A two-echelon base-stock inventory model with Poisson demand and the sequential processing of orders at the upper echelon

We consider a two-echelon inventory system with a number of non-identical, independent ‘retailers’ at the lower echelon and a single ‘supplier’ at the upper echelon. Each retailer experiences Poisson demand and operates a base stock policy with backorders. The supplier manufactures to order and holds no stock. Orders are produced, in first-come first-served sequence, with a fixed production time. The supplier therefore functions as an M/D/1 queue. We are interested in the performance characteristics (average inventory, average backorder level) at each retailer. By finding the distribution of order lead time and hence the distribution of demand during order lead time, we find the steady state inventory and backorder levels based on the assumption that order lead times are independent of demand during order lead time at a retailer. We also propose two alternative approximation procedures based on assumed forms for the order lead time distribution. Finally we provide a derivation of the steady state inventory and backorder levels which will be exact as long as there is no transportation time on orders between the supplier and retailers. A numerical comparison is made between the exact and approximate measures. We conclude by recommending an approach which is intuitive and computationally straightforward.     

On the interpretation of the racemic states of the B 2 phase of banana-shaped mesogens

We show that the racemic states of the B 2 phase of liquid crystals composed of banana-shaped molecules do not satisfy the Curie principle. Thus it is argued that these states cannot exist in bulk samples and the homochiral states constitute the only stable microscopic structures. A reinterpretation of the racemic states with the same macroscopic optical behaviour is proposed in terms of mixtures of the homochiral structures.     

AC hot-carrier effects in MOSFETs with furnaceN2O-nitrided gate oxides

AC hot-carrier effects in n-MOSFETs with thin (~85 Å) N₂O-nitrided gate oxides have been studied and compared with control devices with gate oxides grown in O₂. Results show that furnace N₂O-nitrided oxide devices exhibit significantly reduced AC-stress-induced degradation. In addition, they show weaker dependences of device degradation on applied gate pulse frequency and pulse width. Results suggest that the improved AC-hot-carrier immunity of the N₂O-nitrided oxide device may be due to the significantly suppressed interface state generation and neutral electron trap generation during stressing     

Transmission line analysis of nonlinear slot coupled microstrip antenna

The transmission line method is used for the analysis of microstrip antennas fed by several nonlinear slots with 'H' shapes or new geometries. This analysis allows the input impedance of nonlinear slot coupled microstrip antennas to be calculated for the four different structures.<>     

Surface analysis and surface measuring techniques in firearm offences

Summary When a shot is fired, the projectile and the cartridge case are released from the weapon, as well as components of the priming charge and propellant, the so-called powder-gunshot residues. In order to solve firearm offences, it is therefore very important to determine the topography of trace-bearing areas on the bullet and the cartridge case, as well as the chemical composition of gunshot residue particles. Gunshot residue particles are made visible with the scanning electron microscope (SEM) and are analysed by means of energy-dispersive X-ray spectroscopy (EDXS) and lately also by means of wavelength-dispersive X-ray spectroscopy (WDXS). In addition to this, analyses of these particles are displayed by means of Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS) and depth profiles are prepared. To determine the local distributions of gunshot residue elements with regard to their quantity, the direct Zeeman atomic absorption spectroscopy (DZ-AAS) is employed. Besides the determination of the chemical composition, the topography of the trace-bearing areas on the bullet and cartridge case plays an important part. For the detection of these surfaces, light optical and electron-optical methods are employed. Moreover, the use of opto-electronical testing systems has been attracting more and more attention recently.     

Equilibrium and kinetic surface segregation in binary alloy thin films

A general theoretical analysis of the effect of film thickness on equilibrium and kinetic surface segregation in binary alloy thin films is presented. In this analysis, a constrained condition that represents the finite size of thin film system has been introduced to the modified Darken model, which has been used to describe both equilibrium and kinetic surface segregation in bulk materials. Simulation of surface segregation for alloy thin films can be carried out for all composition ranges and all film thicknesses if only knowing the surface segregation parameters for bulk materials. Simulations of equilibrium and kinetic surface segregation in Cu(1 1 1)Ag binary alloy thin film are presented.     

Electric field-induced birefringence, optical rotatory power and conoscopic measurements of a chiral antiferroelectric smectic liquid crystal

Using a photoelastic modulator-based novel set-up, the electric field-induced in-plane birefringence and the optical rotatory power (ORP) were measured of an antiferroelectric liquid crystalline compound (12OF1M7) in its various phases using 30 µm homeotropic cells. Some specific signatures of the in-plane birefringence and of the ORP for the various phases are being established. A relatively small threshold field is needed for the unwinding process of the antiferroelectric phase with a unit cell of four layers [SmC_A*(1/2)] compared with that for two layers [SmC_A*(0)]. On application of the electric field on the high temperature side of the SmC_A*(1/2) phase (80.1-81.5°C), a field-induced phase transition is shown to occur directly to the SmC* phase, whereas on the lower temperature side (79.4-80.1°C) the transition takes place to SmC* via the SmC_A*(1/3) phase. The in-plane birefringence exhibits a critical power law dependence for the SmC*-SmA transition. The ORP changes sign within the temperature range of the phase with a unit cell of three layers, reflecting a change in the handedness during this phase. Using tilted conoscopy, the results for the biaxiality and the apparent tilt angle for a smectic liquid crystal with a tilt angle greater than 18° in the ferroelectric phase are reported. The biaxiality implies the difference in the refractive indices between the two minor axes of the refractive index ellipsoid. The optical transmittance at visible and IR wavelengths for free-standing films reveal characteristic reflection bands for these phases. The modulated structures of the reflected bands appear just above the SmC_A* phase and below SmC_A*(1/3); these are possibly due to an easy deformation of the phase by the surfaces.     

The preparation and structure of 1,4,5,6,7,7-hexachloro-2-endo-ferrocenylhydroxymethyl-3-endo-hydroxymethyl-5-norbornene

The crystal structure of a novel ferrocene derivative with potential flame-retardant/smoke-suppressant activity, 1,4,5,6,7,7-hexachloro-2-endo-ferrocenyl-hydroxymethyl-3-endo-hydroxymethyl-5-norbornene, has been determined. Some of the carbon–carbon bonds within the chlorendic residue are unusually long, and there is no interaction between the hydroxyl groups and the iron atom. There is evidence of intramolecular hydrogen bonding between the two hydroxyl groups.     

A new mean field SA-SA' critical point in a symmetry breaking field

We consider a S_A-S_A' critical point in the presence of a symmetry-breaking external magnetic (electric) field with a positive magnetic (dielectric) anisotropy or a dislocation layer. Via a renormalization group analysis of the model hamiltonian, we show that the upper critical dimensions below which mean-field theory breaks down is d_c = 2·5. Thus the S_A-S_A' transition in three dimensions becomes mean-field like in the presence of a symmetry-breaking field. We estimate the reduced temperature region where we can expect to see the mean field S_A-S_A' critical point in the presence of a magnetic field or a dislocation layer.