Pr3+-doped 1.3 μm fibre laser using direct coateddichroic mirrors

A 1.3 μm fibre laser consisting of a 1000 ppm (mol) Pr³⁺ -doped fluoride glass fibre with dichroic mirrors coated onto the fibre endfaces and an Nd-YLF pump laser is presented. The output mirror reflectivity R is calculated to be 50% at the lasing wavelength. Producing a maximum output power of 50 mW. The laser threshold and slope efficiency are 300 mW and 8%, respectively. The theoretically predicted values correspond with the experimental values     

Improving the performance of microstrip-patch antennas

This paper describes a cavity-backed patch-antenna geometry, which features multiple dielectric layers and shorting posts. These features are exploited to design antennas which retain many of the desirable characteristics of conventional microstrip antennas, yet overcome some of their inherent disadvantages     

InxGa1−xAs (x=0.25–0.35) grown at low temperature

In_xGa_1−xAs (x=0.25–0.35) grown at low temperature on GaAs by molecular beam epitaxy is characterized by Hall effect, transmission electron microscopy, and ultrafast optical testing. As with low temperature (LT) GaAs, the resistivity is generally higher after a brief anneal at 600°C. High-resolution transmission electron microscopy shows all the as-grown epilayers to be heavily dislocated due to the large lattice mismatch (2–3%). When the layers are annealed, in addition to the dislocations, precipitates are also generally observed. As with LT-GaAs, the lifetime shortens as growth temperature is reduced through the range 300–120°C; also, the lifetime in LT-In_xGa_1−xAs is generally shorter in as-grown samples relative to annealed samples. Metal-semiconductor-metal photodetectors fabricated on the material exhibit response times of 1–2 picoseconds, comparable to results reported on GaAs grown at low temperature, and the fastest ever reported in the wavelength range of 1.0–1.3 μm.     

Performance of the PAC optical packet network

For multiuser packet communications with unpredictable user demands (e.g., in a local or metropolitan area network), coordination and control of access to the frequency-division multiplexing (FDM) channels are difficult. B. Glance (J. Lightwave Technol., vol.10, pp.1323-1328, Sep 1992) proposed using a simple protection-against-collision (PAC) circuit to solve this media access problem and achieve full optical connectivity. The PAC system has the potential to interconnect hundreds of ports, each transmitting at several gigabits per second. Performance aspects of the PAC optical packet network are discussed here. The delay-throughout performance of this network is analyzed for uniform traffic patterns. The results show that in geographically distributed applications the maximum achievable throughput (normalized to the transmission rate) is typically between 0.4 and 0.5 per channel. In a centralized switch the (normalized) maximum achievable throughput can approach 0.8 per channel     

Spatial retardation of carrier heating in scaled 0.1-μmn-MOSFET's using Monte Carlo simulations

A comprehensive Monte Carlo simulator is employed to investigate nonlocal carrier transport in 0.1 μm n-MOSFET's under low-voltage stress. Specifically, the role of electron-electron (e-e) interactions on hot electron injection is explored for two emerging device designs biased at a drain voltage V_d considerably less than the Si/SiO₂ injection barrier height φ_b. Simulation of both devices reveal that 1) although qV_d<φ_b, carriers can obtain energies greater than φ_b, and 2) the peak for electron injection is displaced approximately 20 nm beyond the peak in the parallel channel electric field. These phenomena constitute a spatial retardation of carrier heating that is strongly influenced by e-e interactions near the drain edge. (Virtually no injection is observed in our simulations when e-e scattering is not considered.) Simulations also show that an aggressive design based on larger dopant atoms, steeper doping gradients, and a self-aligned junction counter-doping process produces a higher peak in the channel electric field, a hotter carrier energy distribution, and a greater total electron injection rate into the oxide when compared to a more conventionally-doped design. The impact of spatially retarded carrier heating on hot-electron-induced device degradation is further examined by coupling an interface state distribution obtained from Monte Carlo simulations with a drift-diffusion simulator. Because of retarded carrier heating, the interface states are mainly generated further over the drain region where interface charge produces minimal degradation. Thus, surprisingly, both 0.1 μm n-MOSFET designs exhibit comparable drain current degradation rates     

Oscillation of the scattering time in a 2D electron system with oval antidots

Electron scattering by a single barrier is predicted to reveal singularities as the magnetic field is changed, because the number of electron collisions with the barrier dramatically increases as chaotic orbits around the barrier are changed into periodic orbits. To test this experimentally we have measured the magnetoresistance of AlGaAs/GaAs heterostructures with a two-dimensional electron gas and a lateral lattice containing a macroscopic number of oval-shaped antidots fabricated using electron lithography. Reproducible fluctuations in the magnetoresistance are observed at low field, which are due to the oscillations of the number of electron collisions with the antidots. The number of collisions N before the electron escapes from the antidot has been calculated as a function of B in an electric field. The position of the maxima in N(B) obtained from calculations and experiment are in reasonable agreement.     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

Observation of ionic thermocurrents in zirconia-based solid electrolytes

In ionic conductors, long range-migrating charges are a main cause of polarization processes. This has complicated, up to date, the study of ionic thermocurrents (ITC) in solid electrolytes. However, the method is appealing, as it probes directly charge-formation phenomena that are important both from a scientific point of view and for applications. This work reports on the observation of ITC in solid electrolytes. Under appropriate experimental conditions, the ITC response of a zirconia sample electroded with platinum is a reproducible one, thus opening the way to a new characterization method that may complement other well established methods, such as Impedance Spectroscopy and a number of electrochemical techniques. The general trends of the response, which is composed of two well resolved ITC peaks, is discussed. One of them, taking place at higher temperatures, conforms to the standard shape of a first order kinetics depolarization process. Paper presented at the 2nd Euroconference on Solid State Ionics, Funchal, Madeira, Portugal, Sept. 10–16, 1995     

Inclusive production of neutral vector mesons in hadronic Z decays

A data sample of about 3.0 million hadronicZ decays collected by the ALEPH experiment at LEP in the years 1991 through 1994 is used to make an inclusive selection of B hadron events. In this event sample 4227±140±252B* mesons in the decayB*→Bγ and 1944±108±161B** _u,d mesons decaying into a B meson and a charged pion are reconstructed. Here and in the followingB** _u,d denotes the eightL=1(bū) and (bd) states and their charge conjugate. For the well establishedB* meson the following quantities are obtained:ΔM=M _B*−M_B=(45.30±0.35±0.87) MeV/c² andN _B*/(N _B+N _B*)=(77.1±2.6±7.0)%. The angular distribution of the photons in theB* rest frame is used to measure the relative contribution of longitudinalB* polarization states to beσ _L/(σ _L+σ _T)=(33±6±5)%.