全文获取类型
收费全文 | 371144篇 |
免费 | 5386篇 |
国内免费 | 1550篇 |
专业分类
化学 | 172069篇 |
晶体学 | 4490篇 |
力学 | 13157篇 |
综合类 | 41篇 |
数学 | 36442篇 |
物理学 | 95559篇 |
无线电 | 56322篇 |
出版年
2020年 | 2281篇 |
2019年 | 2202篇 |
2018年 | 2268篇 |
2017年 | 2131篇 |
2016年 | 4324篇 |
2015年 | 3561篇 |
2014年 | 4966篇 |
2013年 | 14970篇 |
2012年 | 11511篇 |
2011年 | 14272篇 |
2010年 | 9230篇 |
2009年 | 9833篇 |
2008年 | 14447篇 |
2007年 | 15146篇 |
2006年 | 14677篇 |
2005年 | 13724篇 |
2004年 | 12417篇 |
2003年 | 11063篇 |
2002年 | 10907篇 |
2001年 | 12344篇 |
2000年 | 9850篇 |
1999年 | 8065篇 |
1998年 | 6867篇 |
1997年 | 6638篇 |
1996年 | 6627篇 |
1995年 | 6195篇 |
1994年 | 5908篇 |
1993年 | 5731篇 |
1992年 | 6135篇 |
1991年 | 6025篇 |
1990年 | 5565篇 |
1989年 | 5187篇 |
1988年 | 5386篇 |
1987年 | 4430篇 |
1986年 | 4303篇 |
1985年 | 5959篇 |
1984年 | 6012篇 |
1983年 | 4953篇 |
1982年 | 5304篇 |
1981年 | 5277篇 |
1980年 | 5026篇 |
1979年 | 5071篇 |
1978年 | 5067篇 |
1977年 | 5036篇 |
1976年 | 4961篇 |
1975年 | 4850篇 |
1974年 | 4712篇 |
1973年 | 4847篇 |
1972年 | 2818篇 |
1971年 | 2124篇 |
排序方式: 共有10000条查询结果,搜索用时 31 毫秒
171.
Hyungtak Kim Thompson R.M. Tilak V. Prunty T.R. Shealy J.R. Eastman L.F. 《Electron Device Letters, IEEE》2003,24(7):421-423
The authors report on the effects of silicon nitride (SiN) surface passivation and high-electric field stress (hot electron stress) on the degradation of undoped AlGaN-GaN power HFETs. Stressed devices demonstrated a decrease in the drain current and maximum transconductance and an increase in the parasitic drain series resistance, gate leakage, and subthreshold current. The unpassivated devices showed more significant degradation than SiN passivated devices. Gate lag phenomenon was observed from unpassivated devices and removed by SiN passivation. However, SiN passivated devices also showed gate lag phenomena after high-electric field stress, which suggests possible changes in surface trap profiles occurred during high-electric field stress test. 相似文献
172.
Kilchytska V. Neve A. Vancaillie L. Levacq D. Adriaensen S. van Meer H. De Meyer K. Raynaud C. Dehan M. Raskin J.-P. Flandre D. 《Electron Devices, IEEE Transactions on》2003,50(3):577-588
This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS). 相似文献
173.
Wavelet-based Rayleigh background removal in MRI 总被引:1,自引:0,他引:1
Rayleigh distribution governs noise in 'no signal' regions of magnetic resonance magnitude images. Large areas of background noise in MRI images will seriously affect their effective utilisation. A new wavelet-based algorithm is presented that can work efficiently either as a standalone procedure or couple with existing denoising algorithms to significantly improve their effectiveness. 相似文献
174.
The paper presents an improved statistical analysis of the least mean fourth (LMF) adaptive algorithm behavior for a stationary Gaussian input. The analysis improves previous results in that higher order moments of the weight error vector are not neglected and that it is not restricted to a specific noise distribution. The analysis is based on the independence theory and assumes reasonably slow learning and a large number of adaptive filter coefficients. A new analytical model is derived, which is able to predict the algorithm behavior accurately, both during transient and in steady-state, for small step sizes and long impulse responses. The new model is valid for any zero-mean symmetric noise density function and for any signal-to-noise ratio (SNR). Computer simulations illustrate the accuracy of the new model in predicting the algorithm behavior in several different situations. 相似文献
175.
Shi-Jin Ding Hang Hu Lim H.F. Kim S.J. Yu X.F. Chunxiang Zhu Li M.F. Byung Jin Cho Chan D.S.H. Rustagi S.C. Yu M.B. Chin A. Dim-Lee Kwong 《Electron Device Letters, IEEE》2003,24(12):730-732
For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications. 相似文献
176.
177.
Jeong-Soo Lee Yang-Kyu Choi Daewon Ha Balasubramanian S. Tsu-Jae King Bokor J. 《Electron Device Letters, IEEE》2003,24(3):186-188
The hydrogen annealing process has been used to improve surface roughness of the Si-fin in CMOS FinFETs for the first time. Hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to annealing. These results suggest that hydrogen annealing is very effective for improving device performance and for attaining a high-quality surface of the etched Si-fin. 相似文献
178.
Hambleton P.J. Ng B.K. Plimmer S.A. David J.P.R. Rees G.J. 《Electron Devices, IEEE Transactions on》2003,50(2):347-351
The nonlocal enhancement in the velocities of charge carriers to ionization is shown to outweigh the opposing effects of dead space, increasing the avalanche speed of short avalanche photodiodes (APDs) over the predictions of a conventional local model which ignores both of these effects. The trends in the measured gain-bandwidth product of two short InAlAs APDs reported in the literature support this result. Relatively large speed benefits are predicted to result from further small reductions in the lengths of short multiplication regions. 相似文献
179.
T. Choi J.‐H. Jang C.K. Ullal M.C. LeMieux V.V. Tsukruk E.L. Thomas 《Advanced functional materials》2006,16(10)
The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern. 相似文献
180.
Oliveira F.D.C. Passos C.A.C. Fardin J.F. Simonetti D.S.L. Passamai J.L. Jr. Belich H. de Medeiros E.F. Orlando M.T.D. Ferreira M.M. Jr. 《Applied Superconductivity, IEEE Transactions on》2006,16(1):15-20
Hg/sub 0.82/Re/sub 0.18/Ba/sub 2/Ca/sub 2/Cu/sub 3/O/sub 8+/spl delta// polycrystalline samples were successfully obtained by using different oxygen partial pressure in the annealing treatment of the precursor ceramic. The doping state was confirmed by X-ray powder diffraction pattern analysis and by observing distinct thermopower values at room temperature. Also, the intergrain regions have shown an improvement in the critical current density when using the precursor preparation with 10% O/sub 2/ and 90% Ar (optimal doped). The optimal doped sample has presented the highest /spl alpha/ exponent of the J/sub c//spl prop/[1-(T/T/sub c/)/sup 2/]/sup /spl alpha// dependence. For the case of (Hg,Re)-1223 polycrystalline superconductor applications, the /spl alpha/ exponent can be used as a junction quality parameter. 相似文献