用于VLSI的注入氮化物特性

本文描述了在VLSI研制中通过氮注入形成氮化硅层。在形成各种氮化物层的过程中,注入分子氮能量范围为5到60keV,随后在1000℃的氮中退火。描述在炉中退火前后所形成的氮化物层特性,在不同的IR、SIMS和椭圆对称测量情况中找出局部氧化掩模的有效注入条件。相对于整个注入能量范围,注入氮的最初IR峰值为815cm~(-1)。对于退火后的高能量注入来说该位置会漂移到一个较高的波长数,低能量注入峰值接近于830cm~(-1),上述均与LPCVD为氧化物峰值相比而言。此研究结果认为,低能氧化物的化学成分几乎是可用定量计算的。退火过程中浓度分布向着表面漂移,并将增高峰值区氧的浓度。从氮化物分布剖面看最大值是在表面,而在<10keV时消失。在1000℃的蒸汽中生长5300(?)氧化层进行测试这些氮化物掩模特性。剂量为5×10~(16)N_2~+/cm~(-2)离子的氮化物在注入能量低于40keV会形成有效的氧化掩模。在此实验条件下,在10keV下所形成的氮化层可认为是一个有效的氧化掩模,足以适应选择性地腐蚀SiO_2,减小“鸟嘴”尺寸为常规LOCOS的四分之一。     

关于香港电讯业的问答

本文采用问答的形式，介绍了香港电讯业开放市场，引入竞争的过程，在对电讯市场实行自由化政策进行了评论，并提出向外扩展，引入新的竞争者和加强与内地合作等建议。     

迅速导通的PNP稳压器

通信和压控振荡器电路常常需要　稳压良好的快速通断低噪声电源。带有通／断引脚的线性稳压器非常适用于这种场合，但其输出端会有一些噪声。大幅度提高输出电容可以适度降低噪声。其缺点是增加开支，增大开关通断时间，降低电路效率。ＭＩＣ５２０５是一种低下降ＰＮＰ稳压器。它具有一个噪声旁路引脚，可用来进一步降低噪声。从旁路引脚接到地线的１０ｎＦ电容器，可使输出噪声降低Ｖｏｕｔ／１．２４Ｖ（５Ｖ部件为１２ｄＢ），并形成一个低于１００Ｈｚ的噪声极点。导通时间会从８０ｕｓ增大到１５ｍｓ。再增加少量元器件，下列电路可保…     

Kinetic Studies of Electrochemical Oxidation of 1,3-Benzenedithiol

The electrochemical oxidation of 1, 3-benzenedithiol was investigated in a 0. 100 mol/L tetrabutylammonium perchlorate/acetonitrile electrolyte. The electrochemical techniques used were potential sweep, bulk electrolysis, rotating disc and the potential step method. The combination of the techniques yielded the number of electrons transferred per molecule, the reaction order, the transfer coefficient, the diffusion coefficient and concentration of dithiol anions, the standard heterogeneous rate constant as well as the formal potential and equilibrium constant of the preceeding dissociation reaction. This paper also illustrates the methods for studying the electrode kinetics of reactions which (a) involve a chemical reaction preceeding the electron-transfer process, (b) have insoluble polymer products, and (c) are totally irreversible.     

A Lower Bound for the Differences of Powers of Linear Operators

Let T be a bounded linear operator in a Banach space, with σ（T）={1}. In 1983, Esterle-Berkani＇ s conjecture was proposed for the decay of differences （I - T） T^n as follows： Eitheror lim inf （n→∞（n＋1）｜｜（I-T）T^n｜｜≥1/e or T = I. We prove this claim and discuss some of its consequences.     

广义函数(连载)

<正> §5.数乘一个数λ与一个函数φ(x)的数乘运算λφ(x)有下列性质1°。如果φ_n(x)是基本列,则λφ_n(x)也是基本列。这个性质能使我们把这种运算推广到任意的广义函数f(x)=[φ_n(x)]上,只要假定     

B(0,N)-graded Lie superalgebras coordinatized by quantum tori Dedicated to Professor Sheng GONG on the occasion of his 75th birthday

We use a fermionic extension of the bosonic module to obtain a class of B(0, A)graded Lie superalgebras with nontrivial central extensions.     

New Levels in ^118Pd Observed in the β Decay of Very Neutron-Rich ^118Rh Isotope

We investigate the β decay of very neutron-rich ^118Rh isotope using on-line mass-separated sources which are produced by applying 25 MeV proton induced symmetric fission of natural uranium at the IGISOL facility. The β-γ and γ-γ coincidence spectroscopy is employed to establish the level scheme of daughter nucleus ^118Pd. Five low-lying new levels are identified for the first time with tentative spin and parity assignments based on the even-mass Pd systematics.     

146Ce核的八级形变带和准γ带

通过测量²⁵²Cf自发裂变所产生的瞬发γ射线, 对¹⁴⁶Ce核的高自旋结构进行了重新研究, 结果更新了以前报道的能级纲图, 把八级形变集体带扩展到更高的自旋, 并且重新构建了可能的准γ带结构. 此外, 用反射不对称壳模型(RASM)对¹⁴⁶Ce核的八级形变带进行了计算, 低自旋处的计算结果与实验数据符合得很好.