditions, i.e., one to shut down and one to attenuate EMI noises. The structure satisfying these conditions is studied through simulations using the Transmission-Line Modeling Method. The simulations show that the diffusion of EMI noises is controlled by dividing the flow of currents produced by EMI noises into the horizontal and perpendicular directions. That is, the horizontal current flow is controlled inside using the differences in the resistance produced from differences between inner and outer diameter of power transmission lines and the perpendicular current flow can be controlled by properly designing the thickness of the dielectric layer sandwiched between P-and N-power transmission lines with the symmetrical structure. Moreover, it is confirmed by simulations and experiments that the attenuation of EMI noises is affected by the width of the power transmission lines. It is expected that the results obtained in this paper can provide important rules when designing power converters with EMI noise control functions which use the multilayer power printed circuit technology.  相似文献   
205.
Analogue switch for very low-voltage applications   总被引:2,自引:0,他引:2  
A new analogue switch suitable for operation at very low-voltage supply in a standard CMOS technology is presented. The proposed switch is based on 'quasi-floating-gate' transistors and has a simple and compact structure. For illustrative purposes, two sample-and-hold circuits operating from a single supply voltage close to the threshold voltage of a transistor, and using the proposed technique, are presented. Experimental results obtained from prototypes in a 1.5 /spl mu/m CMOS technology are provided.  相似文献   
206.
This study investigates the effect of extraction methods on the color of date syrup and the potential use of microwave power for syrup processing. Sugar solutions were extracted from dates by boiling, soaking and blending. Color and sugar content of the extracted solutions were measured, and the percentage of sugar extracted form the total fruit sugar determined. Boiling was found to be the most efficient method of extraction whereby 74% of total samples sugar was extracted. In contrast, only 54.2% of fruit sugar was extracted by blending and 42% by soaking. In addition, solutions extracted by soaking and blending had a foaming problem in the subsequent concentration process. The extraction method had no effect on the product final color. The extracted solution was concentrated using two heating methods: conventional and microwave heating at a 600 W capacity and a frequency of 2450 MHz applied at three power levels: 10, 7, and 6. In the heating process, 180 minutes were needed to achieve a 77% degrees Brix using convective heating, while it took 81, 138, and 166 minutes of microwave heating at power level 10, 7, and 6, respectively to achieve the same concentration. Water activity of the syrup was measured within a sugar content range of 50 to 80% degrees Brix and the sugar concentration at which the product is shelf stable was determined at 76%.  相似文献   
207.
A new ordered structure of the C60 derivative PCBM ([6‐6]‐phenyl C61‐butyric acid methyl ester) is obtained in thin films based on the blend PCBM:regioregular P3HT (poly(3‐hexylthiophene)). Rapid formation of needlelike crystalline PCBM structures of a few micrometers up to 100 μm in size is demonstrated by submitting the blended thin films to an appropriate thermal treatment. These structures can grow out to a 2D network of PCBM needles and, in specific cases, to spectacular PCBM fans. Key parameters to tune the dimensions and spatial distribution of the PCBM needles are blend ratio and annealing conditions. The as‐obtained blended films and crystals are probed using atomic force microscopy, transmission electron microscopy, selected area electron diffraction, optical microscopy, and confocal fluorescence microscopy. Based on the analytical results, the growth mechanism of the PCBM structures within the film is described in terms of diffusion of PCBM towards the PCBM crystals, leaving highly crystalline P3HT behind in the surrounding matrix.  相似文献   
208.
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.  相似文献   
209.
A flat signal gain over in the entire C- and L-bands by erbium (Er) ions' radiative transition and stimulated Raman scattering in an Er-doped germano-silica fiber can be obtained if proper values of the concentration of Er and background loss in a fiber core are obtained during the fiber fabrication process. The optimized conditions for the flat C- and L-band gain are analyzed as functions of Er concentrations. Even for a low-gain value provided by a germano-silica core fiber with a low Er concentration and an optimum fiber length, a relatively low pump is required to obtain the flat gain band.  相似文献   
210.
The drive for cost reduction has led to the use of CMOS technology in the implementation of highly integrated radios. This paper presents a single-chip 5-GHz fully integrated direct conversion transceiver for IEEE 802.11a WLAN systems, manufactured in 0.18-/spl mu/m CMOS. The IC features an innovative system architecture which takes advantage of the computing resources of the digital companion chip in order to eliminate I/Q mismatch and achieve accurately matched baseband filters. The integrated voltage-controlled oscillator and synthesizer achieve an integrated phase noise of less than 0.8/spl deg/ rms. The receiver has an overall noise figure of 5.2 dB and achieves sensitivity of -75 dBm at 54-Mb/s operation, both referred to the IC input. The transmit error vector magnitude is -33 dB at -5-dBm output power from the integrated power-amplifier driver amplifier. The transceiver occupies an area of 18.5 mm/sup 2/.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号