Structural evolution in amorphous silicon and germanium thin films.

The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method.     

即时通讯软件的安全性分析

在互联网服务中,即时通讯已成为了最流行的服务模式之一,人们对即时通讯的依赖程度也与日俱增。但是, 频频出现的病毒和黑客攻击使广大用户深受其害,即时通讯的安全问题也日益严峻。为了从根本上解决问题,本文对即时通讯软件的架构和协议进行了深入分析,目的是找出漏洞根源,给开发者和使用者提供防止漏洞的依据。     

Broad-band MMICs based on modified loss-compensation method using 0.35-/spl mu/m SiGe BiCMOS technology

Using the concept of loss compensation, novel broad-band monolithic microwave integrated circuits (MMICs), including an amplifier and an analog multiplier/mixer, with LC ladder matching networks in a commercial 0.35-mum SiGe BiCMOS technology are demonstrated for the first time. An HBT two-stage cascade single-stage distributed amplifier (2-CSSDA) using the modified loss-compensation technique is presented. It demonstrates a small-signal gain of better than 15 dB from dc to 28 GHz (gain-bandwidth product=157 GHz) with a low power consumption of 48 mW and a miniature chip size of 0.63 mm² including testing pads. The gain-bandwidth product of the modified loss-compensated CSSDA is improved approximately 68% compared with the conventional attenuation-compensation technique. The wide-band amplifier achieves a high gain-bandwidth product with the lowest power consumption and smallest chip size. The broad-band mixer designed using a Gilbert cell with the modified loss-compensation technique achieves a measured power conversion gain of 19 dB with a 3-dB bandwidth from 0.1 to 23 GHz, which is the highest gain-bandwidth product of operation among previously reported MMIC mixers. As an analog multiplier, the measured sensitivity is better than 3000 V/W from 0.1 to 25 GHz, and the measured low-frequency noise floor and corner frequency can be estimated to be 20 nV/sqrt(Hz) and 1.2 kHz, respectively. The mixer performance represents state-of-the-art result of the MMIC broad-band mixers using commercial silicon-based technologies     

Children's cognitive function and cell-phone electromagnetic fields

Several companies have made major strides in marketing cellular telephones to children within the past 12 months; more and more children are using cell phones as part of their daily routines. Some fear any disturbance to brain activity in children could lead to impaired learning ability or behavioral problems. Moreover, any lasting biochemical effects could have important consequences, especially in the young, who still have years of development ahead of them. Recently, two studies of the mental process of young users of standard 902 MHz Global System for Mobile Communication (GSM) cellular mobile telephones were published: one paper reported a slight trend toward speeding up of simple reaction time, whereas the other study did not detect any change in cognitive functions.     

Silicon-to-steel bonding using rapid thermal annealing

This paper presents the rapid, low-temperature bonding between silicon and steel using the rapid thermal annealing process. Three different thin-film adhesion layer systems including silver, gold, and nickel were utilized as the intermediate bonding material to assist the eutectic Pb/Sn bonding between silicon and steel. The bonding temperature was set at 220/spl deg/C for 20 s, with a 20-s ramp-up time. Five experiments were conducted to determine the strength of the bond, including static tensile and compressive four-point bend tests, axial extension tests, tensile bending fatigue tests, and corrosion resistance tests. The test results have shown that the gold adhesion layer is the most robust, demonstrating minimal creep during fatigue tests, no delamination during the tensile or compressive four-point bend tests, and acceptable strength during the axial extension tests. Additionally, all adhesion layers have withstood four months of submersion in various high-temperature solutions and lubricants without failure. Simulations of the axial stresses and strains that developed during the four-point bend and axial extension tests were performed and showed that the presence of the silicon die provides a local reinforcement of the bond as observed in the experimental tests.     

Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.     

内网安全新时空--宝信网络巡警eCop典型案例分析

内网安全的重要性网络的发展给工作带来巨大便利的同时也带来了众多安全隐患,有关网络信息安全的问题日益突出。目前绝大多数的企业、学校、政府机构把安全重点放在防范来自外部的攻击,依赖于防火墙、防病毒、入侵检测等软件。尽管在所有介绍系统安全的文献中都会提及来自于内部的安全威胁,却鲜有针对内部安全隐患的防范工具与手段。2003年美国CSI/FBI提供的《计算机犯罪与安全调查报告》显示,80%以上的信息安全事件为内部人员和内外勾结所为。尤其近几年来,随着个人技术水平的提高,IP地址非法占用和盗用、非法外联现象、计算机基本信息…     

Design Techniques of CMOS Ultra-Wide-Band Amplifiers for Multistandard Communications

This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology.