Crossover from high-temperature vortex-liquid to low-temperature vortex-glass behavior in single phase HgBa2Ca2Cu3O8+δ superconductor

The ρ-T curves in our single phase HgBa₂Ca₂Cu₃O_8+δ superconductor were measured as a function of temperature and magnetic field, ρ=ρ₀exp(−U_eff/κ_BT). It can be transformed to another form d(lnρ)/d(1/T)=−U_eff+TdU_eff/dT, then this becomes a plot of the activation energy U_eff as a function of temperature. Our data plotted in these ways show a clear crossover from high-temperature two-dimensional vortex-liquid to a critical region associated with the low-temperature three-dimensional vortex-glass phase transition. The critical exponents v(z−1)=3.9±1.9 in this system are little different with previous measurements in BSCCO and YBCO systems.     

Single-electron charging spectra: from natural to artificial atoms

We present a theoretical study of the charging spectra in natural and artificial atoms. We apply a model electrostatic potential created by a homogenously charged sphere. This model potential allows for a continuous passage from the Coulomb potential of the nucleus to parabolic confinement potential of quantum dots. We consider electron systems with N=1,…,10 electrons with the use of the Hartree–Fock method. We discuss the qualitative similarities and differences between the chemical potential spectrum of electron systems bound to nucleus and confined in quantum dots.     

Femtochemistry of Guest Molecules Hosted in Colloidal Zeolites

The ultrafast deprotonation of 2‐(2′‐hydroxyphenyl)benzothiazole (HBT) hosted in nanometer‐sized FAU and MFI zeolites is reported. Samples are prepared via in‐situ incorporation of HBT in the precursor colloidal solutions resulting in the formation of nanometer‐sized zeolites under hydrothermal treatment. The diameter of the zeolite particles formed in the crystalline suspensions is determined by dynamic light scattering and high‐resolution transmission microscopy to lie in the range 40–100 nm. It is shown that the HBT loading does not influence the degree of the zeolite crystallinity but does change the size and the morphology of the individual zeolite nanoparticles. Colloidal suspensions containing the crystalline nanoparticles are well suited for optical investigations since they are sufficiently transparent and clear. The photochemical properties of the HBT guest in the zeolite‐host systems are studied with femtosecond transient transmission spectroscopy. Depending on the acid–base properties either the enol or the keto tautomer of HBT is found to be hosted in the internal voids of the zeolites; upon UV excitation, the HBT‐keto tautomer is converted to the enol form in both MFI‐ and FAU‐type hosts. The HBT photoconversion takes place via an ultrafast deprotonation within 1.5 ps as detected by femtosecond transient absorption spectroscopy.     

Reference feedforward in the idle speed control of a direct-injection spark-ignition engine

The direct-injection spark-ignition engine has emerged as a focus of research in improving fuel economy and controlling emissions. This engine can operate in multiple modes, including a stratified charge mode with an air-fuel ratio as large as 50:1. Operating in stratified mode results in improved fuel economy and reduced CO/sub 2/ emissions. The stratified charge mode is employed during low speed and load conditions, such as during engine idle. The idle speed control problem is cast as a two-input-two-output control problem and a baseline feedback controller is developed based on an existing topology from the literature. Significant delays, however, inhibit our ability to improve the transient response via feedback alone. An improved scheme employing reference feedforward is proposed and several potential topologies are presented. A reference feedforward algorithm is derived and nonlinear simulation results are shown in which the system transient responses are improved considerably.     

[110]-surface strained-SOI CMOS devices

We have newly developed [110]-surface strained-silicon-on-insulator (SOI) n- and p-MOSFETs on [110]-surface relaxed-SiGe-on-insulator substrates with the Ge content of 25%, fabricated by applying the Ge condensation technique to SiGe layers grown on [110]-surface SOI wafers. We have demonstrated that the electron and the hole mobility enhancement of [110]-surface strained-SOI devices amounts to 23% and 50%, respectively, against the mobilities of [110]-surface unstrained MOSFETs. As a result, the electron and the hole mobility ratios of [110]-surface strained-SOI MOSFETs to the universal mobility of (100)-surface bulk-MOSFETs increase up to 81% and 203%, respectively. Therefore, the current drive imbalance between n- and p-MOS can be reduced. Moreover, both the electron and the hole mobilities of the [110]-surface strained-SOIs strongly depend on the drain current flow direction, which is qualitatively explained by the anisotropic effective mass characteristics of the carriers on a [110]-surface Si. As a result, the [110]-surface strained-SOI technology with optimization of the current flow directions of n- and p-MOS is promising for realizing higher speed scaled CMOS.     

Digital Sums and Divide-and-Conquer Recurrences: Fourier Expansions and Absolute Convergence

We propose means for computing the Fourier expansions of periodic functions appearing in higher moments of the sum-of-digits function and in the solutions of some divide-and-conquer recurrences. The expansions are shown to be absolutely convergent. We also give a new approach to efficiently compute numerically the coefficients involved to high precision.     

On theL p-bounds for maximal functions associated to convex bodies inR n

The dimension-freeL ²-maximal inequality for convex symmetric bodies obtained in [2] is extended forp>3/2.